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𝑑 > 50 𝑚𝑚 𝑊 = 𝑐[𝑙𝑛𝑑 − 𝑙𝑛𝑑]

1 1
50 µ𝑚 < 𝑑 < 50𝑚𝑚 𝑊 = 𝑐 ( − )
√𝑑 √𝑑
1 1
𝑑 < 50 µ𝑚 𝑊 = 𝑐 ( − )
𝑑 𝑑

𝐾𝑇 𝑐
∆𝐺 = − ln ( )
𝑉 𝑐0
2𝛾 (𝑠𝑒𝑛2 𝑐𝑜𝑠 + 2𝑐𝑜𝑠 − 2)
𝑟=− ∗
∆𝐺𝑣 (2 − 3𝑐𝑜𝑠 + cos3)
16𝜋𝛾 3 (2 − 3𝑐𝑜𝑠 + cos3 )
∆𝐺 ∗ = ( 2
)∗
3∆𝐺 4
∆𝑔
𝑝 = exp (− )
𝑘𝑇
𝑘𝑇
𝜔=
3𝜋λ3 µ

𝜕𝑟 ∆𝐶
𝐷𝑖𝑓𝑓 𝐿𝑖𝑚: =𝐷 𝑉𝑚; 𝑟𝜕𝑟 = 𝑐𝑜𝑛𝑠𝑡
𝜕𝑡 𝑑
𝜕𝑟 1 1
𝑀𝑜𝑛𝑜: = 𝑘𝑡 2 ; = − 𝑘𝑡; 𝜕𝑟𝑜 < 𝜕𝑟
𝜕𝑡 𝑟 𝑟𝑜
𝜕𝑟
𝑃𝑜𝑙𝑖𝑛: = 𝑘; 𝑟 = 𝑘𝑡 + 𝑟𝑜; 𝜕𝑟𝑜 = 𝜕𝑟
𝜕𝑡

𝑐𝑙𝑢𝑠𝑡 𝑃𝑡: 𝑓𝑒𝑛𝑎𝑛 𝑠𝑜𝑙𝑓, 𝑜𝑥 𝑐𝑜𝑛𝑡𝑟𝑜𝑙,


4 𝑠ℎ𝑒𝑙𝑙, 𝑠𝑒𝑚𝑖𝑐𝑜𝑛𝑑
𝑐𝑙𝑢𝑠𝑡𝑒𝑟 𝑃𝑑, 𝑎𝑐𝑒𝑡, 𝑓𝑒𝑛𝑎𝑛𝑡𝑟, 𝐻2,
𝑑 = 31,5 − 36𝐴, 7 − 8 𝑠ℎ𝑒𝑙𝑙,
𝑚𝑜𝑛𝑜𝑐𝑟𝑖𝑠𝑡, 𝑐𝑢𝑏𝑖𝑐𝑎 𝑜 𝑒𝑠𝑎𝑔;
𝑑 = 5𝐴 𝑠𝑒𝑝𝑎𝑟𝑎𝑏

Milling 20-100 nm
Au 20-900 nm
Ag 7 nm
Pd 2-4 nm
Rh: 0.8-4 nm
CdSe1.5 -11 nm
InP-GaP 2-5 nm

K W/mK
Cu=380, AL 220
Grafite 5, Pol 2

CdSe, mic inversa,


AOT, SeTMS2, eptano,
+ RSeSiMe3 capping sol

- PdCl2+Na2CO3+H2O=
Pd(OH)2+H2Co3+2NaCl
- PtCl4-2 +H20= PtCl3-1*H20
PtCl3*H20+H20=PtCl2*2H20
Pt(OH)2+H2=Pt+2H20
- Ag, acetone , 2 prop
- Mt(Oet)4+xH20
- Mt(Oet4-x(OH)x+

FASI
S:Tg
SOL: prc+TEOS (80C) gel
->350 essicco->500/700 NP
POL: tutti prex->80:inizai pol
120-> AgOMMA x 20h