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Analog Device Equation
Table of Contents
Literature
Useful Constants/Expressions
Device Models
Estimating transistors region of operation using EKV Model [2]
Capacitance
MOS Capacitance in Subthreshold Region
Noise
White Noise
Flicker Noise
Notes from Tsividis [3]
Notes from Abidi, et.al. [4]

Literature
Bibliography
1. Enz, Christian, Krummenacher F., Vittoz E., "An analytical MOS transistor model valid in all
regions of operation and dedicated to low-voltage and low-current applications",Analog
Integrated Circuits and Signal Processing, Vol. 8, no. 1, pp. 83-114, Jul. 1995
2. R. R. Harrison and C. Charles, “A low-power low-noise CMOS amplifier for neural recording
applications,” IEEE Journal of Solid-State Circuits, vol. 38, no. 6, pp. 958 – 965, Jun. 2003.
3. Y. Tsividis and C. McAndrew, "Operation and Modeling of the MOS Transistor, Third Edtion",
(Oxford University Press) 2012.
4. J. Chang, A. A. Abidi, and C. R. Viswanathan, “Flicker noise in CMOS transistors from
subthreshold to strong inversion at various temperatures,” IEEE Transactions on Electron
Devices, vol. 41, no. 11, pp. 1965–1971, Nov. 1994.
5. Y. Nemirovsky, I. Brouk, and C. G. Jakobson, “1/f noise in CMOS transistors for analog
applications,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 921–927, May 2001.
6. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, “A unified model for the flicker noise in metal-
oxide-semiconductor field-effect transistors,” IEEE Transactions on Electron Devices, vol. 37, no.
3, pp. 654–665, Mar. 1990.

Useful Constants/Expressions

Resitor Noise:
Voltage:
Current:
Capacitor Noise:
C in fF

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C in pf
Thermal voltage:
Useful physical constants:

electron mass(free):
Effective mass in silicon:

Some useful relative dielectric constants:

Device Models
Estimating transistors region of operation using EKV Model
[2]
Inversion Characteristic Current:

(1)

where, , and

(2)

where is the oxide capacitance and is the depletion-region capacitance.

Inversion co-efficient (IC) :

(3)

: strong inversion, : deep sub-threshold

Transconductance ( ):

(4)

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where,

(5)

Table 1: Inversion coefficient and their respective gm/Id

IC 0.1 0.5 1.0 5.0 10.0 20.0

gm/Id 28 22 19 11 8 6

Capacitance
MOS Capacitance in Subthreshold Region

In subthreshold region the since there is no channel formed, the gate capacitance w.r.t. bulk is
the series capacitance of and :

(6)

Using Eq.(2) and Eq.(6), we can express as

(7)

where and typically therefore,

and unless bulk is connected to sources in which case

Noise
White Noise

A general expression for white noise in the drain current can be expressed as [3]

(8)

For strong inversion:

(9)

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As expected, in linear region the white noise is that of the channel resistance and it's only
proportional to in saturation mode. The constant is typically 1 for small VDS and much
larger for larger VDS because of hot electron effect.

For weak inversion and large :

(10)

where,

(11)

NOTE: is the same as in Eq.(2). Observe, the weak inversion white noise is similar to BJT's
shot noise.

Flicker Noise

At present, there are two main theories for the physical origin of the flicker noise: first theory
attributes the origin of flicker noise to random fluctuation of the number of carriers in the
channel, due to fluctuations in the surface potential. The second theory attributes flicker noise to
mobility fluctuations, due to carrier interactions with lattice fluctuations.

Notes from Tsividis [3]

The equivalent gate noise based on channel carrier fluctuation can be expressed as [3]:

(12)

where, for n-channel devices, the exponent is between 0.7 and 1.2, and is independent of
bias and dependent on process parameters.

The equivalent gate noise based on channel mobility fluctuation can be expressed as [3]:

(13)

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where is a bias dependent quantity. The inverse proportionality to is not

universally accepted.

A unified theory suggests it is due to both the effects that is correlated to each other. An
approximated value is expressed as:

(14)

where in weak inversion is constant and in strong inversion roughly proportional to

. Deep in strong inversion, n-MOS has been reported to show 2X more noise and
p-MOS as high as 50X.

Although the above results have been recommended for all region of operation, simulation
results from UMC 180nm shows that's not the case.
Both the effects can be present simultaneously and correlated in a given device.
Flicker noise in n-channel is often attributed to carrier fluctuation and p-channel to mobility
fluctuation.
For p-channel it is found that for strong inversion increases approximately linearly
with .
Some reports suggest increases as is decreased in weak inversion.
n-channel are generally found to be significantly noisier than p-channel.

Notes from Abidi, et.al. [4]

For a channel charge fluctuation in linear region:

(15)

and for mobility fluctuation :

(16)

n-channel is believed to be channel charge fluctuation based that is independent of bias.

p-channel is believed to be channel mobility fluctuation based that is dependent on bias.
n-channel in subthreshold shows same behavior as in saturation or linear region.
p-channel noise decreases when bias goes from subthreshold to saturation.
page revision: 26, last edited: 30 Nov 2016, 23:11 (778 days ago)

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