PM45502C

Silicon N-Channel Power MOS FET Module

November 1996

Application
High Speed Power Switching

Features
• Equipped with Power MOS FET
• Low on-resistance
• High speed switching
• Low drive current
• Wide area of safe operation
• Inherent parallel diode between source and drain
• Isolated base from Terminal
• Suitable for motor driver, switching regulator and etc.
PM45502C

Outline

LF-C Equivalent Circuit

D2
D2
S2
D1 Rg
S1 G2

S2 S2
G1
S1 D1
S2 G2 Rg
G1

No Electrode Terminals Remarks S1 S1

S1 Source 1 M5 screw Power terminal
D1 Drain 1 M5 screw
S2 Source 2 M5 screw
D2 Drain 2 M5 screw
G1 Gate 1 #110 Signal terminals
S1 Source 1 #110
G2 Gate 2 #110
S2 Source 2 #110

Absolute Maximum Ratings (Ta = 25°C) (Per FET chip)

Item Symbol Rating Unit
Drain source voltage VDSS 450 V
Gate source voltage VGSS ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Body to drain diode reverse drain current IDR 50 A
Body to drain diode reverse drain peak current IDR(peak) 100 A
1
Channel dissipation Pch* 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +125 °C
2
Insulation dielectric Visol* 2000 V
Notes 1. Value at Tc = 25°C
2. Base to terminals AC minute

2
 PM45502C

Electrical Characteristics (Ta = 25°C) (Per FET chip)

Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS 450 — — V ID = 10 mA, VGS = 0
voltage
Gate to source leak current IGSS — — ±50 µA VGS = ±16 V, VDS = 0
Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
voltage
Zero gate voltage drain current IDSS — — 1 mA VDS = 360 V, VGS = 0
Gate to source threshold VGS(th) 1.5 — 4.0 V ID = 1 mA, VDS = 10 V
voltage
1
Drain to source saturation VDS(on) — 2.0 3.0 V ID = 25 A, VGS = 10 V*
voltage
Ω
1
Static Drain to source on state RDS(on) — 0.08 0.12 ID = 25 A, VGS = 10 V*
resistance
1
Forward transfer admittance |yfs| 25 40 — S ID = 25 A, VDS = 10 V*
Input capacitance Ciss — 10250 — pF VDS = 10 V, VGS = 0
Output capacitance Coss — 3600 — pF f = 1 MHz
Reverse transfer capacitance Crss — 400 — pF
Turn-on delay time td(on) — 150 — ns ID = 25 A, VGS = 10 V
Rise time tr — 700 — ns RL = 1.2 Ω
Turn-off delay time td(off) — 800 — ns
Fall time tf — 600 — ns
Body to drain diode forward VDF — 1.2 — V IF = 25 A, VGS = 0
voltage
Body to drain diode reverse trr — 200 — ns IF = 25 A, VGS = 0
recovery time diF/dt = 100 A/µs
Note 1. Pulse Test

Mechanical Characteristics
Item Symbol Condition Rating Unit
Fixing strength — Mounting into main-terminal with M5 screw 15 to 20 kg•cm
— Mounting into heat sink with M6 screw 20 to 30 kg•cm
Weight — Typical value 300 g

3
PM45502C

Power vs. Temperature Derating

600

Channel Dissipation Pch (W)

400

200

0 50 100 150
Case Temperature TC (°C)

Maximum Safe Operation Area

100 10 10
PW
µs µs
D 0
C =
O 10 1
30 pe m m
ra s s
(1
Drain Current ID (A)

tio
n Sh
10 (T ot
C = )
25
°C
3 Operation in this area )
is limited by RDS (on)
1.0

Ta = 25°C
0.3 PM45502C
PM50502C
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)

Typical Output Characteristics

100
10 V
7.0 V
Pulse Test
80 6.0 V
Drain Current ID (A)

5.5 V

60

40 5.0 V

20 4.5 V
VGS = 4.0 V

0 10 20 30 40 50
Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

100

–25°C Ta = 25°C
80 75°C
Drain Current ID (A)

VDS = 20 V
Pulse Test
60

40

20

0 2 4 6 8 10
Gate to Source Voltage VGS (V)

4
 PM45502C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage

Drain to Source Saturation Voltage VDS (on) (V)

10
Pulse Test

8
75 A

50 A
4

ID = 25 A
2

0 4 8 12 16 20
Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Drain Current
Static Drain to Source on State Resistance

0.5

Pulse Test VGS = 10 V

0.2

0.1
RDS (on) (Ω)

15 V
0.05

0.02

0.01

0.005
2 5 10 20 50 100 200
Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Temperature
Static Drain to Source on State Resistance

0.20
VGS = 10 V
Pulse Test 75 A
0.16 50 A
RDS (on) (Ω)

0.12
ID = 25 A

0.08

0.04

0
–40 0 40 80 120 160
Case Temperature TC (°C)

5
PM45502C
Forward Transfer Admittance
vs. Drain Current
50

Forward Transfer Admittance yfs (S)

–25°C
VDS = 10 V
Pulse Test 75°C
20

Ta = 25°C
10

1.0

0.5
0.5 1.0 2 5 10 20 50
Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time
1,000
di/dt = 100 A/µs, VGS = 0
Reverse Recovery Time trr (ns)

500 Ta = 25°C
Pulse Test

200

100

50

20

10
0.5 1.0 2 5 10 20 50
Reverse Drain Current IDR (A)

Typical Capacitance vs.

Drain to Source Voltage
50
VGS = 0
f = 1 MHz
Ciss
10
Capacitance C (nF)

Coss
1

0.1 Crss
0.05
0 10 20 30 40 50
Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

500 20
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

VDD = 100 V
400 VDS 16
250 V
400 V
300 12
VGS

200 8

100 VDD = 400 V 4

250 V ID = 50 A
100 V
0
0 100 200 300 400 500
Gate Charge Qg (nc)

6
 PM45502C
Switching Characteristics
5,000
VGS = 10 V
PW = 10 µs, duty < 1%
2,000

Switching Time t (ns)

td (off)
1,000

500 tf

tr
200 td (on)

100

50
1 2 5 10 20 50 100
Drain Current ID (A)

Reverse Drain Current vs.

Source to Drain Voltage
100
Reverse Drain Current IDR (A)

Pulse Test
80

60

40

20 5 V, 10 V
VGS = 0, –10 V

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

7
PM45502C

Normalized Transient Thermal Impedance γS (t)

Normalized Transient Thermal Impedance vs. Pulse Width
3

TC = 25°C
D=1
1.0
0.5

0.3 0.2
0.1 θch–c (t) = γS (t) · θch–c
0.1 θch–c = 0.416°C/W, TC = 25°C
0.05 PDM
0.02
0.03 D = PW
0.01 PW T
T
1 Shot Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (s)

Switching Time Test Circuit

Vin Monitor
Vout Monitor

D.U.T
RL

50 Ω VDD
Vin .
=. 30 V
10 V

Waveforms

90%

Vin 10%

Vout 10% 10%

90% 90%
td (on) tr td (off) tf

8
 PM45502C

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1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

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Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109

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