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Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com
Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit 1
BASE
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base Voltage VCBO 30 Vdc
2
Emitter−Base Voltage VEBO 5.0 Vdc EMITTER
Collector Current − Continuous IC 200 mAdc
THERMAL CHARACTERISTICS 3
Characteristic Symbol Max Unit
Total Device Dissipation PD 1
FR−5 Board (Note 1) @TA = 25°C 225 W 2
Derate above 25°C 1.8 mW/°C
SOT−23 (TO−236)
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W CASE 318
STYLE 6
Total Device Dissipation Alumina PD
Substrate (Note 2) @TA = 25°C 300 W
Derate above 25°C 2.4 mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
ZC M G
Stresses exceeding Maximum Ratings may damage the device. Maximum
G
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in. ZC = Device Code
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE −
(IC = 2.0 mAdc, VCE = 1.0 Vdc) 120 360
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
Collector−Emitter Saturation Voltage (Note 3) VCE(sat) − 0.3 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT 300 − MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance Cibo − 8.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
10 200
7.0
100 ts
5.0 70
CAPACITANCE (pF)
50 td
TIME (ns)
Cibo
3.0 30 tf tr
20
2.0 Cobo
VCC = 3 V
10.0 IC/IB = 10
7.0 VEB(off) = 0.5 V
1.0 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
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MMBT4124LT1G
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
300 100
hoe , OUTPUT ADMITTANCE ( mhos)
50
200
hfe , CURRENT GAIN
20
100 10
70 5
50
2
30 1
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Figure 6. Output Admittance
20 10
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
7.0
10
hie , INPUT IMPEDANCE (kΩ )
5.0
5.0
3.0
2.0 2.0
1.0
1.0
0.5
0.7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio
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MMBT4124LT1G
STATIC CHARACTERISTICS
2.0
h FE , DC CURRENT GAIN (NORMALIZED)
TJ = +125°C VCE = 1 V
1.0 +25°C
0.7
0.5 -55°C
0.3
0.2
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = 1 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
1.2 1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.0 VBE(sat) @ IC/IB = 10 0.5 +25°C to +125°C
VC for VCE(sat)
V, VOLTAGE (VOLTS)
0.8 0
-55°C to +25°C
VBE @ VCE = 1 V
0.6 -0.5
-55°C to +25°C
0.4 -1.0
VCE(sat) @ IC/IB = 10 +25°C to +125°C
0.2 -1.5 VB for VBE(sat)
0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages Figure 12. Temperature Coefficients
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MMBT4124LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER
SEE VIEW C ANSI Y14.5M, 1982.
3 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
E HE BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
c
1 2 MILLIMETERS INCHES
b DIM MIN NOM MAX MIN NOM MAX
e 0.25 A 0.89 1.00 1.11 0.035 0.040 0.044
A1 0.01 0.06 0.10 0.001 0.002 0.004
q b 0.37 0.44 0.50 0.015 0.018 0.020
c 0.09 0.13 0.18 0.003 0.005 0.007
D 2.80 2.90 3.04 0.110 0.114 0.120
A E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.081
L L 0.10 0.20 0.30 0.004 0.008 0.012
A1 L1 0.35 0.54 0.69 0.014 0.021 0.029
L1 HE 2.10 2.40 2.64 0.083 0.094 0.104
VIEW C STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037
2.0
0.079
0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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