Department of ECE, NIT Sikkim

Subject: Electronic Devices and Circuit (EC12101)

Assignment: Module - 2
Faculty: Dr. Sanjay Kumar Mohanta (Physics)

1. Calculate the density of states per unit volume with energies between 0 and 1 eV for a free
electron.
2. Determine the total number of energy states in silicon between E c and Ec+kT at T = 300 K.
(For Si the effective mass of electron mn* = 1.08m0).

3. Determine the total number of energy states in silicon between E v and Ev-kT at T = 300 K.
(For Si the effective mass of hole mp* = 0.56m0).
4. Find the ratio of the density of states in the conduction band at E c + kT to the density of states
in the valence band at Ev - kT.

5. A silicon sample is doped with P of 1018 donor atoms per cm3. The position of the Fermi level
for this sample is EF = Ei + 0.45eV at 300K. What fraction of the donors is ionized in this
semiconductors? (Donor level of P is 0.045 eV below conduction band).

6. The effective density of states at the conduction band edge of Ge is 1.04 × 1019 cm-3 at room
temperature 300 K. Ge has an optical band gap of 0.66 eV. Determine the intrinsic carrier
concentration (in cm-3) in Ge at room temperature (300 K).
7. In an intrinsic semiconductor, the free carrier
concentration n (in cm-3) varies with temperature T (in
Kelvin) as shown in the figure. Determine the bandgap of the
semiconductor. (use Boltzmann constant kB = 8.625  10-5
eVK-1).

8. Determine Tmax for a GaAs sample doped with 1020 donors m-3. Given that for GaAs, Eg =
1.42 eV and C = 18.11023 m-3.
T2
9. The band gap of Si depends on the temperature as: E g  1.17eV  4.73  10 4
T  636
Find a concentration of electrons in the conduction band of intrinsic (undoped) Si at T = 77 K if
at 300K ni = 1.05×1010 cm-3.

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10. An n-type silicon sample has 21016 arsenic atoms/cm3, 21015 bulk recombination
centers/cm3, and 1010 surface recombination centers/cm2.

(a) Find the bulk minority carrier lifetime, the diffusion length, and the surface recombination
velocity under low-injection conditions. The values of p and s are 510-15 and 210-16 cm2,
respectively.

(b) If the sample is illuminated with uniformly absorbed light that creates 10 17 electron-hole
pairs/cm2-s, what is the hole concentration at the surface. [Given: ni (Si) = 9.65 109 cm-3 at
300K].

11. The temperature dependence of the electrical conductivity σ of two intrinsic semiconductors
A and B is shown in the figure. If E A and EB are the band gaps of A and B respectively, which of
the following is true and why.

(a) EA  EB

(b) EA  EB
(c) EA = EB

(d) EA and EB are both dependent on temperature

12. Find the electron and hole concentrations, mobilities, and resistivities of silicon samples at
300K, for each of the following impurity concentrations: (a) 5  1015 boron atoms/cm3 ; (b) 2 
1016 boron atoms/cm3 and 1.5  1016 arsenic atoms/cm3 ; and (c) 5  1015 boron atoms/cm3, 1017
arsenic atoms/cm3, and 1017 gallium atoms/cm3. [Given: ni (Si) = 9.65 109 cm-3 at 300K].

13. Consider a compensated n-type silicon at T = 300 K, with a conductivity  = 16 (-cm)-1 and
an acceptor doping concentration 1017 cm-3. Determine the donor concentration and the electron
mobility. (A compensated semiconductor is one that contains both donor and acceptor impurity
atoms in the same region). [Given: for ionized impurity (N I) = 3  1017 cm-3, mobility (n) = 510
cm2V-s, and For ionized impurity (NI) = 3.5  1017 cm-3, mobility (n) = 400 cm2V-s]
14. A semiconductor is doped with ND (ND>>ni) and has a resistance R1. The same
semiconductor is then doped with an unknown amount of acceptors NA (N A>>ND), yeilding a
resistance of 0.5 R1. Find NA in terms of ND if Dn/Dp = 50.

15. Calculate the electron and hole concentration under steady-state illumination in an n-type
silicon with GL = 1016 cm-3 s-1, ND = 1015 cm-3, and n = p = 10s.

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16. Assume that an n-type semiconductor is uniformly illuminated, producing a uniform excess
generation rate G. Show that in steady state the change in the semiconductor conductivity is
given by  = q( n + p)pG.
17. The total current in a semiconductor is constant and is composed of electron drift current and
hole diffusion current. The electron concentration is constant and equal to 1016 cm-3. The hole
concentration is given by:
  x  3
px   1015 exp  cm (x  0)
 L 
where L = 12 m. The hole diffusion coefficient is Dp = 12 cm2/s and the electron mobility is n
= 1000 cm2/V-s. The total current density is J = 4.8 A/cm2. Calculate the (a) hole diffusion
current density versus x, (b) electron current density versus x, and (c) electric field versus x.