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This device is particularly suited for compact power Control MOSFET (Q1) includes Zener protection for ESD
management in portable electronic equipment where ruggedness (>6KV Human Body Model).
2.5V to 8V input and 2.5A output current capability are High performance trench technology for extremely low
needed. This load switch integrates a small N-Channel on-resistance.
power MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6 SuperSOTTM-6 package design using copper lead frame for
package. superior thermal and electrical capabilities.
EQUIVALENT CIRCUIT
V IN , R1 4 3 VOUT , C1
9
.32
V DROP
Q2 + -
IN OUT
VON/OFF 5 2 VOUT , C1
Q1 O N / O FF
R1 , C1 6 1 R2
pin 1
TM
SuperSOT -6 See Application Circuit
1. Range of Vin can be up to 8V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -8V.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
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Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
0.2 0.2
V IN = 5V
VON/OFF = 1.5 - 8V
PW =300us, D≤ 2% TJ = 125°C
0.15 0.15
TJ = 125°C T = 25°C
VDROP , (V)
J
VDROP ,(V)
0.1 0.1
T = 25°C
J
0.05 0.05
V IN = 2.5V
VON/OFF = 1.5 - 8V
PW =300us, D≤ 2%
0 0
0 0.6 1.2 1.8 2.4 3 0 0.6 1.2 1.8 2.4 3
I L , (A) I L , (A)
0.2
I L = 1A
VON/OFF = 1.5 - 8V
0.16 PW =300us, D≤ 2%
R (ON) ,(Ohm)
0.12
T = 125°C
0.08 J
0.04 25°C
0
1 2 3 4 5
VIN , (V)
1
TRANSIENT THERMAL RESISTANCE
0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.05 P(pk)
0.05
0.02 t1
0.02 t2
0.01
TJ - TA = P * R θJA(t)
0.01
Single Pulse Duty Cycle, D = t 1/ t 2
0.005
0.00001 0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)
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3
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