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Take-home Assignment 1
Return date: End of Lecture week 5 (by Friday 5:00 PM, 22 March).
Total marks = 25.
Please submit one hardcopy in the assignment box at level 1, TETB (H6)
(near information desk)
Question 1: (a) Calculate the position of the Fermi level with respect to the intrinsic Fermi
level in silicon at 300 K if it is doped with phosphorus atoms at a concentration of 1015 cm-3.
(b) Repeat the calculation if the silicon is doped with boron atoms at a concentration of 1016
cm-3. (c) Calculate the electron concentration in the silicon for (a) and (b).
(3 marks)
Fig. 2Q
Fig. 6
Question 7: Figure 7 shows a schematic diagram of a two-junction tandem solar cell in
series connection. If the band-gap energy of AlInP = 1.9 eV, GaInP = 1.8 eV, AlGaAs = 1.5
eV and GaAs = 1.4 eV, draw the energy band diagram of this tandem solar cell. Draw the
schematic diagram of I-V curves of each single cell as well as tandem cell and briefly explain
them. (4 marks)
Fig. 7