LIST OF SYMBOLS &

ABBREVIATIONS

IC Integrated Circuit
VLSI Very Large Scale Integration
SCT Semi Conductor Technology
SCI Semi Conductor Industry
D/A Digital to Analog Converter
A/D Analog to Digital converter
LV Low Voltage
LP Low Power
ULSI Ultra Large Scale Integration
MOS/MOSFET Metal Oxide Semiconductor Field Effect Transistor
NMOS/N-MOS N type Enhancement MOS
CMOS Complementary MOS, Complementary MOS Inverter
VM Voltage Mode
CM Current Mode
OPAMP Operational Amplifier
CMRR Common Mode Rejection Ratio
BW Band Width
I-V Current versus Voltage
Vout Output Voltage signal
V in Input Voltage signal
A Open Loop Voltage Gain of the OPAMP
β Feedback Factor, Gain of the feedback circuit (CH.1 only)
β Device Conductance of MOS
β Current Gain, in case of CC/CCCII, Gain of current conveyance
α Voltage Gain Coefficient (CC/CCCII)
Constant of proportionality (Eq.3.2)
R Resistance/ Resistor
r Resistance, usually MOS Channel resistance
Ao Open Loop DC Gain of the OPAMP
s Laplace variable
ω Radian Frequency
I Current , signal current
A(s) Gain of Amplifier in s Laplace Domain (Eq.1.6)
K Current Gain of the Current Amplifier (Eq.1.7)
CFOA Current Feedback Operational Ammplifier
CC Current Conveyor
CCII 2nd Generation Current Conveyor
VCVS Voltage Controlled Voltage Source

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VCCS Voltage Controlled Current Source
CCVS Current Controlled Voltage Source
CCCS Current Controlled Current Source
OTA Operational Transconductance Amplifier
GBW Gain Bandwidth
OFC Operational Floating Conveyor
CCCII 2nd Generation Current Controlled Current Conveyor
Z Impedance with suffix
i = input
o = output
x = at node x etc…
Zi, Zo Impedance at Input or Output node
∞ Infinity, A comparatively very large Physical Entity
GAXAsY Gallium Arsenide, X & Y stand for molecular number
SOI Silicon On Insulator
BJT Bipolar Junction Transistor
nm Nanometer
µm (µ: scale) Micrometer
CNT Carbon Nano Tube
CNTFET Carbon Nano Tube based FET
FET Field Effect Transistor
FinFET Multiple Gate FET
VDD Biasing Supply in CMOS Circuits, name by convention
VSS Negative Biasing Voltage, Bias at the Source of a MOS
VTH Threshold Voltage of a MOS, Channel Inversion Voltage
VTP, VTN Threshold Voltage of PMOS and NMOS
VT Thermal equivalent voltage
VGS Gate – Source Drive of a MOS
§ Article Number
SC Switched Capacitor (§1.6.2)
± Positive or Negative
C Capacitance
CS Common Source (Amplifier)
CG Common Gate (Amplifier)
∆ Increment step size of a variable
dt Time increment, a term used in time dependant differentiation and
integration
−1
S VioDD = ro 2 Sensitivity of variable V wrt parameter I
g Conductance, transconductance of a MOS
λ Channel Length Modulation coefficient
po Pole frequency (Eq.2.5) of Transfer Function
zo Zero frequency (Eq.2.6) of Transfer Function
µ Carrier Mobility of MOS Channel
W Channel Width of a MOS
L Channel Length of a MOS
>>,( <<) A quantity comparatively very large (small)
≤ (≥) Less than (Greater than)

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VDsat D – S Voltage of MOS when in saturation
HD Harmonic Distortion Coefficient, Suffix 1, 2, 3 are its order
m Modulation index of channel length (Eq.2.10)
f Frequency variable, constant
f(*) A function of ;
IQ Quiscent Current
IQL, IQU Upper and Lower quiescent current
γ Body effect Coefficient of a MOS
γ Scaling coefficient (Eq.2.16)
≈ Approximately equal or almost same as:
W Watts, a unit of power
Sq cm Square centimeter
1X, 2X… Number of times (2X = double)
LdI/dt Rate of change of Current
k Boltzman Constant
T Absolute Temperature
q One Unit Charge
fT Unity Gain Bandwidth of amplifiers, MOS
E Energy, energy associated with a function
h Plank’s Constant
τ Transit Time in a SC feature
co Speed of light in free space
xj Junction depth
tox Gate oxide thickness
ε Permittivity constant
εox, εSi Permitivity of Silicon Di Oxide or Silicon
td, td_min Switching time, Minimum switching time
CINT Interconnect Capacitance
CoINV Inverter output capacitance
p.u. Per unit
RINT Interconnect Resistance
ν, νSi Speed, Speed of light in Silicon
Zo Characteristic Impedance
η Subthreshold slope factor
Cg Gate capacitance
Cb Body capacitance
S Subthreshold swing, =1/η
ln Logarithm at natural base “e”
Nbulk Dopant concentration in the Silicon bulk
wd Depletion width
ϕ Fermi potential
GIDL Gate Induced Drain Lowering
ITRS International Technology Road Map for Semiconductors
MEMS Micro-electro-mechanical systems
SOC Silicon on sapphire
SIA Semiconductor Industry Association
TFLOP Terra floating point operation

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QSERL Quasi Static Energy Recovery Logic
P Power
Pstatic Static Power, power associated to a circuit when it is idle
Pdynamic Dynamic Power, power associated to a circuit under it’s activity
Pshort_ckt Power associated to a circuit when MOSs (N & PMOS) connect VDD to VSS
briefly
Pleak Leakage power, power associated to condition when it must be ideally zero.
p0→1 Activity index of a digital circuit, probability of a having a 0→1transition
tsc Time period during which VDD remains shorted with VSS
Ipeak Peak value of current
I SUB Subthreshold current leakage
I GATE Gate leakage current
I GIDL Leakage due to GIDL
I REV Reverse bias junction leaksge
θ ja Junction to Ambient thermal resistance
TCHIP On-die junction temperature
T AMBIENT Temperature of the surrounding of the junction
PCHIP Maximum IC power consumption
π A constant of planar and solid angle,
↑↓ An upward/downward trend of the variable under consideration
NBTI Negative Bias Temperature Instability
GFT Product of the Gain and the Transition Frequency
RHS Right Hand Side
LHS Left Hand Side
netlist List of SPICE commands/statements describing circuit
CAPOP Parasitic Capacitance model used by HSPICE
BSIM Berkeley Short-channel IGFET Model
BSIM4 4th major version of BSIM, capable of handling advanced MOSFETs
LEVEL Levels of analysis supported by the HSPICE. Advanced models usually
treated at higher levels,
SPICE Simulation Program with Integrated Circuit Emphasis
HSPICE Advanced version of SPICE for Industry Standard, A GOLD Standard
SPICE, suitable upto 100GHz
CAPMOD A capacitance model card of HSPICE
DIBL Drain induced barrier lowering
ACM Are calculation method
D/S, D–S, d–s Drain and source regions of the MOSFET
Ddiff Diffusion resistance (used by HSPICE for leakage estimation)
Cdiff Diffusion capacitance, (used by HSPICE for leakage estimation)
Isub Leakage to substrate
LX - - - Device parameter cards of HSPICE
igso Gate-to-Source Current
igdo Gate-to-Drain Current
igbo Gate-to-Substrate Current (Igb = Igbacc + Igbinv)

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igcso Source Partition of Igc
igcdo Drain Partition of Igc
iimi Impact ionization current
igidlo Gate-induced drain leakage current
igdt Gate Dielectric Tunneling Current (Ig = Igs + Igd + Igcs + Igcd + Igb)
Igc Gate-to-Channel Current at zero Vds
igbacc Determined by ECB (Electron tunneling from the Conduction Band);
significant in the accumulation
igbinv Determined by EVB (Electron tunneling from the Valence Band);
significant in the inversion
IGISLO Gate-induced source leakage current
COVLGS Gat e-source overlap and fringing capacitances
COVLGB Gate-bulk overlap capacitances
CDO Channel current (IDS)
CBSO DC source-bulk diode current (CBSO)
CBDO DC drain-bulk diode current (CBDO)
QB Total bulk (body) charge (QB)—Meyer and Charge Conservation
CQB Bulk (body) charge current (CQB)—Meyer and Charge Conservation
QG Total Gate charge (QG)—Meyer and Charge Conservation
CQG Gate charge current (CQG)—Meyer and Charge Conservation
QD Channel charge (QD)—Meyer and Charge Conservation
CQD Channel charge current (CQD)—Meyer and Charge Conservation
CGGBO Intrinsic gate capacitance
CGDBO Intrinsic gate-to-drain capacitance
CGSBO Intrinsic gate-to-source capacitance
CBGBO Intrinsic bulk-to-gate capacitance
CBDBO Intrinsic bulk-to-drain capacitance
CBSBO Intrinsic bulk-to-source capacitance
QBD Drain-bulk charge (QBD)
QBS Source-bulk charge (QBS)
CAP_BS Bias dependent bulk-source capacitance
CAP_BD Bias dependent bulk-drain capacitance
CQS Channel-charge current (CQS).
CDGBO Intrinsic drain-to-gate capacitance
CDDBO Intrinsic drain capacitance
CDSBO CDSBO = -dQd/dVs, Drain-to-source capacitance - Meyer and Charge
Conservation
cap_bsz Zero voltage bias bulk-source capacitance
cap_bdz Zero voltage bias bulk-drain capacitance
CGGBM Total gate capacitance (including intrinsic), and all overlap and fringing
components
CGDBM Total gate-to-drain capacitance (including intrinsic), and overlap and
fringing components
CGSBM Total gate-to-source capacitance (including intrinsic), and overlap and
fringing components
CDDBM Total drain capacitance (including intrinsic), overlap and fringing
components, and junction capacitance
CDSBM Total drain-to-source capacitance

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CDGBM Total drain-to-gate capacitance (including intrinsic), and overlap and
fringing components
CBGBM Total bulk-to-gate (floating body-to-gate) capacitance, including intrinsic
and overlap components
CBDBM Total bulk-to-drain capacitance (including intrinsic), and junction
capacitance
cdtot Total capacitance associated with drain
cgtot Total capacitance associated with gate
cstot Total capacitance associated with source
cbtot Total capacitance associated with body or substrate
cgs Total capacitance associated with gate and source
cgd Total capacitance associated with gate and drain
Unit (Area) 1unit=45nmx45nm; WxL/(45nmx45nm)=Device Area in units

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