MOSFET

MetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM
OptiMOSTMPower-Transistor,300V
IPB407N30N

DataSheet
Rev.2.0
Final

PowerManagement&Multimarket
 OptiMOSTMPower-Transistor,300V

IPB407N30N

1Description D²PAK

Features
•N-channel,normallevel
•FastDiodewithreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParameters Drain
Pin 2, Tab
Parameter Value Unit
VDS 300 V Gate
Pin 1
RDS(on),max 40.7 mΩ
Source
ID 44 A Pin 3

Type/OrderingCode Package Marking RelatedLinks

IPB407N30N PG-TO 263-3 407N30N -

1)
J-STD20 and JESD22
Final Data Sheet 2 Rev.2.0,2014-12-27
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IPB407N30N

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 3 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 44 TC=25°C
Continuous drain current ID A
- - 34 TC=100°C
Pulsed drain current1) ID,pulse - - 176 A TC=25°C
Avalanche energy, single pulse EAS - - 240 mJ ID=22A,RGS=50Ω
ID=44A,VDS=150V,
Reversediodepeakdv/dt dv/dt - - 60 kV/µs
di/dt=1000A/µs,Tj,max=175°C
Gate source voltage VGS -20 - 20 V -
Diode hard commutation destructive
Ptot - - 300 W TC=25°C
current2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 175 °C
DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case3) RthJC - 0.3 0.5 K/W -
Thermal resistance, junction - ambient,
RthJA - - 62 K/W -
minimal footprint
Thermal resistance, junction - ambient,
RthJA - - 40 K/W -
6 cm2 cooling area4)

1)
See figure 3
2)
Diode pulse current is defined by thermal and/or package limits
3)
Defined by design. Not subject to production test.
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet 4 Rev.2.0,2014-12-27
 OptiMOSTMPower-Transistor,300V

IPB407N30N

4Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 300 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA
- 1 10 VDS=240V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 300 VDS=240V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 36 40.7 mΩ VGS=10V,ID=44A
Gate resistance 1)
RG - 2.4 3.6 Ω -
Transconductance gfs 52 103 - S |VDS|>2|ID|RDS(on)max,ID=44A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 5400 7180 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance 1)
Coss - 281 374 pF VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance1) Crss - 6 13 pF VGS=0V,VDS=100V,f=1MHz
VDD=100V,VGS=10V,ID=22A,
Turn-on delay time td(on) - 16 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=22A,
Rise time tr - 9 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=22A,
Turn-off delay time td(off) - 43 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=22A,
Fall time tf - 9 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 24 - nC VDD=100V,ID=44A,VGS=0to10V
Gate to drain charge Qgd - 7 - nC VDD=100V,ID=44A,VGS=0to10V
Switching charge Qsw - 15 - nC VDD=100V,ID=44A,VGS=0to10V
Gate charge total 1)
Qg - 65 87 nC VDD=100V,ID=44A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=100V,ID=44A,VGS=0to10V
Output charge Qoss - 131 - nC VDD=100V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 5 Rev.2.0,2014-12-27
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IPB407N30N

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continous forward current IS - - 44 A TC=25°C
Diode pulse current 1)
IS,pulse - - 176 A TC=25°C
Diode hard commutation current 2)
IS,hard - - 44 A TC=25°C,diF/dt=1000A/µs
Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C
Reverse recovery time 3)
trr - 152 304 ns VR=100V,IF=32.2A,diF/dt=100A/µs
Reverse recovery charge 3)
Qrr - 844 1689 nC VR=100V,IF=32.2A,diF/dt=100A/µs

1)
Diode pulse current is defined by thermal and/or package limits
2)
Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs
3)
Defined by design. Not subject to production test.
Final Data Sheet 6 Rev.2.0,2014-12-27
 OptiMOSTMPower-Transistor,300V

IPB407N30N

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
350 50

300
40

250

30
200
Ptot[W]

150 ID[A] 20

100

10
50

0 0
0 50 100 150 200 0 50 100 150 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS>=10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

1 µs
2 10 µs
10
0.5

100 µs
ZthJC[K/W]

1 ms
ID[A]

0.2
101 10-1

0.1

10 ms
0.05
0
10
DC 0.02

0.01

single pulse
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
50

10 V
100 40
8V 6V 10 V
8V

5V 30

RDS(on)[mΩ]
ID[A]

50 20

10

0 0
0 1 2 3 4 5 0 20 40 60 80
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
90 150

75 125

60 100
gfs[S]
ID[A]

45 75

30 50

175 °C
15 25
25 °C

0 0
0 2 4 6 0 20 40 60 80
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 8 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
120 4

100
2700 µA
3

80 270 µA
RDS(on)[mΩ]

VGS(th)[V]
60 98% 2

typ
40

20

0 0
-60 -20 20 60 100 140 180 -60 -10 40 90 140 190
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=44A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
Ciss
25 °C
175 °C
25°C, 98%
Coss 175°C, 98%

103

102
C[pF]

IF[A]

102

Crss
101

101

100 100
0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 9 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
102 10

8
240 V

150 V
100 °C 6
25 °C

VGS[V]
IAS[A]

101 125 °C 60 V

100 0
100 101 102 103 0 20 40 60 80
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=44Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

340

330

320
VBR(DSS)[V]

310

300

290

280
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 10 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

6PackageOutlines

Figure1OutlinePG-TO263-3,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.0,2014-12-27

 OptiMOSTMPower-Transistor,300V

IPB407N30N

RevisionHistory
IPB407N30N

Revision:2014-12-27,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-12-27 Release of final version

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InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 12 Rev.2.0,2014-12-27