SEMICONDUCTOR KTN2222S/AS

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Low Leakage Current A _ 0.20
2.93 +
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. B 1.30+0.20/-0.15
C 1.30 MAX

D
Low Saturation Voltage 2 3 0.45+0.15/-0.05
D

G
E 2.40+0.30/-0.20
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

H
1 G 1.90
H 0.95
Complementary to the KTN2907S/2907AS. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10

N
C
P 7

J
M

K
MAXIMUM RATING (Ta=25 )
1. EMITTER
RATING 2. BASE
CHARACTERISTIC SYMBOL UNIT 3. COLLECTOR
KTN2222S KTN2222AS
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V SOT-23
Emitter-Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Collector Power Dissipation
PC 350 mW
(Ta=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm.

Marking
Type Name Lot No. Lot No.

ZB Type Name
ZG

MARK SPEC
TYPE MARK
KTN2222S Z B
KTN2222AS Z G

1999. 5. 4 Revision No : 2 1/5

 KTN2222S/AS

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222AS ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KTN2222S VCB=50V, IE=0 - - 0.01
Collector Cut-off Current ICBO A
KTN2222AS VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222AS IEBO VEB=3V, IC=0 - - 10 nA

Collector-Base KTN2222S 60 - -
V(BR)CBO IC=10 A, IE=0 V
Breakdown Voltage KTN2222AS 75 - -

Collector-Emitter * KTN2222S 30 - -
V(BR)CEO IE=10mA, IB=0
Breakdown Voltage KTN2222AS V
40 - -

Emitter-Base KTN2222S 5 - -
V(BR)EBO IE=10 A, IC=0
Breakdown Voltage KTN2222AS 6 - - V

hFE(1) IC=0.1mA, VCE=10V 35 - -

KTN2222S hFE(2) IC=1mA, VCE=10V 50 - -

KTN2222AS hFE(3) IC=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222S 30 - -
hFE(5) IC=500mA, VCE=10V
KTN2222AS 40 - -
KTN2222S - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KTN2222AS - - 0.3
V
Saturation Voltage KTN2222S - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KTN2222AS - - 1
KTN2222S - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KTN2222AS 0.6 - 1.2
V
Saturation Voltage KTN2222S - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KTN2222AS - - 2.0
KTN2222S VCE=20V, IC=20mA, 250 - -
Transition Frequency fT MHz
KTN2222AS f=100MHz 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
KTN2222S - - 30
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz pF
KTN2222AS - - 25
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

1999. 5. 4 Revision No : 2 2/5

 KTN2222S/AS

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IC=1mA, VCE=10V, f=1kHz 2 - 8
Input Impedance KTN2222AS hie k
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
IC=1mA, VCE=10V, f=1kHz - - 8
Voltage Feedback Ratio KTN2222AS hre x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
IC=1mA, VCE=10V, f=1kHz 50 - 300
Small-Singal Current Gain KTN2222AS hfe
IC=10mA, VCE=10V, f=1kHz 75 - 375
IC=1mA, VCE=10V, f=1kHz 5 - 35
Collector Output Admittance KTN2222AS hoe
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222AS Cc rbb’ IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
IC=100 A, VCE=10V,
Noise Figure KTN2222AS NF - - 4 dB
Rg=1k , f=1kHz
Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10
Rise Time tr IC=150mA, IB1=15mA - - 25
Switching Time nS
Storage Time tstg VCC=30V, IC=150mA - - 225
Fall Time tf IB1=-IB2=15mA - - 60

1999. 5. 4 Revision No : 2 3/5

 KTN2222S/AS

1999. 5. 4 Revision No : 2 4/5

 KTN2222S/AS

1999. 5. 4 Revision No : 2 5/5