RGP10A-RGP10M

Discrete POWER & Signal

Technologies

RGP10A - RGP10M
Features
1.0 min (25.4)
• 1.0 ampere operation at TA = 55°C
with no thermal runaway. Dimensions in
inches (mm)
• High temperature metallurgically 0.205 (5.21)
bonded construction. 0.160 (4.06)

• Glass passivated cavity-free junction.

DO-41 0.107 (2.72)
• Typical IR less than 1µA. COLOR BAND DENOTES CATHODE 0.080 (2.03)

• Fast switching for high efficiency. 0.034 (0.86)

0.028 (0.71)

1.0 Ampere Glass Passivated Fast Recovery Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

IO Average Rectified Current 1.0 A
.375 " lead length @ TL = 55°C
if(surge) Peak Forward Surge Current
8.3 ms single half-sine-wave 30 A
Superimposed on rated load (JEDEC method)
PD Total Device Dissipation 2.5 W
Derate above 25°C 17 mW/°C
RθJA Thermal Resistance, Junction to Ambient 50 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +175 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter Device Units

10A 10B 10D 10G 10J 10K 10M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
Maximum Reverse Current
@ rated VR TA = 25°C 5.0 µA
TA = 150°C 200 µA
Maximum Reverse Recovery Time 150 250 500 nS
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A 1.3 V
Typical Junction Capacitance 15 pF
VR = 4.0 V, f = 1.0 MHz

1999 Fairchild Semiconductor Corporation RPG10A - RPG10M, Rev. A

 RGP10A-RGP10M
Typical Characteristics
Forward Current Derating Curve Non-Repetitive Surge Current

PEAK FORWARD SURGE CURRENT (A)

FORWARD CURRENT (A) 1 30

25
0.75
20

0.5 SINGLE PHASE 15

HALF WAVE
60HZ
RESISTIVE OR 10
0.25 INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS 5

0 0
25 50 75 100 125 150 175 1 2 5 10 20 50 100
LEAD TEMPERATURE ( º C) NUMBER OF CYCLES AT 60Hz

Forward Characteristics Reverse Characteristics

10 10

TA = 125 º C

REVERSE CURRENT ( µ A)
FORWARD CURRENT (A)

1 1

TA = 75 º C

0.1 0.1

TA = 25º C
TA = 25º C
Pulse Width = 300µs
2% Duty Cycle
0.01 0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 80 100 120 140
FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Junction Capacitance
100

50
CAPACITANCE (pF)

20

10

1
1 2 5 10 20 50 100
REVERSE VOLTAGE (V)

50Ω 50Ω trr

NONINDUCTIVE NONINDUCTIVE +0.5A

(-)
DUT
Pulse
0
50V Generator
(approx) (Note 2) -0.25A

50Ω (+)
OSCILLOSCOPE
NONINDUCTIVE
(Note 1)

-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm

Reverse Recovery Time Characterstic and Test Circuit Diagram

RPG10A - RPG10M, Rev. A
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.