Main functions[edit]

The most common function of a diode is to allow an electric current to pass in one direction (called
the diode's forward direction), while blocking it in the opposite direction (the reverse direction). As
such, the diode can be viewed as an electronic version of a check valve. This unidirectional behavior
is called rectification, and is used to convert alternating current (AC) to direct current (DC). Forms
of rectifiers, diodes can be used for such tasks as extracting modulation from radio signals in radio
receivers.
However, diodes can have more complicated behavior than this simple on–off action, because of
their nonlinear current-voltage characteristics. Semiconductor diodes begin conducting electricity
only if a certain threshold voltage or cut-in voltage is present in the forward direction (a state in which
the diode is said to be forward-biased). The voltage drop across a forward-biased diode varies only
a little with the current, and is a function of temperature; this effect can be used as a temperature
sensor or as a voltage reference.
A semiconductor diode's current–voltage characteristic can be tailored by selecting
the semiconductor materials and the doping impurities introduced into the materials during
manufacture. These techniques are used to create special-purpose diodes that perform many
different functions. For example, diodes are used to regulate voltage (Zener diodes), to protect
circuits from high voltage surges (avalanche diodes), to electronically tune radio and TV receivers
(varactor diodes), to generate radio-frequency oscillations (tunnel diodes, Gunn diodes, IMPATT
diodes), and to produce light (light-emitting diodes). Tunnel, Gunn and IMPATT diodes
exhibit negative resistance, which is useful in microwave and switching circuits.
Diodes, both vacuum and semiconductor, can be used as shot-noise generators.

Point-contact diodes[edit]
A point-contact diode works the same as the junction diodes described below, but its construction
is simpler. A pointed metal wire is placed in contact with an n-type semiconductor. Some metal
migrates into the semiconductor to make a small p-type region around the contact. The 1N34
germanium version is still used in radio receivers as a detector and occasionally in specialized
analog electronics.[citation needed]

Junction diodes[edit]
p–n junction diode[edit]
Main article: p–n diode
A p–n junction diode is made of a crystal of semiconductor, usually silicon,
but germanium and gallium arsenide are also used. Impurities are added to it to create a region on
one side that contains negative charge carriers (electrons), called an n-type semiconductor, and a
region on the other side that contains positive charge carriers (holes), called a p-type semiconductor.
When the n-type and p-type materials are attached together, a momentary flow of electrons occur
from the n to the p side resulting in a third region between the two where no charge carriers are
present. This region is called the depletion region because there are no charge carriers (neither
electrons nor holes) in it. The diode's terminals are attached to the n-type and p-type regions. The
boundary between these two regions, called a p–n junction, is where the action of the diode takes
place. When a sufficiently higher electrical potential is applied to the P side (the anode) than to the N
side (the cathode), it allows electrons to flow through the depletion region from the N-type side to the
P-type side. The junction does not allow the flow of electrons in the opposite direction when the
potential is applied in reverse, creating, in a sense, an electrical check valve.
Schottky diode[edit]
Main article: Schottky diode
Another type of junction diode, the Schottky diode, is formed from a metal–semiconductor
junction rather than a p–n junction, which reduces capacitance and increases switching speed.

Current–voltage characteristic[edit]

I–V (current vs. voltage) characteristics of a p–n junction diode

A semiconductor diode's behavior in a circuit is given by its current–voltage characteristic, or I–V

graph (see graph below). The shape of the curve is determined by the transport of charge carriers
through the so-called depletion layer or depletion region that exists at the p–n junction between
differing semiconductors. When a p–n junction is first created, conduction-band (mobile) electrons
from the N-doped region diffuse into the P-dopedregion where there is a large population of holes
(vacant places for electrons) with which the electrons "recombine". When a mobile electron
recombines with a hole, both hole and electron vanish, leaving behind an immobile positively
charged donor (dopant) on the N side and negatively charged acceptor (dopant) on the P side. The
region around the p–n junction becomes depleted of charge carriers and thus behaves as
an insulator.
However, the width of the depletion region (called the depletion width) cannot grow without limit. For
each electron–hole pair recombination made, a positively charged dopant ion is left behind in the N-
doped region, and a negatively charged dopant ion is created in the P-doped region. As
recombination proceeds and more ions are created, an increasing electric field develops through the
depletion zone that acts to slow and then finally stop recombination. At this point, there is a "built-in"
potential across the depletion zone.

A PN junction diode in forward bias mode, the depletion width decreases. Both p and n junctions are doped at
a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for
conduction band and valence band in n and p regions (red curves).

Reverse bias[edit]
If an external voltage is placed across the diode with the same polarity as the built-in potential, the
depletion zone continues to act as an insulator, preventing any significant electric current flow
(unless electron–hole pairs are actively being created in the junction by, for instance, light;
see photodiode). This is called the reverse bias phenomenon.
Forward bias[edit]
However, if the polarity of the external voltage opposes the built-in potential, recombination can once
again proceed, resulting in a substantial electric current through the p–n junction (i.e. substantial
numbers of electrons and holes recombine at the junction). For silicon diodes, the built-in potential is
approximately 0.7 V (0.3 V for germanium and 0.2 V for Schottky). Thus, if an external voltage
greater than and opposite to the built-in voltage is applied, a current will flow and the diode is said to
be "turned on" as it has been given an external forward bias. The diode is commonly said to have a
forward "threshold" voltage, above which it conducts and below which conduction stops. However,
this is only an approximation as the forward characteristic is according to the Shockley equation
absolutely smooth (see graph below).[clarification needed]
A diode's I–V characteristic can be approximated by four regions of operation:
 1. At very large reverse bias, beyond the peak inverse voltage or PIV, a process called
reverse breakdown occurs that causes a large increase in current (i.e., a large number of
electrons and holes are created at, and move away from the p–n junction) that usually
damages the device permanently. The avalanche diode is deliberately designed for use in
that manner. In the Zener diode, the concept of PIV is not applicable. A Zener diode
contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of
the p-type material to the conduction band of the n-type material, such that the reverse
voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not
occur. Both devices, however, do have a limit to the maximum current and power they can
withstand in the clamped reverse-voltage region. Also, following the end of forward
conduction in any diode, there is reverse current for a short time. The device does not attain
its full blocking capability until the reverse current ceases.
2. For a bias less than the PIV, the reverse current is very small. For a normal P–N rectifier
diode, the reverse current through the device in the micro-ampere (µA) range is very low.
However, this is temperature dependent, and at sufficiently high temperatures, a substantial
amount of reverse current can be observed (mA or more).
3. With a small forward bias, where only a small forward current is conducted, the current–
voltage curve is exponential in accordance with the ideal diode equation. There is a definite
forward voltage at which the diode starts to conduct significantly. This is called the knee
voltage or cut-in voltage and is equal to the barrier potential of the p-n junction. This is a
feature of the exponential curve, and appears sharper on a current scale more compressed
than in the diagram shown here.
4. At larger forward currents the current-voltage curve starts to be dominated by the ohmic
resistance of the bulk semiconductor. The curve is no longer exponential, it is asymptotic to
a straight line whose slope is the bulk resistance. This region is particularly important for
power diodes. The diode can be modeled as an ideal diode in series with a fixed resistor.
In a small silicon diode operating at its rated currents, the voltage drop is about 0.6 to 0.7 volts. The
value is different for other diode types—Schottky diodes can be rated as low as 0.2 V, germanium
diodes 0.25 to 0.3 V, and red or blue light-emitting diodes (LEDs) can have values of 1.4 V and 4.0 V
respectively.[citation needed]
At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at
full rated current for power diodes.

What is an Ideal Diode?

An ideal diode is one kind of an electrical component that performs like an ideal conductor
when voltage is applied in forward bias and like an ideal insulator when the voltage is
applied in reverse bias. So when +ve voltage is applied across the anode toward the
cathode, the diode performs forward current immediately. When a voltage is applied in
reverse bias, then ir performs no current at all. This diode operates like a switch. When
the diode is in forward bias, it works like a closed switch. Whereas, if an ideal diode is in
reverse bias, then it works like an open switch.

Ideal Diode Circuit Symbol

An ideal diode consists of two terminals like a normal diode. The connections of
component’s end and terminals are polarized. It is important to know that not to combine
the connections on a diode up. The two terminals of an ideal diode are called the anode
and cathode where anode is positive and cathode is negative.
The circuit symbol of an ideal diode is a triangle shape against a line. There are different
kinds of diodes are available in the market, but generally the symbol of the diode will look
like the following diagram. The fatal entering the smooth edge of the triangle signifies the
anode. The flow of current in the triangle direction is pointing, but it cannot go the other
way.

Ideal Diode Circuit

Symbol

Ideal Diode Circuit

As discussed in the above, ideal diode is the simplest device. The circuit symbol for an
ideal diode is shown in the above and demonstrates its two-terminal nature. This means,
that there are two terminals to attach the diode to the exterior circuit, namely the anode
and cathode. The anode terminal is more positive than the cathode terminal and the flow
of current will be in the direction specified.
 Ideal Diode in Circuit

The below circuits are the examples of a couple of simple ideal diode circuits. In the first
circuit, the D1 diode is forward biased and permitting the flow of current through the
circuit. So, its look like a short circuit. Whereas in the second circuit, the D2 diode is
connected in reverse bias, the flow of current cannot flow in the circuit, and it basically
looks like an open circuit.
Ideal Diode Characteristics
The current-voltage characteristic is the most important relationship for the diode. That
defines how the current flows through the component and how the voltage is measured
across it. The i-v arc of an ideal diode is entirely non-linear. It looks something like the
following graph.
 Ideal Diode Characteristics

Threshold Voltage
Ideal diodes do not have a threshold voltage. Once any forward voltage is applied across
the diode, it will conduct current instantly across its junctions

Forward Current
Ideal diodes include unlimited forward current when any forward voltage is applied across
their terminals. This is due to the ideal condition, the inner resistance of the diode would
be zero. The ideal diode would have no inside resistance at all. Since current (Ohms Law
I=V/R), an unlimited amount of current would be performed and supplied to an electrical
circuit with an ideal diode.
Breakdown Voltage
Ideal diodes do not have a breakdown voltage. This is because, the diode has unlimited
resistance to reverse voltage. It will not perform any current at all when voltage is applied
in reverse.
Reverse (leakage) Current
 As an ideal diode does not contain a breakdown end, it never performs any reverse
current termed leakage current. It is an ideal insulator when voltage is applied in reverse.

Thus, this is all about ideal diode and its characteristics. We hope that you have got a
basic information regarding this concept. Furthermore any doubts or to know the types
of diode, please give your feedback by commenting in the comment section below. Here
is a question for you, What is the difference between ideal diode and conventional
diode?

The Diode block represents one of the following types of diodes:

 Piecewise Linear
 Piecewise Linear Zener
 Exponential
Piecewise Linear
The piecewise linear diode model is the same model found in the Simscape™ Diode block, with the
addition of a fixed junction capacitance. If the diode forward voltage exceeds the value specified in
the Forward voltage parameter, the diode behaves as a linear resistor with the resistance specified in
the On resistance parameter. Otherwise, the diode behaves as a linear resistor with the small
conductance specified in the Off conductance parameter. Zero voltage across the diode results in zero
current flowing.

Piecewise Linear Zener

The piecewise linear zener diode model behaves like the piecewise linear diode model for bias voltages
above –Vz, where Vz is the Reverse breakdown voltage Vz parameter value. For voltages less than –Vz,
the diode behaves as a linear resistor with the low Zener resistance specified in the Zener resistance
Rz parameter. This diode model also includes a fixed junction capacitance.

Note
The Reverse breakdown voltage Vz parameter is defined as a positive number. The p-n voltage at
breakdown is –Vz, which is negative.

Exponential
The exponential diode model provides the following relationship between the diode current I and the
diode voltage V:

( ) ( )

I=IS⋅ e m1−1 V>−BVI=−IS⋅ e m1−e m1 V≤−BV

qVNkT −q(V+Vz)kT qVNkT

where:
 q is the elementary charge on an electron (1.602176e–19 Coulombs).
 k is the Boltzmann constant (1.3806503e–23 J/K).
 BV is the Reverse breakdown voltage BV parameter value.
 N is the emission coefficient.
 IS is the saturation current.
 Tm1 is the temperature at which the diode parameters are specified, as defined by the Measurement
temperature parameter value.
When (qV / NkTm1) > 80, the block replaces e m1 with (qV / NkTm1 – 79)e80, which matches the gradient of
qVNkT
the diode current at (qV / NkTm1) = 80 and extrapolates linearly. When (qV /NkTm1) < –79, the block
replaces e m1 with (qV / NkTm1 + 80)e , which also matches the gradient and extrapolates linearly.
–79
qVNkT
Typical electrical circuits do not reach these extreme values. The block provides this linear extrapolation
to help convergence when solving for the constraints during simulation.
When you select Use parameters IS and N for the Parameterization parameter, you specify the diode
in terms of the Saturation current IS and Emission coefficient Nparameters. When you select Use I-V
curve data points for the Parameterization parameter, you specify two voltage and current
measurement points on the diode I-V curve and the block derives the IS and N values. The block then
calculates IS and N as follows:

 N=((V1−V2)/Vt)/(log(I1)−log(I2))
 IS=(I1/(exp(V1/(NVt))−1)+I2/(exp(V2/(NVt))−1))/2
where:
 Vt = kTm1 / q.
 V1 and V2 are the values in the Voltages [V1 V2] vector.
 I1 and I2 are the values in the Currents [I1 I2] vector.
When you select Use an I-V data point and IS for the Parameterization parameter, then the block
calculates N as follows:

(
( ))
N=V1/ Vtlog +1
I1IS
When you select Use an I-V data point and N for the Parameterization parameter, then the block
calculates IS as follows:

IS=I1/(exp(V1/(NVt)−1))
The exponential diode model provides the option to include a junction capacitance:
 When you select Include fixed or zero junction capacitance for the Junction
capacitance parameter, the capacitance is fixed.
 When you select Use parameters CJO, VJ, M & FC for the Junction capacitance parameter, the
block uses the coefficients CJO, VJ, M, and FC to calculate a junction capacitance that depends on the
junction voltage.
 When you select Use C-V curve data points for the Junction capacitance parameter, the block uses
three capacitance values on the C-V capacitance curve to estimate CJO, VJ, and M and uses these
values with the specified value of FC to calculate a junction capacitance that depends on the junction
voltage. The block calculates CJO, VJ, and M as follows:
M
o CJ0=C1((VR2−VR1)/(VR2−VR1(C2/C1)−1/M))
o VJ=−(−VR2(C1/C2)−1/M+VR1)/(1−(C1/C2)−1/M)
o M=log(C3/C2)/log(VR2/VR3)
where:
o VR1, VR2, and VR3 are the values in the Reverse bias voltages [VR1 VR2 VR3] vector.
o C1, C2, and C3 are the values in the Corresponding capacitances [C1 C2 C3] vector.
It is not possible to estimate FC reliably from tabulated data, so you must specify its value using
the Capacitance coefficient FC parameter. In the absence of suitable data for this parameter, use a
typical value of 0.5.
The reverse bias voltages (defined as positive values) should satisfy VR3 > VR2 > VR1. This means that the
capacitances should satisfy C1 > C2 > C3 as reverse bias widens the depletion region and hence reduces
capacitance. Violating these inequalities results in an error. Voltages VR2 and VR3 should be well away from
the Junction potential VJ. Voltage VR1 should be less than the Junction potential VJ, with a typical value
for VR1 being 0.1 V.
The voltage-dependent junction is defined in terms of the capacitor charge storage Qj as:
 For V < FC·VJ:
Qj=CJ0⋅(VJ/(M−1))⋅((1−V/VJ)1−M−1)
 For V ≥ FC·VJ:
Qj=CJ0⋅F1+(CJ0/F2)⋅(F3⋅(V−FC⋅VJ)+0.5(M/VJ)⋅(V2−(FC⋅VJ)2))
where:

 F1=(VJ/(1−M))⋅(1−(1−FC)1−M))
 F2=(1−FC)1+M))
 F3=1−FC⋅(1+M)
These equations are the same as used in [2], except that the temperature dependence of VJ and FC is
not modeled. This model does not include the diffusion capacitance term that affects performance for high
frequency switching applications.
Modeling Charge
For applications such as commutation diodes it can be important to model diode charge dynamics. When
a forward-biased diode has a reverse voltage applied across it, it takes time for the charge to dissipate
and hence for the diode to turn off. The time taken for the diode to turn off is captured primarily by the
transit time parameter. Once the diode is off, any remaining charge then dissipates, the rate at which this
happens being determined by the carrier lifetime.
The Diode block uses the model of Lauritzen and Ma [3] to capture these effects. The three defining
equations are:

I= E M
q −q TT
+ − =0
dqMdt qMτ qE−qMTT
( ( ) )
qE=(τ+TT)IS exp t −1
VN⋅V
where:
 I is the diode current.
 V is the diode voltage.
 N is the emission coefficient.
 qE is the junction charge.
 qM is the total stored charge.
 TT is the transit time.
 τ is the carrier lifetime.
Datasheets do not typically provide values for TT and τ. Therefore the Diode block provides an alternative
parameterization in terms of Peak reverse current, Irrm and Reverse recovery time, trr. Equivalent
values for TT and τ are calculated from these values, plus information on the initial forward current and
rate of change of current used in the test circuit when measuring Irrm and trr. The test circuit can consist of
a series voltage source, resistor, inductor and the diode. The polarity of the voltage source is switched so
as to move the diode from forward conduction to reverse biased. The following figure shows an idealized
diode current response.

The value of the series resistor and applied voltage value determine the initial current IF. The value of the
series inductance and the applied reverse voltage value determine the current gradient, a.
The precise values of peak reverse current and reverse recovery time depend on the test circuit used.
Also, junction capacitance has some effect on the current recovery characteristic. However, a junction
capacitor value that dominates the response is physically unrealistic.
Only the exponential diode supports modeling of the diode charge dynamics. If you select
the Exponential for the Diode model parameter, then the Capacitance tab contains an additional
parameter called Charge dynamics. Select between the three options:
 Do not model charge dynamics
 Use peak reverse current and reverse recovery time
 Use transit time and carrier lifetime
Modeling Temperature Dependence
The default behavior for the Diode is that dependence on temperature is not modeled, and the device is
simulated at the temperature for which you provide block parameters. The Exponential diode model
contains several options for modeling the dependence of the diode current-voltage relationship on the
temperature during simulation. Temperature dependence of the junction capacitance is not modeled, this
being a much smaller effect.
When including temperature dependence, the diode defining equation remains the same. The
measurement temperature value, Tm1, is replaced with the simulation temperature, Ts. The saturation
current, IS, becomes a function of temperature according to the following equation:
 ( )
ISTs=ISTm1⋅(Ts/Tm1) XTI/N
⋅exp − s(1−Ts/Tm1)
EGNkT
where:
 Tm1 is the temperature at which the diode parameters are specified, as defined by the Measurement
temperature parameter value.
 Ts is the simulation temperature.
 ISTm1 is the saturation current at measurement temperature.
 ISTs is the saturation current at simulation temperature. This is the saturation current value used in the
standard diode equation when temperature dependence is modeled.
 EG is the energy gap for the semiconductor type measured in Joules. The value for silicon is usually
taken to be 1.11 eV, where 1 eV is 1.602e-19 Joules.
 XTI is the saturation current temperature exponent. This is usually set to 3.0 for pn-junction diodes, and
2.0 for Schottky barrier diodes.
 N is the emission coefficient.
 k is the Boltzmann constant (1.3806503e–23 J/K).
Appropriate values for XTI and EG depend on the type of diode and the semiconductor material used.
Default values for particular material types and diode types capture approximate behavior with
temperature. The block provides default values for common types of diode.
In practice, the values of XTI and EG need tuning to model the exact behavior of a particular diode. Some
manufacturers quote these tuned values in a SPICE Netlist, and you can read off the appropriate values.
Otherwise you can determine improved estimates for EG by using a datasheet-defined current-voltage
data point at a higher temperature. The block provides a parameterization option for this. It also gives the
option of specifying the saturation current at a higher temperature ISTm2 directly.
You can also tune the values of XTI and EG yourself, to match lab data for your particular device. You can
use Simulink® Design Optimization™ software to help tune the values for XTI and EG.

Caution
Device temperature behavior is also dependent on the emission coefficient. An inappropriate value for the
emission coefficient can give incorrect temperature dependence, because saturation current is a function
of the ratio of EG to N.
If defining a finite reverse breakdown voltage BV, then the value of the reverse breakdown voltage is
modulated by the reverse breakdown temperature coefficient TCV (specified using the Reverse
breakdown voltage temperature coefficient, dBV/dT parameter):
BVTs = BVTm1 – TCV· (Ts – Tm1)

Thermal Port
The block has an optional thermal port, hidden by default. To expose the thermal port, right-click the block
in your model, and then from the context menu select Simscape > Block choices > Show thermal port.
This action displays the thermal port H on the block icon, and adds the Thermal Port tab to the block
dialog box.
Use the thermal port to simulate the effects of generated heat and device temperature. For more
information on using thermal ports and on the Thermal Port tab parameters, see Simulating Thermal
Effects in Semiconductors.

Variables
 Use the Variables section of the block interface to set the priority and initial target values for the block
variables prior to simulation. For more information, see Set Priority and Initial Target for Block
Variables (Simscape).

Basic Assumptions and Limitations

The Exponential diode model has the following limitations:
 When you select Use I-V curve data points for the Parameterization parameter, choose a pair of
voltages near the diode turn-on voltage. Typically, this is in the range from 0.05 to 1 Volt. Using values
outside of this region may lead to numerical issues and poor estimates for IS and N.
 The block does not account for temperature-dependent effects on the junction capacitance.
 You may need to use nonzero ohmic resistance and junction capacitance values to prevent numerical
simulation issues, but the simulation may run faster with these values set to zero.
Parameters
 Main
 Breakdown
 Capacitance
 Temperature Dependence
Main
Diode model
Select one of the following diode models:
 Piecewise Linear (Foundation Library) — Use a piecewise linear model for the diode, as
described in Piecewise Linear. This is the default method.
 Piecewise Linear Zener — Use a piecewise linear model with reverse breakdown
characteristics for the diode, as described in Piecewise Linear Zener.
 Exponential — Use a standard exponential model for the diode, as described in Exponential.
Forward voltage
Minimum voltage that needs to be applied for the diode to become forward-biased. This
parameter is only visible when you select Piecewise Linear (Foundation
Library) or Piecewise Linear Zener for the Diode model parameter. The default value
is 0.6 V.
On resistance
The resistance of the diode when it is forward biased. This parameter is only visible when you
select Piecewise Linear (Foundation Library) or Piecewise Linear Zenerfor the Diode
model parameter. The default value is 0.3 Ω.
Off conductance
The conductance of the diode when it is reverse biased. This parameter is only visible when you
select Piecewise Linear (Foundation Library) or Piecewise Linear Zenerfor the Diode
model parameter. The default value is 1e-08 1/Ω.
Parameterization
Select one of the following methods for model parameterization:
 Use two I-V curve data points — Specify measured data at two points on the diode I-V
curve. This is the default method.
 Use parameters IS and N — Specify saturation current and emission coefficient.
 Use an I-V data point and IS — Specify measured data at a single point on the diode I-V
curve in combination with the saturation current.
 Use an I-V data point and N — Specify measured data at a single point on the diode I-V
curve in combination with the emission coefficient.
This parameter is only visible when you select Exponential for the Diode model parameter.
Currents [I1 I2]
A vector of the current values at the two points on the diode I-V curve that the block uses to
calculate IS and N. This parameter is only visible when you select Exponential for the Diode
model parameter and Use two I-V curve data points for the Parameterization parameter.
The default value is [ 0.0137 0.545 ] A.
Voltages [V1 V2]
A vector of the voltage values at the two points on the diode I-V curve that the block uses to
calculate IS and N. This parameter is only visible when you select Exponential for the Diode
model parameter and Use two I-V curve data points for the Parameterization parameter.
The default value is [ 0.6 0.7 ] V.
Current I1
A current value at the point on the diode I-V curve that the block uses for calculations. This
parameter is only visible when you select Exponential for the Diode model parameter and
either Use an I-V data point and IS or Use an I-V data point and N for
the Parameterization parameter. Depending on the Parameterization value, the block uses this
parameter to calculate either N or IS. The default value is 0.07 A.
Voltage V1
A voltage value at the point on the diode I-V curve that the block uses for calculations. This
parameter is only visible when you select Exponential for the Diode model parameter and
either Use an I-V data point and IS or Use an I-V data point and N for
the Parameterization parameter. Depending on the Parameterization value, the block uses this
parameter to calculate either N or IS. The default value is 0.7 V.
Saturation current, IS
The magnitude of the current that the ideal diode equation approaches asymptotically for very
large reverse bias levels. This parameter is only visible when you select Exponential for
the Diode model parameter and either Use parameters IS and N or Use an I-V data point
and IS for the Parameterization parameter. The default value is 1e-14 A.
Emission coefficient, N
The diode emission coefficient or ideality factor. This parameter is only visible when you
select Exponential for the Diode model parameter and either Use parameters IS and
N or Use an I-V data point and N for the Parameterization parameter. The default value
is 1.
Ohmic resistance, RS
The series diode connection resistance. This parameter is only visible when you
select Exponential for the Diode model parameter. The default value is 0.01 Ω.
Measurement temperature
The temperature Tm1 at which IS or the I-V curve was measured. This parameter is only visible
when you select Exponential for the Diode model parameter. The default value is 25 °C.

Breakdown
This section is not applicable for Piecewise Linear diode models.
 Zener resistance Rz
The resistance of the diode when the voltage is less than the Reverse breakdown voltage
Vz value. This parameter is only visible when you select Piecewise Linear Zener for
the Diode model parameter. The default value is 0.3 Ω.
Reverse breakdown voltage Vz
The reverse voltage below which the diode resistance changes to the Zener resistance
Rz value. This parameter is only visible when you select Piecewise Linear Zener for
the Diode model parameter. The default value is 50 V.
Reverse breakdown voltage BV
The reverse voltage below which to model the rapid increase in conductance that occurs at diode
breakdown. This parameter is only visible when you select Exponential for the Diode
model parameter. The default value is Inf V, which effectively omits reverse breakdown from the
model.

Capacitance
Junction capacitance
 When you select Piecewise Linear (Foundation Library) or Piecewise Linear Zener for
the Diode model parameter, the Junction capacitance parameter is the fixed junction
capacitance value. The default value is 5 pF.
 When you select Exponential for the Diode model parameter, the Junction
capacitance parameter lets you select one of the following options for modeling the junction
capacitance:
o Include fixed or zero junction capacitance — Model the junction capacitance as a fixed
value.
o Use C-V curve data points — Specify measured data at three points on the diode C-V curve.
o Use parameters CJ0, VJ, M & FC — Specify zero-bias junction capacitance, junction
potential, grading coefficient, and forward-bias depletion capacitance coefficient.
Zero-bias junction capacitance CJ0
The value of the capacitance placed in parallel with the exponential diode term. This parameter is
only visible when you select Exponential for the Diode model parameter and Include fixed
or zero junction capacitance or Use parameters CJ0, VJ, M & FC for the Junction
capacitance parameter. The default value is 5 pF.
Reverse bias voltages [VR1 VR2 VR3]
A vector of the reverse bias voltage values at the three points on the diode C-V curve that the
block uses to calculate CJ0, VJ, and M. This parameter is only visible when you
select Exponential for the Diode model parameter and Use C-V curve data points for
the Junction capacitance parameter. The default value is [ 0.1 10 100 ] V.
Corresponding capacitances [C1 C2 C3]
A vector of the capacitance values at the three points on the diode C-V curve that the block uses
to calculate CJ0, VJ, and M. This parameter is only visible when you select Exponential for
the Diode model parameter and Use C-V curve data points for the Junction
capacitance parameter. The default value is [ 3.5 1 0.4 ] pF.
Junction potential VJ
The junction potential. This parameter is only visible when you select Exponential for the Diode
model parameter and Use parameters CJ0, VJ, M & FC for the Junction
capacitance parameter. The default value is 1 V.
Grading coefficient M
 The grading coefficient. This parameter is only visible when you select Exponential for
the Diode model parameter and Use parameters CJ0, VJ, M & FC for the Junction
capacitance parameter. The default value is 0.5.
Capacitance coefficient FC
Fitting coefficient that quantifies the decrease of the depletion capacitance with applied voltage.
This parameter is only visible when you select Exponential for the Diode modelparameter
and Use C-V curve data points or Use parameters CJ0, VJ, M & FC for the Junction
capacitance parameter. The default value is 0.5.
Charge model
Select one of the following methods for charge dynamics parameterization:
 Do not model charge dynamics — Do not include charge dynamics modeling. This is the
default method.
 Use peak reverse current and reverse recovery time — Model charge dynamics by
providing values for peak reverse current, Irrm, and reverse recovery time, trr, plus information on
the initial forward current and rate of change of current used in the test circuit when
measuring Irrm and trr. Use this option if the manufacturer datasheet does not provide values for
transit time, TT, and carrier lifetime, τ.
 Use transit time and carrier lifetime — Model charge dynamics by providing values for
transit time, TT, and carrier lifetime, τ.
Peak reverse current, Irrm
The peak reverse current measured in a test circuit. This parameter is only visible when you
select Exponential for the Diode model parameter and Use peak reverse current and
reverse recovery time for the Charge model parameter. The default value is 7.15 A.
Starting forward current when
measuring Irrm
The initial forward current when measuring peak reverse current. This parameter is only visible
when you select Exponential for the Diode model parameter and Use peak reverse current
and reverse recovery time for the Charge model parameter. The default value is 4 A.
Rate of change of current when
measuring Irrm
The rate of change of current when measuring peak reverse current. This parameter is only
visible when you select Exponential for the Diode model parameter and Use peak reverse
current and reverse recovery time for the Charge model parameter. The default value is -
750 A/us.
Reverse recovery time, trr
The time between the point where the current initially goes to zero when the diode turns off, and
the point where the current falls to less than ten percent of the peak reverse current. This
parameter is only visible when you select Exponential for the Diode model parameter and Use
peak reverse current and reverse recovery time for the Charge model parameter. The
default value is 115 ns.
Transit time, TT
A measure of how long it takes carriers to cross the diode junction. This parameter is only visible
when you select Exponential for the Diode model parameter and Use transit time and
carrier lifetime for the Charge model parameter. The default value is 50 ns.
Carrier lifetime, tau
 A measure of how long it takes for the carriers to dissipate once the diode is no longer
conducting. This parameter is only visible when you select Exponential for the Diode
model parameter and Use transit time and carrier lifetime for the Charge
model parameter. The default value is 100 ns.

Temperature
Dependence
This section is applicable for
Exponential diode models
only.
Parameterization
Select one of the following methods for temperature dependence parameterization:
 None — Simulate at parameter measurement temperature — Temperature dependence is
not modeled, or the model is simulated at the measurement temperature Tm1(as specified by
the Measurement temperature parameter on the Main tab). This is the default method.
 Use an I-V data point at second measurement temperature — If you select this option,
you specify a second measurement temperature Tm2, and the current and voltage values at this
temperature. The model uses these values, along with the parameter values at the first
measurement temperature Tm1, to calculate the energy gap value.
 Specify saturation current at second measurement temperature — If you select this
option, you specify a second measurement temperature Tm2, and saturation current value at this
temperature. The model uses these values, along with the parameter values at the first
measurement temperature Tm1, to calculate the energy gap value.
 Specify the energy gap, EG — Specify the energy gap value directly.
Current I1 at second
measurement
temperature
Specify the diode current I1 value when the voltage is V1 at the second measurement
temperature. This parameter is only visible when you select Use an I-V data point at
second measurement temperature for the Parameterization parameter. The default value
is 0.245 A.
Voltage V1 at second
measurement
temperature
Specify the diode voltage V1 value when the current is I1 at the second measurement
temperature. This parameter is only visible when you select Use an I-V data point at
second measurement temperature for the Parameterization parameter. The default value
is 0.5 V.
Saturation current,
IS, at second
measurement
temperature
Specify the saturation current IS value at the second measurement temperature. This parameter
is only visible when you select Specify saturation current at second measurement
temperature for the Parameterization parameter. The default value is 1.25e-7 A.
Second
measurement
temperature
 Specify the value for the second measurement temperature. This parameter is only visible when
you select either Use an I-V data point at second measurement
temperature or Specify saturation current at second measurement temperature for
the Parameterization parameter. The default value is 125 °C.
Energy gap
parameterizatio
n
This parameter is only visible when you select Specify the energy gap, EG for
the Parameterization parameter. It lets you select a value for the energy gap from a list of
predetermined options, or specify a custom value:
 Use nominal value for silicon (EG=1.11eV) — This is the default.
 Use nominal value for 4H-SiC silicon carbide (EG=3.23eV)
 Use nominal value for 6H-SiC silicon carbide (EG=3.00eV)
 Use nominal value for germanium (EG=0.67eV)
 Use nominal value for gallium arsenide (EG=1.43eV)
 Use nominal value for selenium (EG=1.74eV)
 Use nominal value for Schottky barrier diodes (EG=0.69eV)
 Specify a custom value — If you select this option, the Energy gap, EG parameter appears
in the dialog box, to let you specify a custom value for EG.
Energy gap,
EG
Specify a custom value for the energy gap, EG. This parameter is only visible when you
select Specify a custom value for the Energy gap parameterization parameter. The default
value is 1.11 eV.
Saturation
current
temperatu
re
exponent
parameteri
zation
Select one of the following options to specify the saturation current temperature exponent value:
 Use nominal value for pn-junction diode (XTI=3) — This is the default.
 Use nominal value for Schottky barrier diode (XTI=2)
 Specify a custom value — If you select this option, the Saturation current temperature
exponent, XTI parameter appears in the dialog box, to let you specify a custom value for XTI.
Saturati
on
current
tempera
ture
expone
nt, XTI
Specify a custom value for the saturation current temperature exponent, XTI. This parameter is
only visible when you select Specify a custom value for the Saturation current temperature
exponent parameterization parameter. The default value is 3.
 Rever
se
break
down
volta
ge
temp
eratur
e
coeffi
cient,
dBV/d
T
This coefficient modulates the reverse breakdown voltage BV. If you define the reverse
breakdown voltage BV as a positive quantity, a positive value for TCV implies that the magnitude
of the reverse breakdown voltage decreases with temperature. The default value is 0 V/K.
De
vic
e
sim
ulat
ion
tem
per
atu
re
Specify the value for the temperature Ts, at which the device is to be simulated. The default value
is 25 °C.

P
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a
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e
f
o
ll
o
w
 i
n
g
p
o
rt
s
:
+
Electrical conserving port associated with the diode positive terminal
-
Electrical conserving port associated with the diode negative terminal