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Abstract: This work describes the design and Simulation of gain. The realization of high speed and high accuracy op-
high speed, high gain and low power fully differential op-amp amps has proven to be very challenging task. Optimizing
with specifications 110dB DC open loop Gain, Phase margin 72 the circuit design for both requirements leads to conflicting
deg and Unity Gain Bandwidth 822MHz .Input referred noise is demands [1]. A single-stage folded cascode topology is a
about 8nV/Hz@10MHz. Folded-cascode op-amp with positive popular approach in designing high speed op-amps. Besides
slew rate 35V/ns & negative slew rate 28V/ns .The settling time large unity gain frequency, it offers large output swing.
is 3.5ns and the op-amp power consumption 2.8mW with
However, it has limitation to provide high DC gain which is
supply voltage +1.2/-1.2,This design has been implemented in
0.18um UMC mixed signal CMOS Technology using Cadence.
required for high settling accuracy. In 1990, Bult and
The op-amp is designed for sample-and-hold stage of 100mW Geelen proposed the folded cascode op-amp with gain
10-bit, 50MS/s high speed ADC. With speed optimization the boosting technique [3]. This technique help to increase the
0.488% settling time is 3.5ns. This design utilizes Gain-Boosting op-amp DC gain without sacrificing the output swing of a
Technique, which is suitable for low supply voltage applications, regular cascade structure [3]. The pushing up the doublet
has been used to achieve high gain. Common mode feedback can raise stability problem [5], [6]. Based on that, this paper
(CMFB) is used to stable the designed op-amp against presents a simple but robust optimization design method; a
temperature. Three fully differential folded cascode op-amps sample fully differential gain-boosted folded-cascode op
have been used in this designing, one for main op-amp and amp was also designed in 0.18um mix-signal CMOS
others for gain-boosting techniques. The two fully differential process with 1.2V power supply. Purpose of this paper is to
folded-cascode. Op-Amp have continuous time with CMFB
discuss design consideration when utilizing gain boost
which is used as Gain-Boosting techniques to increase the open
cascade op-amp in the sample-and-hold (SHA) stage of
loop gain of the main Gain-Boosting. A slew rate enhancement
circuit is introduced for improving the non symmetric slew rate 100mW 10-bit 50Ms/s Pipeline A/D converter. This paper is
of the output stages. divided into three additional sections. The gain boosting
technique is explained in section 4. And the circuit
Keywords: Gain-Boosting, slew rate enhancement, CMFB. frequency behavior is analyzed in section 5. In section 2, the
circuit implementation with 0.18um CMOS Process is
1. Introduction presented. The simulation results are given and discussed in
section 6. Finally, the conclusions are drawn in section 7.
In high performance analog integrated circuits, such as
switch-capacitor filters, delta-sigma modulators and pipeline 2. Design of Gain Boosted Folded Cascode Op-
A/D converters, op amps with very high dc gain and high
Amp
unity-gain frequency are needed to meet both accuracy and
In this section, the implementations of the main op-amp and
fast settling requirements of the systems. In application of
the gain enhancement stages are discussed. A general
pipelined analog-to-digital (A/D) converters, the
method of designing a pipeline A/D converter for minimum
requirement for high speed and high accuracy operational
power consumption was performed at the system level. This
amplifiers (op-amps) are essential. The speed and accuracy
results in a set of specifications for each stage in pipelined
criteria are determined by the settling behavior of the op-
A/D converter. The selected system architecture has a SHA
amps. Fast settling mainly depends on the unity gain
stage followed by eight 1.5bit residue gain stages and a 2-bit
frequency while high settling accuracy is due to high DC
flash stage. The op-amp has to meet the specifications for
(IJCNS) International Journal of Computer and Network Security, 91
Vol. 2, No. 8, August 2010
the SHA as shown in Table 1. Since regular cascode device parameters related to channel length modulation
can not meet these specifications, gain boost cascode respectively for NMOS and PMOS devices. Taking the
topology has been chosen to meet both the high gain and complementarily between the transistors M4 and M6 into
high bandwidth requirements. Fully differential folded- account:
cascode op-amps have been adopted in this design, one for The gain expression becomes:
main op amp, and the others for auxiliary op amps. The
complete implementation is shown in Figure.2.Because the
gain-boosted op amp will be used in a closed-loop The unity gain frequency of the OTA is given by the
configuration, in order to minimize the virtual ground expression:
parasitic that reduces feedback factor, a NMOS differential Table 2: Design parameters and specifications
pair is chosen as input stage in the main op-amp. As for the Specifications Values
two auxiliary op amps, there is not any difference except f(MHz) 340
their input stages. The auxiliary op amp A2 is shown in ID(μA) 30
Figure.3 and Al is not shown again for its similarity to A2. Channel length(μm) 0.18
The ideal effect of the auxiliary op amp is to increase the AV(dB) 82
output impedance of the main op amp by auxiliary times so
CL(Pf) 0.1
as to improve the dc gain of the main op amp by the same
Vdd +1.2/-1.2
times. At the same time, the dominant pole of the main op
amp is pushed down by auxiliary times, where auxiliary is Parameters Values
the dc gain of the auxiliary op amp. As long as the unit-gain gm9,10/ID(V-1) 8
bandwidth of the auxiliary op amp is designed to be larger ID(W/L)9,10(μA) 0.86
than the -3dB bandwidth of the main op-amp the high- g,m4/ID(V-1) 6
frequency performance of the main op amp will be ID(W/L)4(μA) 1.65
unchanged, i.e. the gain-boosted op amp has the same high- W9,10(μm) 35
frequency performance as that of the main op amp. In fact, W1,2,3,4(μm) 18
the gain-boosting technique can potentially raise two W5,6,7,8,11,12(μm) 6
significant problems for the time-domain performance of the
gain-boosted op amp, i.e. doublet and instability.
4. Gain Boosting Technique
Table 1: Op-amp specification for SHA stage Figure 1 illustrates a gain boost cascade topology where
Parameters Specifications transistor MI is an input device, M2 a cascode device and
Stage capacitor(Cf) 1.2Pf
M3 a gain boost device. M3 drives the gates of M2 and
Load capacitor 1.9Pf forces the voltage at nodes X and Y to be equal. As a result,
Feedback factor 0.9 voltage variations at the drain of M2 will affect the voltage
Settling time 3.5ns at node X to a lesser extent because the gain boost device
DC gain 72dB regulates this voltage [3]. Figure. 1 Gain Boost cascode
Gain bandwidth(GBW) 326MHz topology The addition of gain boost device with open loop
Phase margin(PM) 70degree gain, Afb, provides a small signal output resistance
Input transistor current 0.72mA approximately Afb times larger than that of a regular
cascode [4]. Through this technique, the output resistance
3. Optimum Technology OTA Architecture and gain can be increased by the gain of the gain boost
Several fundamental issues exist when selecting an optimal device without adding more cascade devices. However,
architecture for the operational transconductance amplifier. transient response from such an op-amp is degraded by the
This choice aimed both at large gain and large bandwidth presence of pole-zero
performances. The folded cascode OTA is shown in Figure.
3 [2 - 4]. The name “folded cascode” comes from folding
down n-channel cascode active loads of a diff-pair and
changing the MOSFETS to p-channels. This OTA, like all
OTAs, has good PSRR compared to the operational
amplifier. To understand the operation of the folded cascode
OTA, this last has a differential stage consisting of PMOS
transistors M9 and M10 intend to charge Wilson mirror.
MOSFETS M11 and M12 Provide the DC bias voltages to
M5- M6-M7-M8 transistors. The open-loop voltage gain is
given by:
Figure 1. Gain boosting cascode topology
Where gm9, gm4 and gm6 are respectively the
transconductances of transistors M9, M4 and M6. ID is the doublet [5]. This doublet appears as a slow exponential term
bias current flowing in MOSFETS M4, M6, and M9. Like, in the step response of the op-amp, thus degrading the total
CL is the capacitance at the output node. λN and λP are the settling time drastically and will discussed further in the
analysis section.
92 (IJCNS) International Journal of Computer and Network Security,
Vol. 2, No. 8, August 2010
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