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TOPICWISE : ELECTRONIC DEVICES-1 (GATE - 2019) - REPORTS

Preeti Kumari
Course: GATE
Electronics Engineering(EC)

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OVERALL ANALYSIS COMPARISON REPORT SOLUTION REPORT
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ALL(17) CORRECT(0) INCORRECT(0) SKIPPED(17)

Q. 1

Preeti Kumari An n-type silicon sample has diffusion coefficient of electrons 120 cm2/sec and carrier life time of electron is 30 psec. Then the diffusion
Course: GATE length of the sample (Ln) is
Electronics Engineering(EC) FAQ Solution Video Have any Doubt ?

A 0.6 μm Correct Option

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(a)

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B 6 μm
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C
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D None of these

QUESTION ANALYTICS

Q. 2

An intrinsic carrier concentration of a p-type semiconductor is 1 × 1010/cm3 and the majority carrier concentration is 1 × 1018/cm3. Then
minority carrier concentration is
(Assume the p-type semiconductor is under thermal equilibrium)
Solution Video Have any Doubt ?

A 1 × 103/cm3

B 1 × 102/cm3 Correct Option

Solution :
(b)

C 1 × 104/cm3

D 1 × 108/cm3

QUESTION ANALYTICS

Q. 3

The diffusion capacitance (CD) of a p-n junction diode.

Solution Video Have any Doubt ?
 A Increases in proportional to the reverse bias voltage Preeti Kumari 
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B Increases exponentially with forward bias voltage Correct Option

Solution :
(b)

Preeti Kumari
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Electronics Engineering(EC)

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C Decreases exponentially with forward bias voltage

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An abrupt Si p-n junction has doping concentration on p-side and n-side as NA = 1018/cm3 and ND = 5 × 1015/cm3 respectively. Then the
contact potential at the junction is
(Assume intrinsic carrier concentration, = 1.0 × 1010/cm3 and kT = 0.026 V)
FAQ Solution Video Have any Doubt ?

A 0.78 V

B 0.65 V

C 0.82 V Correct Option

Solution :
(c)

D 1.20 V

QUESTION ANALYTICS

Q. 5

A semiconductor bar of length 3 cm having 8 V DC voltage across it. The mobility of electron is 1200 cm2/ V-sec, then drift velocity of
electrons is
Solution Video Have any Doubt ?

A 1.2 × 103 cm/sec

B 2.5 × 103 cm/sec

 C 2.9 × 103 cm/sec Preeti Kumari 
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3 Correct Option
D 3.2 × 10 cm/sec

Solution :
(d)

Preeti Kumari
Course: GATE
Electronics Engineering(EC)

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Q. 6
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The electron concentration in the n-type silicon bar is 1.5 × 1015/cm3. Then Hall coefficient (RH) of the above silicon bar is ____________ × 103
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(Assume charge of electron is 1.6 × 10-19 C).
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STUDENTS ONLY ON BOOK -4.16 (-5 - -4) Correct Option
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Solution :
-4.16 (-5 - -4)

QUESTION ANALYTICS

Q. 7

If a material is having a bandgap of 1.43 eV, then this material will produce a photon output at the wavelength of _________ × 10-4 cm.
FAQ Solution Video Have any Doubt ?

0.867 (0.80 - 0.90) Correct Option

Solution :
0.867 (0.80 - 0.90)

QUESTION ANALYTICS

Q. 8

A p-type silicon sample has resistivity of 5 Ω-cm and hole mobility of μp = 500 cm2/V-sec at a temperature of T = 300 K. Then acceptor
impurity concentration is ________ × 1015 cm-3.
Solution Video Have any Doubt ?
 2.5 (2.00 - 3.00) Correct Option
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Solution :
2.5 (2.00 - 3.00)

Preeti Kumari
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Q. 9
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An junction at zero bias and T = 300 K has dopant concentration of NA = 1017 cm-3 and ND = 2 × 1014 cm-3. Then the fermi level in n-side
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(Assume  = 1.5 × 1010 cm–3; VT = 26 mV)
ASK AN EXPERT FAQ Solution Video Have any Doubt ?

OFFER 0.247 (0.10 - 0.50) Correct Option

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Q. 10

Assume that the mobility of electrons in silicon at T = 300 K is μn = 1300 cm2/V-s. Also assume that the mobility is limited by thermal
motion of atoms and varies with temperature. Then the electron mobility (in cm2/V-sec) at T = 400 K is (approximate value).
FAQ Solution Video Have any Doubt ?

A 975

B 844 Correct Option

Solution :
(b)

C 2001

D 1733

QUESTION ANALYTICS
 Q. 11 Preeti Kumari 
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The probability of an electron is occupied by certain energy level (E ) in a semiconductor is 0.0474. Then how far is this energy level (E) from
the fermi energy level (EF).
(in terms of ‘KT ’)
Solution Video Have any Doubt ?

A E = EF – 2KT

Preeti Kumari
B E = EF + 2KT
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C E = EF + 3KT Correct Option

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Solution :
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D E = EF – 3KT

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Q. 12

In a junction diode, the depletion layer width at a reverse bias voltage of = 1.5 V is 3 μm. For a reverse bias voltage of =
7.5 V, it is found that depletion width is doubled. Then built-in potential at the junction is
Solution Video Have any Doubt ?

A 0.25 V

B 0.50 V Correct Option

Solution :
(b)
 C 0.75 V Preeti Kumari 
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D 1V

QUESTION ANALYTICS

Preeti Kumari
Course: GATE Q. 13
Electronics Engineering(EC)
Consider a pn junction diode with the following parameters:
Doping concentration on n-side, ND = 1015 cm-3
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Doping concentration on p-side, NA = 1017 cm-3
Diffusion lengths, Lp = 0.6 mm and Ln = 0.7 mm
MY TEST
Diffusion coefficients, Dp = 36 cm2/sec and Dn = 49 cm2/sec
BOOKMARKS When a forward voltage of 0.25 V is applied across the diode, then the hole current density in n-region due to the excess minority carriers
injected from p-side to n-side is

MY PROFILE (Assume = 1 × 1010 cm-3 and VT = 26 mV)

FAQ Solution Video Have any Doubt ?
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A 1.44 × 10-5 A/cm2
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B 1.44 × 10-6 A/cm2

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OFFER C 1.44 × 10-7 A/cm2 Correct Option

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D 1.44 × 10-8 A/cm2

QUESTION ANALYTICS

Q. 14

The corresponding doping concentration to get the minimum conductivity in case of lightly doped p-type semiconductor, where intrinsic
carrier concentration = 2.4 × 1010/cm3 is ________ × 1010 cm-3.

FAQ Solution Video Have any Doubt ?

 3.6 (3.30 - 4.00) Correct Option
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Solution :
3.6 (3.30 - 4.00)

Preeti Kumari
Course: GATE
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Q. 15
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An abrupt p-n junction under thermal equilibrium shows the electric field distribution with peak electric field at the junction of –15 × 104 V/m
is shown below. Then the magnitude of the diffusion potential is _______________ V.

Where WP, WN are depletion widths on p, n sides. (Assume thermal voltage as 26 mV).
FAQ Solution Video Have any Doubt ?

0.3 (0.25 - 0.35) Correct Option

Solution :
0.3 (0.25 - 0.35)

QUESTION ANALYTICS

Q. 16

In a silicon p-n junction diode, the excess hole concentration NA = 1016 cm-3, electron concentration ND = 1015 cm-3, the intrinsic carrier
concentration = 1.5 × 1010 cm-3. Then space charge width of the p-n junction will be _________ × 10-5 cm.
(Assume VT = 26 mV, εsi = 12ε0 and q = 1.6 × 10-19 C, ε0 = 8.85 × 10-12 F/m)
Solution Video Have any Doubt ?
 9.64 (9.00 - 10.00) Correct Option
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Solution :
9.64 (9.00 - 10.00)

Preeti Kumari
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Q. 17
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In an abrupt junction, the slope of depletion width (W) versus junction voltage is given by 10.5 × 10-6 cm/V1/2. Then doping
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concentration of n-type atoms is __________ × 1017/cm3.
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(Assume = 1.05 × 10-12 F/cm)
Solution Video Have any Doubt ?

1.19 (0.90 - 2.10) Correct Option

Solution :
1.19 (0.90 - 2.10)

QUESTION ANALYTICS