STRUCTURE OF BIPOLAR JUNCTION TRANSISTOR

The dimensions and doping of the proposed silicon BJT is shown in

Fig.1. This BJT is a vertical structure NPN and can be formed by successive
diffusion or successive implantation. The entire device is supported on a P -
substrate. In Athena process, successive implantation is done to achieve this
structure. The base width WB is taken as 0.2µm and base doping is 7.5x1016/cm3.
Low doping and lesser base width reduce the recombination process associated
with the base thereby increasing the BJT current gain β. The emitter width W E is
0.25µm and emitter is highly doped at 1020/cm3.The collector is a stacked layer
of n-type silicon of doping 1016/cm3 and a N+-buried layer. The heavily doped
N+-buried layer is used to reduce the intrinsic collector resistance. Hence we
have WB<WE<WC and NC<PB<NE. The collector contact is taken from an N+
implant to reduce the contact resistance.
N-type impurity used Aresenic (As)
P-type impurity used Boron (B)

Fig.1 Proposed structure of BJT

 Fig.2 Ideal BJT structure formed using ATLAS

Fig.3 Non-ideal BJT structure formed using ATHENA

 DOPING PROFILES

Fig.4 Doping profile in non-ideal BJT fabricated using ATHENA (log scale)

Fig.5 Doping profile in ideal BJT fabricated using ATLAS (log scale)
 IC , IB vs VBE

Fig.6 IC,IB vs VBE in non-ideal BJT fabricated using ATHENA

Fig.7 IC,IB vs VBE in ideal BJT fabricated using ATLAS

 IC vs VCE at constant IB

Fig.8 IC vs VCE in non-ideal BJT fabricated using ATHENA

Fig.9 IC vs VCE in ideal BJT fabricated using ATLAS

 RESULTS AND COMPARISON BETWEEN TWO
STRUCTURES

Non-ideal Ideal Structure Parameter Serial No.

Structure

8 17 Current Gain 1
β

138 KΩ 121 KΩ Output Impedance 2

RO

0.76 V 0.72 V Cut-in Voltage 3

Vγ

18.8 GHz - Cut-off Frequency 4

fT

i) The doping profile in case of the non-ideal structure is not well

defined. The doping profiles are Gaussian shape whereas in the
ideal structure we have perfect step profiles.
ii) The doping profiles are obtained by implantation. To flatten the
doping profile we can use annealing. But this technique is not
suitable for smaller base and emitter width.
iii) The current gain of the ideal structure is almost double the current
gain of the non-ideal structure. This is because the doping and base
width are not uniform.
iv) The output impedance of the ideal structure is higher than the non-
ideal one.
v) The non-ideal structure also needs higher voltage to turn the device
on indicated by a cut-in voltage difference of 0.04 V.
CONCLUSION
To obtain the ideal structure by process we can go for techniques like poly base
method. In this, we mask the silicon with undoped polysilicon and implant.
Then we anneal so that the profile enters into silicon. By this we can get thin
flat profiles called as box-like profiles.

CODE FOR NON-IDEAL BJT STRUCTURE

go athena

line x loc=0.0 spacing=0.075

line x loc=0.9 spacing=0.075
line x loc=1.2 spacing=0.05
line x loc=1.7 sapcing=0.05
line x loc=2.9 spacing=0.075

line y loc=0.0 spacing=0.075

line y loc=0.2 spacing=0.05
line y loc=0.5 spacing=0.05
line y loc=1.5 spacing=0.075

init c.boron=1e16
implant arsenic dose=7.5e15 energy=250
deposit silicon c.arsenic=1.1e16 thickness=0.95 divisions=10 min.space=0.1
deposit oxide thick=0.4 divisions=10 min.space=0.1
etch oxide left p1.x=0.45
implant boron energy=50 dose=0.48e13
diffuse time=150 temp=920

etch oxide
deposit oxide thick=0.4 divisions=10 min.space=0.1
etch oxide left p1.x=0.15
implant arsenic dose=7.5e15 energy=70
etch oxide
deposit oxide thick=0.4 divisions=10 min.space=0.1
etch oxide right p1.x=1
implant arsenic dose=7.5e15 energy=50
etch oxide
structure reflect left
deposit alum thick=0.05 div=2
etch alum left p1.x=-0.2
etch alum start x=0.2 y=-1
etch continue x=0.4 y=-1
etch continue x=0.4 y=1
etch done x=0.2 y=1
etch alum start x=0.55 y=-1
etch continue x=1.1 y=-1
etch continue x=1.1 y=1
etch done x=0.55 y=1
electrode x=0.0 name=emitter
electrode x=0.45 name=base
electrode x=1.2 name=collector
structure outfile=succ_diff.str

go atlas
models conmob fldmob consrh auger print
contact name=emitter n.poly surf.rec
solve init
method newton autonr trap
solve vcollector=0.025
solve vcollector=0.1
solve vcollector=0.25 vstep=0.25 vfinal=2 name=collector
solve vbase=0.025
solve vbase=0.1
solve vbase=0.2
log outf=bjt_athena0.log
solve vbase=0.3 vstep=0.05 vfinal=0.9 name=base
tonyplot bjt_athena0.log
log off
solve init
solve vbase=0.025
solve vbase=0.05
solve vbase=0.1 vstep=0.1 vfinal=0.7 name=base
contact name=base current
solve ibase=1.e-6
save outf=bjt_athena1.str master
solve ibase=2.e-6
save outf=bjt_athena2.str master
solve ibase=3.e-6
save outf=bjt_athena3.str master
solve ibase=4.e-6
save outf=bjt_athena4.str master
solve ibase=5.e-6
save outf=bjt_athena5.str master
load inf=bjt_athena1.str master
log outf=bjt_athena1.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_athena2.str master
log outf=bjt_athena2.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_athena3.str master
log outf=bjt_athena3.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_athena4.str master
log outf=bjt_athena4.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_athena5.str master
log outf=bjt_athena5.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
tonyplot -overlay bjt_athena1.log bjt_athena2.log bjt_athena3.log bjt_athena4.log
bjt_athena5.log
quit
CODE FOR IDEAL BJT STRUCTURE
go atlas
mesh
x.m l=0 spacing=0.1
x.m l=0.9 spacing=0.1
x.m l=1.2 spacing=0.05
x.m l=1.7 spacing=0.05
x.m l=2.9 spacing=0.1

y.m l=0.0 spacing=0.1

y.m l=0.2 spacing=0.05
y.m l=0.9 spacing=0.05
y.m l=2.4 spacing=0.1

region num=1 silicon

electrode name=emitter x.min=1.25 x.max=1.65 y.max=0

electrode name=base x.min=1.85 x.max=2.05 y.max=0
electrode name=collector x.min=2.6 y.max=0

doping uniform p.type conc=1e16 y.min=1.4 reg=1

doping uniform n.type conc=1e20 y.min=0.9 y.max=1.4 reg=1
doping uniform n.type conc=1e16 y.max=0.9 reg=1
doping uniform p.type conc=0.75e17 x.min=0.9 x.max=2 y.max=0.4 reg=1
doping uniform n.type conc=1e20 x.min=1.2 x.max=1.7 y.max=0.2 reg=1
doping uniform n.type conc=1e20 x.min=2.5 y.max=0.2 reg=1

models conmob fldmob consrh auger print

contact name=emitter n.poly surf.rec

solve init
save outf=bjtex04_0.str
tonyplot bjtex04_0.str -set bjtex04_0.set

method newton autonr trap

solve vcollector=0.025
solve vcollector=0.1
solve vcollector=0.25 vstep=0.25 vfinal=2 name=collector
solve vbase=0.025
solve vbase=0.1
solve vbase=0.2
log outf=bjt_atlas0.log
solve vbase=0.3 vstep=0.05 vfinal=0.9 name=base
tonyplot bjt_atlas0.log

log off
solve init
solve vbase=0.025
solve vbase=0.05
solve vbase=0.1 vstep=0.1 vfinal=0.7 name=base

contact name=base current

solve ibase=1.e-6
save outf=bjt_atlas1.str master
solve ibase=2.e-6
save outf=bjt_atlas2.str master
solve ibase=3.e-6
save outf=bjt_atlas3.str master
solve ibase=4.e-6
save outf=bjt_atlas4.str master
solve ibase=5.e-6
save outf=bjt_atlas5.str master

load inf=bjt_atlas1.str master

log outf=bjt_atlas1.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_atlas2.str master
log outf=bjt_atlas2.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_atlas3.str master
log outf=bjt_atlas3.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_atlas4.str master
log outf=bjt_atlas4.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjt_atlas5.str master
log outf=bjt_atlas5.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector

tonyplot -overlay bjt_atlas1.log bjt_atlas2.log bjt_atlas3.log bjt_atlas4.log bjt_atlas5.log

quit