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D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601
15 10
10V
3V
12 8 VDS=5V
4.5V
9 6
ID (A)
ID(A)
2.5V
6 4
125°C
3 2
VGS=2V
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
150 1.8
125
Normalized On-Resistance
1.4 VGS=10V
75
VGS=4.5V
50 1.2 VGS=2.5V
25 VGS=10V 1
0
0 2 4 6 8 10 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
200 1.0E+01
1.0E+00
150 ID=2A
1.0E-01
125°C
RDS(ON) (mΩ)
1.0E-02
IS (A)
100
125°C 1.0E-03
25°C
1.0E-04
50
25°C
1.0E-05
0 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
5 600
VDS=15V
ID=4A 500
4
Ciss
Capacitance (pF)
400
VGS (Volts)
3
300
2
200
1 Coss Crss
100
0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150°C
20
TA=25°C TJ(Max)=150°C
TA=25°C
15
10.0 RDS(ON) 10µs
100µs
ID (Amps)
limited
Power (W)
1ms
10ms 10
1.0
1s 0.1
10s 5
DC
0.1
0
0.1 1 10 100
VDS (Volts) 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
AO4601
50 25
-10V -8V -6V
VDS=-5V
-5.5V
40 20
-5V
30 15
-ID (A)
-ID(A)
20 -4.5V 10
125°C
10 VGS=-4V 5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
30 1.4
ID=-8A
25 VGS=-6V 1.3
Normalized On-Resistance
VGS=-10V
20
1.2
RDS(ON) (mΩ)
15
VGS=-10V 1.1 VGS=-4.5V
10
1
5
0.9
0
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
60 1.0E+01
50 1.0E+00
ID=-8A
1.0E-01
40 125°C
RDS(ON) (mΩ)
1.0E-02
-IS (A)
30 125°C
1.0E-03
20
25°C 1.0E-04
25°C
10 1.0E-05
0 1.0E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 3000
VDS=-15V
ID=-8A 2500
8 Ciss
Capacitance (pF)
2000
-VGS (Volts)
6
1500
4 Coss
1000
Crss
2
500
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 10µs TA=25°C
100µs
RDS(ON) 1ms 30
10.0 limited
Power (W)
-ID (Amps)
10ms
20
0.1s
1.0
1s
10
10s
DC
0
0.1
0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance