PSMN4R4-80PS

N-channel 80 V, 4.1 mΩ standard level FET

Rev. 01 — 18 June 2009 Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ Low conduction losses due to low „ Suitable for standard level gate drive
on-state resistance sources

1.3 Applications
„ DC - DC converters „ Motor control
„ Load switch „ Server power supplies

1.4 Quick reference data

Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
ID drain current Tmb = 25 °C; VGS = 10 V; - - 100 A
see Figure 1; see Figure 3
Ptot total power Tmb = 25 °C; see Figure 2 - - 306 W
dissipation
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 80 A; - 25 - nC
VDS = 40 V; see Figure 14;
see Figure 15
Static characteristics
RDSon drain-source VGS = 10 V; ID = 15 A; [1] - 3.3 4.1 mΩ
on-state resistance Tj = 25 °C; see Figure 6;
see Figure 13

[1] Measured 3 mm from package.

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D drain
mbb076 S

1 2 3

SOT78
(TO-220AB; SC-46)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PSMN4R4-80PS TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46 TO-220AB

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 2 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 80 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1; - 100 A
see Figure 3
VGS = 10 V; Tmb = 25 °C; see Figure 1; - 100 A
see Figure 3
IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 - 680 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 306 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 100 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 680 A
Avalanche ruggedness
EDS(AL)S non-repetitive VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 80 V; - 591 mJ
drain-source avalanche RGS = 50 Ω; unclamped
energy

003aad091 03aa16
200 120
ID
(A)
Pder
(%)
150
80

100
(1)

40
50

0 0
0 50 100 150 200 0 50 100 150 200
Tmb ( C) Tmb (°C)

Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a
function of mounting base temperature function of mounting base temperature

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 3 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

003aad317
103
10 μs
ID Limit RDSon = VDS / ID
(A)

102
100 μs
(1)

10
DC

1 ms
10 ms
1
100 ms

10-1
10-1 1 10 102 VDS (V) 103

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain source voltage

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from see Figure 4 - 0.23 0.49 K/W
junction to mounting
base

003aad100
1

Zth (j-mb)
(K/W)

10-1 δ = 0.5
0.2
0.1

10-2 0.05
0.02
tp
P δ=
T
10-3

single shot
tp t
T
10-4
10-6 10-5 10-4 10-3 10-2 10-1 1 10
tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 4 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
voltage see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.6 V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
see Figure 11; see Figure 12
IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - - 10 µA
VDS = 80 V; VGS = 0 V; Tj = 125 °C - - 200 µA
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 175 °C; [2] - 7.6 9.47 mΩ
resistance see Figure 13
VGS = 10 V; ID = 15 A; Tj = 100 °C; - 5.5 6.8 mΩ
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C; [2] - 3.3 4.1 mΩ
see Figure 6; see Figure 13
RG internal gate resistance f = 1 MHz - 1 - Ω
(AC)
Dynamic characteristics
QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 112 - nC
ID = 80 A; VDS = 40 V; VGS = 10 V; - 125 - nC
see Figure 14; see Figure 15
QGS gate-source charge ID = 80 A; VDS = 40 V; VGS = 10 V; - 39 - nC
QGS(th) pre-threshold see Figure 14; see Figure 15 - 24 - nC
gate-source charge
QGS(th-pl) post-threshold - 15 - nC
gate-source charge
QGD gate-drain charge - 25 - nC
VGS(pl) gate-source plateau ID = 25 A; VDS = 40 V; see Figure 14; - 4.65 - V
voltage see Figure 15
Ciss input capacitance VDS = 40 V; VGS = 0 V; f = 1 MHz; - 8400 - pF
Coss output capacitance Tj = 25 °C; see Figure 16 - 700 - pF
Crss reverse transfer - 336 - pF
capacitance
td(on) turn-on delay time VDS = 40 V; RL = 0.5 Ω; VGS = 10 V; - 34.7 - ns
tr rise time RG(ext) = 1.5 Ω - 38.1 - ns
td(off) turn-off delay time - 66 - ns
tf fall time - 18.4 - ns

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 5 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.8 1.2 V
see Figure 17
trr reverse recovery time IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V; - 59 - ns
Qr recovered charge VDS = 20 V - 130 - nC

[1] Tested to JEDEC standards where applicable.

[2] Measured 3 mm from package.

003aad101 003aad103
300 8
ID VGS (V) = 20 10 8 6 RDSon VGS (V) = 5 5.5
(A) (mΩ)
5.5
250
7

200
6

150
5 6
5
100
8
4 10
50 20
4.5

0 3
0 0.75 1.5 2.25 3 0 75 150 225 300
VDS (V) ID (A)

Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of drain current; typical values

003aad102 003aad106
250 12000
ID Ciss
(A) C
200 (pf)

8000
150 Crss

175 °C
100
4000

25 °C
50

0 0
0 2 4 6 10-1 1 10 102
VGS (V) VGS (V)

Fig 7. Transfer characteristics: drain current as a Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values function of gate-source voltage; typical values
PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 6 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

003aad109 003aad110
250 25
gfs RDSon
(S) (mΩ)
200 20

150 15

100 10

50 5

0 0
0 50 100 150 200 0 5 10 15 20
ID (A) VGS (V)

Fig 9. Forward transconductance as a function of Fig 10. Drain-source on-state resistance as a function
drain current; typical values of gate-source voltage; typical values

003aad280 03aa35
5 10−1
VGS(th) ID
(V) (A)
min typ max
4 10−2
max

3 10−3
typ

2 min 10−4

1 10−5

0 10−6
−60 0 60 120 180 0 2 4 6
Tj (°C) VGS (V)

Fig 11. Gate-source threshold voltage as a function of Fig 12. Sub-threshold drain current as a function of
junction temperature gate-source voltage

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 7 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

003aad327
2.5
VDS
a
2 ID

VGS(pl)
1.5
VGS(th)

1 VGS
QGS1 QGS2

QGS QGD
0.5
QG(tot)

003aaa508
0
-60 0 60 120 180 Fig 14. Gate charge waveform definitions
Tj (°C)

Fig 13. Normailzed drain-source on-state resistance

factor as a function of junction temperature

003aad105 003aad104
10 10000
VGS C
(V) (pF) Ciss
VDS = 20 V
7.5 7500
VDS = 40 V

5 5000

2.5 2500

Coss
Crss
0 0
0 35 70 105 140 10-1 1 10 102
QG (nC) VDS (V)

Fig 15. Gate-source voltage as a function of gate Fig 16. Input, output and reverse transfer capacitances
charge; typical values as a function of drain-source voltage; typical
values

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 8 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

003aad107
100
IS
(A)

75

50

175 °C

25

Tj = 25 °C

0
0 0.25 0.5 0.75 1
VSD (V)

Fig 17. Source current as a function of source-drain voltage; typical values

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 9 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2(1)

Q
b1(2)
L (3×)

b2(2)
(2×)
1 2 3

b(3×) c

e e

0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13

Fig 18. Package outline SOT78 (TO-220AB)

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 10 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PSMN4R4-80PS_1 20090618 Product data sheet - -

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 11 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

9. Legal information

9.1 Data sheet status

Document status [1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PSMN4R4-80PS_1 © Nexperia B.V. 2017. All rights reserved

Product data sheet Rev. 01 — 18 June 2009 12 of 13

Nexperia PSMN4R4-80PS
N-channel 80 V, 4.1 mΩ standard level FET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10 Contact information. . . . . . . . . . . . . . . . . . . . . .12

© Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 18 June 2009