Online Test Series Report for GATE Electronics Engineering

10/4/2018 MADE EASY ONLINE TEST SERIES
Hitesh Ahuja
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TOPICWISE : ELECTRONIC DEVICES-1

(GATE - 2019) - REPORTS
Hitesh Ahuja OVERALL ANALYSIS COMPARISON REPORT

Course: GATE SOLUTION REPORT
Electronics Engineering(EC)
ALL(17) CORRECT(12) INCORRECT(4)
HOME
SKIPPED(1)
MY TEST
Q. 1
BOOKMARKS An n-type silicon sample has diffusion coefficient of
electrons 120 cm2/sec and carrier life time of electron is
MY PROFILE 30 psec. Then the diffusion length of the sample (Ln) is
FAQ Solution Video Have any Doubt ?
REPORTS
A
BUY PACKAGE 0.6 μm
Correct Option
ASK AN EXPERT
Solution :
OFFER (a)
EXCLUSIVE OFFER FOR OTS

STUDENTS ONLY ON BOOK
PACKAGES
B
6 μm
Your answer is Wrong
C
60 μm
D
https://onlinetestseriesmadeeasy.in/madeeasy/index.php?pageName=timeManagementReport&testid=1082&t=a&testType=2 1/15
D
None of these Hitesh Ahuja
QUESTION ANALYTICS
Q. 2
An intrinsic carrier concentration of a p-type

Hitesh Ahuja semiconductor is 1 × 1010/cm3 and the majority carrier
Course: GATE
concentration is 1 × 1018/cm3. Then minority carrier
concentration is
(Assume the p-type semiconductor is under thermal
HOME equilibrium)
Solution Video Have any Doubt ?
MY TEST
A
BOOKMARKS 1 × 103/cm3
MY PROFILE B
1 × 102/cm3
REPORTS Your answer is Correct
BUY PACKAGE Solution :
(b)
ASK AN EXPERT
OFFER

PACKAGES
C
1 × 104/cm3
D
1 × 108/cm3
QUESTION ANALYTICS
Q 3
Q. 3
The diffusion capacitanceHitesh

(CD) ofAhuja
a p-n junction diode.
(Enroll
Solution Video Sign out
User) Have any Doubt ?
A
Increases in proportional to the reverse bias voltage
B
Increases exponentially with forward bias voltage
Hitesh Ahuja Your answer is Correct
Course: GATE
Solution :
(b)
HOME
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
ASK AN EXPERT
C
OFFER Decreases exponentially with forward bias voltage

STUDENTS ONLY ON BOOK D
PACKAGES Increases linearly with forward bias voltage.
QUESTION ANALYTICS
Q. 4
An abrupt Si p-n junction has doping concentration on p-

side and n-side as NA = 1018/cm3 and ND = 5 × 1015/cm3
respectively. Then the contact potential at the junction is
(Assume intrinsic carrier concentration, = 1.0 ×
1010/cm3 and kT = 0.026 V)
A
0.78 V
Hitesh Ahuja
B
0.65 V
C
0.82 V
Your answer is Correct
Hitesh Ahuja
Course: GATE Solution :
Electronics Engineering(EC) (c)
HOME
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
D
ASK AN EXPERT 1.20 V
OFFER
QUESTION ANALYTICS

PACKAGES
Q. 5
A semiconductor bar of length 3 cm having 8 V DC voltage

across it. The mobility of electron is 1200 cm2/ V-sec, then
drift velocity of electrons is
A
1.2 × 103 cm/sec
B
2.5 × 103 cm/sec
C
3
2.9 × 103 cm/sec
Hitesh Ahuja
D
3.2 × 103 cm/sec
Solution :
(d)
Hitesh Ahuja
Course: GATE
HOME
MY TEST
BOOKMARKS
MY PROFILE
QUESTION ANALYTICS
REPORTS
BUY PACKAGE Q. 6
The electron concentration in the n-type silicon bar is 1.5 ×

ASK AN EXPERT
1015/cm3. Then Hall coefficient (RH) of the above silicon
bar is ____________ × 103 cm3/C.
OFFER
(Assume charge of electron is 1.6 × 10-19 C).
EXCLUSIVE OFFER FOR OTS FAQ Solution Video Have any Doubt ?
PACKAGES
4.16 (4.00 - 4.50)

Your answer is Correct4.16
Solution :
4.16 (4.00 - 4.50)
Hitesh Ahuja
QUESTION ANALYTICS(Enroll User) Sign out
Q. 7
If a material is having a bandgap of 1.43 eV, then this

material will produce a photon output at the wavelength of
_________ × 10-4 cm.
Hitesh Ahuja FAQ Solution Video Have any Doubt ?
Course: GATE
0.867 (0.80 - 0.90)

HOME Your answer is Correct0.867
MY TEST Solution :
0.867 (0.80 - 0.90)
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
QUESTION ANALYTICS
ASK AN EXPERT
OFFER Q. 8
A p-type silicon sample has resistivity of 5 Ω-cm and hole

STUDENTS ONLY ON BOOK mobility of μp = 500 cm2/V-sec at a temperature of T = 300
PACKAGES K. Then acceptor impurity concentration is ________ × 1015
cm-3.
2.5 (2.00 - 3.00)

Solution :
2.5 (2.00 - 3.00)
Hitesh Ahuja
QUESTION ANALYTICS
Hitesh Ahuja
Course: GATE Q. 9
An junction at zero bias and T = 300 K has dopant
HOME concentration of NA = 1017 cm-3 and ND = 2 × 1014 cm-3.

Then the fermi level in n-side above the intrinsic fermi level
is ___________ eV.
MY TEST
(Assume = 1.5 × 1010 cm–3; VT = 26 mV)
BOOKMARKS
MY PROFILE
0.247 (0.10 - 0.50)
REPORTS
Solution :
BUY PACKAGE
0.247 (0.10 - 0.50)
ASK AN EXPERT
OFFER

PACKAGES
QUESTION ANALYTICS
Q. 10
Assume that the mobility of electrons in silicon at T = 300

K is μn = 1300 cm2/V-s. Also assume that the mobility is
limited by thermal motion of atoms and varies with
temperature. Then the electron mobility (in cm2/V-sec) at T
= 400 K is (approximate value).
A
Hitesh Ahuja
975 (Enroll User) Sign out
Your answer is Wrong
B
844
Correct Option
Hitesh Ahuja Solution :

(b)
Course: GATE
HOME
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
ASK AN EXPERT
OFFER

STUDENTS ONLY ON BOOK C
PACKAGES
2001
D
1733
QUESTION ANALYTICS
Q. 11
The probability of an electron is occupied by certain energy

level (E ) in a semiconductor is 0.0474. Then how far is this
energy level (E) from the fermi energy level (EF).
(in terms of ‘KT ’)
y
Hitesh Ahuja
A
E = EF – 2KT
B
E = EF + 2KT
C
Hitesh Ahuja
E = EF + 3KT
Course: GATE
Solution :
HOME (c)
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
ASK AN EXPERT
OFFER

PACKAGES
D
E = EF – 3KT
QUESTION ANALYTICS
Q. 12
In a junction diode, the depletion layer width at a

reverse bias voltage of = 1.5 V is 3 μm. For a reverse
bias voltage of = 7.5 V, it is found that depletion

Hiteshpotential
width is doubled. Then built-in Ahuja at the junction is
(Enroll
Solution Video Sign out
User) Have any Doubt ?
A
0.25 V
B
0.50 V
Hitesh Ahuja Your answer is Correct
Course: GATE
Solution :
(b)
HOME
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
ASK AN EXPERT
OFFER

PACKAGES
C
0.75 V
D
1V
QUESTION ANALYTICSHitesh Ahuja

Q. 13
Consider a pn junction diode with the following

parameters:
Doping concentration on n-side, ND = 1015 cm-3
Hitesh Ahuja Doping concentration on p-side, NA = 1017 cm-3

Course: GATE
Diffusion lengths, Lp = 0.6 mm and Ln = 0.7 mm
Electronics Engineering(EC) Diffusion coefficients, Dp = 36 cm2/sec and Dn = 49
cm2/sec
HOME When a forward voltage of 0.25 V is applied across the
diode, then the hole current density in n-region due to the
excess minority carriers injected from p-side to n-side is
MY TEST
(Assume = 1 × 1010 cm-3 and VT = 26 mV)
BOOKMARKS
MY PROFILE A
1.44 × 10-5 A/cm2
REPORTS
B
BUY PACKAGE
1.44 × 10-6 A/cm2
ASK AN EXPERT
C
OFFER 1.44 × 10-7 A/cm2
Correct Option
PACKAGES Solution :
(c)
Hitesh Ahuja
D
1.44 × 10-8 A/cm2
QUESTION ANALYTICS
Hitesh Ahuja
Course: GATE Q. 14
The corresponding doping concentration to get the
minimum conductivity in case of lightly doped p-type
HOME semiconductor, where intrinsic carrier concentration =
2.4 × 1010/cm3 is ________ × 1010 cm-3.
MY TEST
BOOKMARKS
MY PROFILE
3.6 (3.30 - 4.00)

REPORTS Correct Option
BUY PACKAGE
Solution :
3.6 (3.30 - 4.00)
ASK AN EXPERT
OFFER

PACKAGES
Hitesh Ahuja
Your Answer is 4.8
QUESTION ANALYTICS
Q. 15
An abrupt p-n junction under thermal equilibrium shows

Hitesh Ahuja
the electric field distribution with peak electric field at the
Course: GATE
junction of –15 × 104 V/m is shown below. Then the
magnitude of the diffusion potential is _______________ V.
HOME
MY TEST
BOOKMARKS
MY PROFILE
Where WP, WN are depletion widths on p, n sides. (Assume
REPORTS thermal voltage as 26 mV).
BUY PACKAGE
0.3 (0.25 - 0.35)

ASK AN EXPERT
Correct Option
OFFER
Solution :
EXCLUSIVE OFFER FOR OTS 0.3 (0.25 - 0.35)
PACKAGES
Your Answer is 0.45

Hitesh Ahuja
QUESTION ANALYTICS(Enroll User) Sign out
Q. 16
In a silicon p-n junction diode, the excess hole

concentration NA = 1016 cm-3, electron concentration ND =
1015 cm-3, the intrinsic carrier concentration = 1.5 ×
Hitesh Ahuja
Course: GATE 1010 cm-3. Then space charge width of the p-n junction will
Electronics Engineering(EC) be _________ × 10-5 cm.
(Assume VT = 26 mV, εsi = 12ε0 and q = 1.6 × 10-19 C, ε0 =
HOME 8.85 × 10-12 F/m)
MY TEST
BOOKMARKS 9.64 (9.00 - 10.00)

MY PROFILE
Solution :
9.64 (9.00 - 10.00)
REPORTS
BUY PACKAGE
ASK AN EXPERT
OFFER

PACKAGES
QUESTION ANALYTICS
Q. 17
In an abrupt junction, the slope of depletion width (W)

versus junction voltage is given by 10.5 × 10-6

Hitesh Ahuja
cm/V1/2. Then doping concentration
(Enroll User) of n-type Sign
atomsout
is
__________ × 1017/cm3.
(Assume = 1.05 × 10-12 F/cm)
1.19 (0.90 - 2.10)

Hitesh Ahuja Your answer is Correct1.904
Course: GATE
Electronics Engineering(EC) Solution :
1.19 (0.90 - 2.10)
HOME
MY TEST
BOOKMARKS
MY PROFILE
REPORTS
BUY PACKAGE
ASK AN EXPERT
OFFER

PACKAGES
QUESTION ANALYTICS

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10/4/2018 MADE EASY ONLINE TEST SERIES

TOPICWISE : ELECTRONIC DEVICES-1

Hitesh Ahuja OVERALL ANALYSIS COMPARISON REPORT

EXCLUSIVE OFFER FOR OTS

An intrinsic carrier concentration of a p-type

EXCLUSIVE OFFER FOR OTS

The diffusion capacitanceHitesh

EXCLUSIVE OFFER FOR OTS

An abrupt Si p-n junction has doping concentration on p-

EXCLUSIVE OFFER FOR OTS

A semiconductor bar of length 3 cm having 8 V DC voltage

The electron concentration in the n-type silicon bar is 1.5 ×

4.16 (4.00 - 4.50)

If a material is having a bandgap of 1.43 eV, then this

0.867 (0.80 - 0.90)

A p-type silicon sample has resistivity of 5 Ω-cm and hole

2.5 (2.00 - 3.00)

HOME concentration of NA = 1017 cm-3 and ND = 2 × 1014 cm-3.

EXCLUSIVE OFFER FOR OTS

Assume that the mobility of electrons in silicon at T = 300

Hitesh Ahuja Solution :

EXCLUSIVE OFFER FOR OTS

The probability of an electron is occupied by certain energy

EXCLUSIVE OFFER FOR OTS

In a junction diode, the depletion layer width at a

bias voltage of = 7.5 V, it is found that depletion

EXCLUSIVE OFFER FOR OTS

QUESTION ANALYTICSHitesh Ahuja

Consider a pn junction diode with the following

Hitesh Ahuja Doping concentration on p-side, NA = 1017 cm-3

3.6 (3.30 - 4.00)

EXCLUSIVE OFFER FOR OTS

An abrupt p-n junction under thermal equilibrium shows

0.3 (0.25 - 0.35)

Your Answer is 0.45

In a silicon p-n junction diode, the excess hole

BOOKMARKS 9.64 (9.00 - 10.00)

EXCLUSIVE OFFER FOR OTS

In an abrupt junction, the slope of depletion width (W)

versus junction voltage is given by 10.5 × 10-6

1.19 (0.90 - 2.10)

EXCLUSIVE OFFER FOR OTS

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