FDQ7238AS

May 2008

FDQ7238AS
Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package

General Description Features

The FDQ7238AS is designed to replace two single SO-
• Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on RDS(on) = 10.5 mΩ @ VGS = 4.5V
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
TM
technology. The FDQ7238AS • Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V
includes a patented combination of a MOSFET
RDS(on) = 16 mΩ @ VGS = 4.5V
monolithically integrated with a Schottky diode.

S2
S2
S2
G2
SO-14 G1
pin 1 Vin

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q2 Q1 Units

VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±20 V
ID Drain Current - Continuous (Note 1a) 14 11 A
- Pulsed 50 50
PD Power Dissipation for Single Operation (Note 1a & 1b) 2.4 1.8 W
(Note 1c & 1d) 1.3 1.1
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68 °C/W
(Note 1c & 1d) 94 118

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDQ7238AS FDQ7238AS 13” 16mm 2500 units

©2008 Fairchild Semiconductor Corporation FDQ7238AS Rev A1(X)

 FDQ7238AS
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Q2 30 V
Voltage VGS = 0 V, ID = 250 µA Q1 30
∆BVDSS Breakdown Voltage ID = 10 mA, Referenced to 25°C Q2 25 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 24
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V Q2 500 µA
Q1 1
VDS = 24 V, VGS = 0 V, Q2 5.6 mA
TJ = 125°C Q1 40 µA
IGSS Gate-Body Leakage VGS = ±20 V, VDS = 0 V ALL ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA Q2 1 1.8 3 V
VDS = VGS, ID = 250 µA Q1 1 1.7 3
∆VGS(th) Gate Threshold Voltage ID = 10 mA, Referenced to 25°C Q2 −3 mV/°C
∆TJ Temperature Coefficient ID = 250 µA, Referenced to 25°C Q1 −4
RDS(on) Static Drain-Source VGS = 10 V, ID = 14 A Q2 7.2 8.7 mΩ
On-Resistance VGS = 4.5 V, ID = 13 A 8.7 10.5
VGS = 10 V, ID = 14A, TJ = 125°C 10 12.5
VGS = 10 V, ID = 11 A Q1 11 13.2
VGS = 4.5 V, ID = 10 A 13 16
VGS = 10 V, ID = 11, TJ = 125°C 15 19
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V Q2 50 A
VGS = 10 V, VDS = 5 V Q1 50
gFS Forward Transconductance VDS = 10 V, ID = 14 A Q2 58 S
VDS = 10 V, ID = 11 A Q1 43
Dynamic Characteristics
Ciss Input Capacitance Q2 1530 pF
VDS = 15 V, VGS = 0 V, Q1 920
Coss Output Capacitance f = 1.0 MHz Q2 440 pF
Q1 190
Crss Reverse Transfer Capacitance Q2 160 pF
Q1 120
Rg Gate Resistance VGS = 15mV, f = 1.0 MHz Q2 1.9 Ω
Q1 1.9

FDQ7238AS Rev A1 (X)

 FDQ7238AS
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)
td(on) Turn-On Delay Time Q2 12 21 ns
Q1 9 18
tr Turn-On Rise Time Q2 13 23 ns
VDD = 15 V, ID = 1 A, Q1 5 10
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 6 Ω Q2 30 49 ns
Q1 27 43
tf Turn-Off Fall Time Q2 19 35 ns
Q1 4 8
td(on) Turn-On Delay Time Q2 17 30 ns
Q1 11 20
tr Turn-On Rise Time Q2 18 32 ns
VDD = 15 V, ID = 1 A, Q1 15 26
td(off) Turn-Off Delay Time VGS = 4.5V, RGEN = 6 Ω Q2 28 44 ns
Q1 16 29
tf Turn-Off Fall Time Q2 13 23 ns
Q1 9 18
Qg(TOT) Total Gate Charge, VGS = 10V Q2 Q2 28 39 nC
VDS = 15 V, ID = 14A Q1 17 24
Qg(TOT) Total Gate Charge, VGS = 5V Q2 15 21 nC
Q1 Q1 9 19
Qgs Gate-Source Charge VDS = 15 V, ID = 11A Q2 4.1 nC
Q1 2.7
Qgd Gate-Drain Charge Q2 4.9 nC
Q1 3.3
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q2 3.4 A
Q1 2.1
VSD Drain-Source Diode Forward VGS = 0 V, IS = 3.4 A (Note 2) Q2 0.5 0.7 V
Voltage VGS = 0 V, IS = 1.9 A (Note 2) 0.4
VGS = 0 V, IS = 2.1 A (Note 2) Q1 0.7 1.2
trr Diode Reverse Recovery Time IF = 14A Q2 22 ns
Qrr Diode Reverse Recovery Charge dIF/dt = 300 A/µs 15 nC
trr Diode Reverse Recovery Time IF = 11A Q1 16 ns
Qrr Diode Reverse Recovery Charge dIF/dt = 100 A/µs 5 nC
NOTE :

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 68°C/W when c) 118°C/W when mounted

mounted on a 1in2 pad on a minimum pad of 2 oz
of 2 oz copper (Q1). copper (Q1).

b) 52°C/W when d) 94°C/W when mounted on

mounted on a 1in2 pad a minimum pad of 2 oz
of 2 oz copper (Q2). copper (Q2).

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
4

FDQ7238AS Rev A1(X)

 FDQ7238AS
Typical Characteristics: Q2

50 2.6
VGS = 10V 3.5V VGS = 3.0V

DRAIN-SOURCE ON-RESISTANCE
6.0V 4.0V
40 2.2
ID, DRAIN CURRENT (A)

4.5V

RDS(ON), NORMALIZED
30 1.8
3.0V
3.5V
20 1.4
4.0V
4.5V
6.0V
10 1 10.0V

2.5V
0 0.6
0 0.5 1 1.5 2 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.024
ID = 14A ID = 7A
DRAIN-SOURCE ON-RESISTANCE

VGS =10V
RDS(ON), ON-RESISTANCE (OHM)

1.4 0.02
RDS(ON), NORMALIZED

1.2 0.016

TA = 125oC
1 0.012

TA = 25oC
0.8 0.008

0.6 0.004
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

50 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

10
40
ID, DRAIN CURRENT (A)

TA = 125oC
1
30
25oC
0.1

20 o
TA = 125oC o 0.01
-55 C
-55 C

10
0.001
o
25 C
0 0.0001
1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDQ7238AS Rev A1 (X)

 FDQ7238AS
Typical Characteristics : Q2

10 2500
f = 1MHz
ID = 14A
VGS, GATE-SOURCE VOLTAGE (V)

VGS = 0 V
8 2000
VDS = 10V

CAPACITANCE (pF)
20V Ciss
6 1500

15V
4 1000
Coss

2 500

Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 50
100µs P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
1ms RθJA = 94°C/W
RDS(ON) LIMIT 40
10ms TA = 25°C
ID, DRAIN CURRENT (A)

10
100ms
1s 30
10s
1 DC
20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 94oC/W 10
o
TA = 25 C

0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJA(t) = r(t) * RθJA
0.2
THERMAL RESISTANCE

RθJA = 94°C/W
0.1 0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2

SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design

FDQ7238AS Rev A1 (X)

 FDQ7238AS
Typical Characteristics : Q2

SyncFET Schottky Body Diode

Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode Schottky barrier diodes exhibit significant leakage at
exhibits similar characteristics to a discrete external high temperature and high reverse voltage. This will
Schottky diode in parallel with a MOSFET. Figure 12 increase the power dissipated in the device.
shows the reverse recovery characteristic of the
FDQ7238AS Q2. 0.1

IDSS, REVERSE LEAKAGE CURRENT (A)

0.01 TA = 125oC
CURRENT: 0.8A/div

0.001 TA = 100oC

0.0001
TA = 25oC

0.00001
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)

Figure 14. SyncFET body diode reverse

leakage versus drain-source voltage and
temperature.

TIME : 12nS/div

Figure 12. FDQ7238AS SyncFET body

diode reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6670A).
CURRENT: 0.4A/div

TIME : 12nS/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.

FDQ7238AS Rev A 1(X)

 FDQ7238AS
Typical Characteristics: Q1

50 2.6
VGS = 10V 4.0V VGS = 3.0V

DRAIN-SOURCE ON-RESISTANCE
6.0V 4.5V 2.2
40
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
3.5V

30 1.8

3.5V
20 1.4 4.0V
4.5V
3.0V
6.0V
10 10.0V
1

2.5V
0 0.6
0 0.5 1 1.5 2 2.5 0 10 20 30 40 50
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 15. On-Region Characteristics. Figure 16. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5 0.036
ID = 5.5A
ID = 11A
DRAIN-SOURCE ON-RESISTANCE

1.4 0.032
RDS(ON), ON-RESISTANCE (OHM)

VGS = 10V
RDS(ON), NORMALIZED

1.3 0.028

1.2 0.024

o
1.1 0.02 TA = 125 C

1 0.016
TA = 25oC
0.9 0.012

0.8 0.008
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 17. On-Resistance Variation with Figure 18. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.

50 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

10
40
ID, DRAIN CURRENT (A)

o
1 TA = 125 C
30
25oC
0.1

20 o
o o
-55 C -55 C
TA = 125 C 0.01

10
0.001
25oC

0 0.0001
1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 19. Transfer Characteristics. Figure 20. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDQ7238AS Rev A1 (X)

 FDQ7238AS
Typical Characteristics: Q1

10 1500
f = 1MHz
ID = 11A
VGS, GATE-SOURCE VOLTAGE (V)

VGS = 0 V
8 1200
VDS = 10V

CAPACITANCE (pF)
20V Ciss
6 900
15V

4 600

Coss
2 300

Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 21. Gate Charge Characteristics. Figure 22. Capacitance Characteristics.

100 50
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
100µs
RθJA = 118°C/W
RDS(ON) LIMIT 40
1ms TA = 25°C
ID, DRAIN CURRENT (A)

10
10ms
100ms
30
1s
1 10s
DC
20
VGS = 10V
0.1 SINGLE PULSE
RθJA = 118oC/W 10
o
TA = 25 C

0.01 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 23. Maximum Safe Operating Area. Figure 24. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJA(t) = r(t) * RθJA
0.2
THERMAL RESISTANCE

RθJA = 118 °C/W

0.1 0.1
0.05
P(pk)
0.02
0.01 t1
0.01 t2

SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 25. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c
Transient thermal response will change depending on the circuit board design.

FDQ7238AS Rev A1 (X)

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP-SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench® tm

CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™

CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™
MICROCOUPLER™ SMART START™ µSerDes™
MicroFET™ SPM®
®
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SuperMOS™ VisualMax™
®
FastvCore™ ®
FlashWriter® *
tm

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
This datasheet contains the design specifications for product development.
Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Not In Production
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDQ7238AS Rev.A1(X)