Power F-MOS FETs

2SK1611
Silicon N-Channel Power F-MOS FET
■ Features
● High avalanche energy capacity
● VGSS: 30V guaranteed unit: mm
● Low RDS(on), high-speed switching characteristic 10.0±0.2 4.2±0.2

0.7±0.1
■ Applications 5.5±0.2 2.7±0.2

4.2±0.2
● High-speed switching (switching power supply, AC adaptor)

7.5±0.2
● For high-frequency power amplification φ3.1±0.1

16.7±0.3
■ Absolute Maximum Ratings (TC = 25°C)
Parameter Symbol Ratings Unit
Drain to Source breakdown voltage VDSS 800 V 1.3±0.2

4.0
1.4±0.1

14.0±0.5
Gate to Source voltage VGSS ±30 V

Solder Dip
0.5 +0.2
–0.1
0.8±0.1
DC ID ±3 A
Drain current
Pulse IDP ±6 A
2.54±0.25

Avalanche energy capacity EAS* 20 mJ

5.08±0.5
Allowable power TC = 25°C 50 1 2 3 1: Gate
PD W 2: Drain
dissipation Ta = 25°C 2 3: Source
EIAJ: SC-67
Channel temperature Tch 150 °C
TO-220 Full Pack Package (a)
Storage temperature Tstg −55 to +150 °C
* Single pulse

■ Electrical Characteristics (TC = 25°C)

Parameter Symbol Conditions min typ max Unit
Drain to Source cut-off current IDSS VDS = 640V, VGS = 0 0.1 mA
Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA
Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 800 V
Avalanche energy capacity EAS* L = 4.5mH, ID = 3A, VDD = 50V 20 mJ
Gate threshold voltage Vth VDS = 25V, ID = 1mA 1 5 V
Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 2A 3.2 4 Ω
Forward transfer admittance | Yfs | VDS = 25V, ID = 2A 1.5 2.4 S
Input capacitance (Common Source) Ciss 730 pF
Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz 90 pF
Reverse transfer capacitance (Common Source) Crss 40 pF
Turn-on time ton 40 ns
VGS = 10V, ID = 2A
Fall time tf 35 ns
VDD = 200V, RL = 100Ω
Turn-off time (delay time) td(off) 105 ns
* Avalanche energy capacity test circuit

ID
Gate VDS C VDD
Drain

PVS Source
RGS

1
Power F-MOS FETs 2SK1611

ID  VDS | Yfs |  ID RDS(on)  ID

6 3.2 10

Drain to source ON-resistance RDS(on) (Ω)

TC=25˚C VDS=25V TC=25˚C

Forward transfer admittance |Yfs| (S)

TC=25˚C
VGS=15V 10V 2.8
5
8
7V
2.4
Drain current ID (A)

6V
4
2.0
6

3 1.6

4
1.2 VGS=10V
2
5V
15V
0.8
50W 2
1
0.4

4V
0 0 0
0 10 20 30 40 50 60 0 1 2 3 4 5 6 0 1 2 3 4 5 6
Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A)

ID  VGS Ciss, Coss, Crss  VDS ton, tf, td(off)  ID

6 10000 160
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Input capacitance (Common source), Output capacitance (Common source),

VDS=25V TC=25˚C
VDD=200V
TC=25V 140 VGS=10V

Switching time ton,tf,td(off) (ns)

5 3000 TC=25˚C
120
Drain current ID (A)

4 1000 td(off)
Ciss 100

3 300 80

60
2 100
ton
40
Coss tf
1 30
20
Crss

0 10 0
0 2 4 6 8 10 0 40 80 120 160 200 240 0 1 2 3 4 5 6
Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A)

PD  Ta Area of safe operation (ASO) EAS  Tj

60 100 30
(1) TC=Ta Non repetitive pulse ID=3A
Avalanche energy capacity EAS (mJ)

(2) Without heat sink TC=25˚C

Allowable power dissipation PD (W)

VDD=50V
(PD=2W) 30
50 25

10 IDP
Drain current ID (A)

40 ID 20
(1) 3 t=1ms

DC
30 1 15

0.3
20 10ms 10
0.1

10 5
0.03
(2)
0 0.01 0
0 20 40 60 80 100 120 140 160 1 3 10 30 100 300 1000 25 50 75 100 125 150 175
Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Junction temperature Tj (˚C)