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S
N-Channel MOSFET
ORDERING INFORMATION
Part Number Package
GPT13N50GN220* TO-220
GPT13N50DGN220FP* TO-220F
*Note: G : Suffix for PB Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
GPT13N50
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS 500 V
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current IDSS 1 µA
(VDS = 500 V, VGS = 0 V)
Gate-Source Leakage Current-Forward IGSSF 100 nA
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse IGSSR 100 nA
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage VGS(th) 3 5 V
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 6.5A) * RDS(on) 0.49 Ω
Forward Transconductance (VDS = 15 V, ID = 6.5A) * gFS 8.7 S
Input Capacitance Ciss 1578 pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance Coss 180 pF
f = 1.0 MHz)
Reverse Transfer Capacitance Crss 9.8 pF
Turn-On Delay Time td(on) 33 ns
Rise Time (VDD = 250 V, ID = 13 A, tr 59 ns
Turn-Off Delay Time RG = 25Ω) * td(off) 75 ns
Fall Time tf 34.8 ns
Total Gate Charge Qg 31 nC
(VDS = 400 V, ID = 13 A,
Gate-Source Charge Qgs 8.7 nC
VGS = 10 V)*
Gate-Drain Charge Qgd 12 nC
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1) VSD 1.5 V
(IS =13 A, VGS = 0 V,
Forward Turn-On Time ton ** ns
dIS/dt = 100A/µs)
Reverse Recovery Time trr 450 ns
3.2
1.2
2.8
2.4
Rdson (Norm alized)
1.6
1
1.2
0.8
0.4
0
0.8
-50 -40 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150
Operation Temperature (C) Operation Temperature (C)
Fig 1. On-Resistance Variation with vs. Fig.2 Breakdown Voltage Variation vs.
Temperature Temperature
100
10V
8V
6.5V
5.5V
25C
ID , D rain -to -So u rce cu rren t [A ]
5V
10
1 150C
TO-220F
IMPORTANT NOTICE
Great Power Microelectronic Corporation (GP) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. GP integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of GP products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
虹冠電子工業股份有限公司 深圳市冠顺微电子股份有限公司
Champion Microelectronic Corporation Shenzhen Great Power Co.,Ltd
Web:http://www.champion-micro.com/ Web:http:// www.grtpower.com
臺灣 深圳
深圳市福田区深南大道 7002 号财富广场 A 座 4V,
新北市汐止區新台五路一段 96 號 21F
21F., No. 96, Sec. 1, Sintai 5th Rd., 4V, Tower A, Fortune Plaza, No. 7002, Shennan
Sijhih City, Taipei County 22102, Road, Futian District, Shenzhen City, China
Taiwan, R.O.C. PC : 518040
T E L : +886-2-2696 3558 T E L : +86-755-83709176
F A X : +886-2-2696 3559 F A X : +86-755-83709276