SEMICONDUCTOR

TECHNICAL DATA
KGT20N60KDA

General Description

KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A B
O S K
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
DIM MILLIMETERS

C
A _ 0.30
15.90 +

J
B _ 0.20
5.00 +
FEATURES C _ 0.30
20.85 +
D _ 0.20
・High speed switching 3.00 +
_ 0.20
E 2.00 +

G
・High system efficiency F _ 0.20
1.20 +
D M G Max. 4.50
・Short Circuit Withstand Times ≻10us H _ 0.70
20.10 +

H
E _ 0.02
I 0.60 +
・Extremely enhanced avalanche capability J _ 0.20
I 14.70 +
F _ 0.10
K 2.00 +
M _ 0.20
2.40 +
O _ 0.30
3.60 +
P P P _ 0.30
5.45 +
Q _ 0.20
3.60 +
R _ 0.10
7.19 +
1 2 3
1. GATE S
2. COLLECTOR
3. EMITTER

TO-247
MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES ±20 V C

@Tc=25℃ 40 A
Collector Current IC
@Tc=100℃ 20 A
Pulsed Collector Current ICM* 60 A G

Diode Continuous Forward @Tc=25℃ IF 20 A

Diode Maximum Forward Current IFM* 60 A E

@Tc=25℃ 192 W
Maximum Power Dissipation PD
@Tc=100℃ 77 W
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55 to + 150 ℃
*Repetitive rating : Pulse width limited by max. junction temperature

E
THERMAL CHARACTERISTIC C
G
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.65 ℃/W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.55 ℃/W
Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W

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 KGT20N60KDA

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250㎂ 600 - - V
Collector Cut-off Current ICES VGE=0V, VCE=600V - - 250 ㎂
Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=2mA 4.5 5.5 7.0 V
VGE=15V, IC=20A - 1.80 2.20 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=20A, TC = 125℃ - 2.10 - V
VGE=15V, IC=40A, TC = 25℃ - 2.55 - V
Dynamic
Total Gate Charge Qg - 110 - nC
Gate-Emitter Charge Qge VCC=300V, VGE=15V, IC= 20A - 17 - nC
Gate-Collector Charge Qgc - 60 - nC
Turn-On Delay Time td(on) - 34 - ns
Rise Time tr - 24 - ns
Turn-Off Delay Time td(off) - 110 - ns
VCC=300V, IC=20A, VGE=15V,RG=10Ω
Fall Time tf - 35 - ns
Inductive Load, TC = 25℃
Turn-On Switching Loss Eon - 0.3 - mJ
Turn-Off Switching Loss Eoff - 0.3 - mJ
Total Switching Loss Ets - 0.6 - mJ
Turn-On Delay Time td(on) - 34 - ns
Rise Time tr - 24 - ns
Turn-Off Delay Time td(off) - 125 - ns
VCC=300V, IC=20A, VGE=15V,RG=10Ω
Fall Time tf - 35 - ns
Inductive Load, TC = 125℃
Turn-On Switching Loss Eon - 0.3 - mJ
Turn-Off Switching Loss Eoff - 0.3 - mJ
Total Switching Loss Ets - 0.6 - mJ
Input Capacitance Cies - 2000 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 110 - pF
Reverse Transfer Capacitance Cres - 60 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100℃ 10 - - μs

Marking

KGT 1 Device Mark

20N60KDA
001 2 Lot No

2012. 2. 24 Revision No : 0 2/8

 KGT20N60KDA

ELECTRICAL CHARACTERISTIC OF DIODE

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25℃ - 1.7 2.5
Diode Forward Voltage VF IF = 20A V
TC=125℃ - 1.4 -
TC=25℃ - 50 -
Diode Reverse Recovery Time trr ns
TC=125℃ - 80 -
VCE = 300V
TC=25℃ - 12 -
Diode Peak Reverse Recovery Current Irr IF = 20A A
TC=125℃ - 14 -
di/dt = -600A/μs
TC=25℃ - 670 -
Diode Reverse Recovery Charge Qrr nC
TC=125℃ - 750 -

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 KGT20N60KDA

Typical Performance Characteristics

Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics

100 100
20V Common Emitter
90 15V 90 VGE = 15V
Collector Current IC (A)

Collector Current IC (A)

TC = 125 C
80 80
TC = 25 C
70 70
60 60
50 12V 50
40 40
TC = 125 C
30 30
20 10V 20
10 10
0 0
0 2 4 6 8 10 0 1 2 3 4

Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)

Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE

3.5 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)

Common Emitter Common Emitter

VGE = 15V TC = 25 C
16
3.0

IC = 40A 12
2.5
IC = 20A
8

2.0 IC =20A IC = 10A IC = 40A

4

1.5 0
0 20 40 60 80 100 120 140 0 4 8 12 16 20

Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)

Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics

20 3000
Collector - Emitter Voltage VCE (V)

Common Emitter
Common Emitter
VGE = 0V, f = 1MHZ
TC = 125 C
2500 TC = 25 C
16
Cies
Capacitance (pF)

2000
12
1500
IC = 20A
8
IC = 40A 1000
IC = 10A Coes
4
500
Cres
0 0
0 4 8 12 16 20 1 10 100

Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)

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 KGT20N60KDA

Typical Performance Characteristics (Continued)

Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance
100 1000
Common Emitter
VCC = 300V, VGE = 15V
IC = 20A
TC =25 C
Switching Time (ns)

Switching Time (ns)

TC = 125 C
td(on)
td(off)
100
tr
Common Emitter tf
VCC = 300V, VGE = 15V
IC = 20A
25 C
TC =25
TC = 125 C
10 10
0 20 40 60 0 10 20 30 40 50

Gate Resistance RG (Ω) Gate Resistance RG (Ω)

Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current

10 100
Switching Time (ns)
Switching Loss (mJ)

1 Eon

td(on)
Eoff

0.1 Common Emitter

VCC = 300V, VGE = 15V tr Common Emitter
IC = 20A VCC = 300V, RG = 10Ω
TC =25 C TC = 25 C
TC = 125 C TC = 125 C
0.01 10
0 10 20 30 40 50 0 10 20 30 40 50

Gate Resistance RG (Ω) Collector Current IC (Α)

Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current

1000 10
Common Emitter Common Emitter
VCC = 300V, RG = 10Ω VCC = 300V, RG = 10Ω
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C Eon
Switching Loss (mJ)
Switching Time (ns)

1
td(off)
Eoff
100
tf
1.0

10 0.01
0 10 20 30 40 50 0 10 20 30 40 50

Collector Current IC (Α) Collector Current IC (Α)

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 KGT20N60KDA

Typical Performance Characteristics (Continued)

Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics
18 100 50µs
Gate-Emitter Voitage VGE (V)

16
200µs
120V

Collector Current IC (A)

14 10
300V
12 1ms
480V
10
1 10ms
8
DC
Operation
6
Single nonrepetitive pulse
0.1 T = 25 C
4 c
Curves must be derated
2 linearly with increase
in temperature
0 0.01
0 20 40 60 80 100 120 0.1 1 10 100 1000

Gate Charge Qg (nC) Collector-Emitter Voltage VCE (V)

Fig 15. Turn-Off SOA

100
Collector Current IC (A)

10

Turn-Off Safe Operating Area

VGE = 15V, TC =125 C
1
1 10 100 1000

Collector-Emitter Voltage VCE (V)

Fig 16. Transient Thermal Impedance of IGBT

1

0.5
Thermal Resistance (Zthjc)

0.2
0.1
0.1

0.05

0.02
PDM
0.01 0.01
t1

t2

1. Duty factor D=t1/t2

Single Pluse 2. Peak Tj = Pdm Zthjc + TC
0.001
1E-5 1E-4 1E-3 1E-2 1E-1 1E+00 1E+01

Rectangular Pulse Duration (sec)

2012. 2. 24 Revision No : 0 6/8

 KGT20N60KDA

Typical Performance Characteristics

Fig 17. Forward Characteristics Fig 18. Reverse Recovery Current

Reverse Recovery Current IRRM (A)

100 15
TC = 25 C
TC = 125 C
Forward Current IF (A)

di/dt=600A/µs
10
TC = 125 C
10
di/dt=400A/µs
1
TC = 25 C

5
0.1

0.01 0
0 0.5 1 1.5 2 2.5 5 10 15 20 25 30 35 40

Forward Voltage VF (V) Forward Current IF (A)

Fig 19. Reverse Recovery Time

60
Reverse Recovery Time trr (ns)

50 di/dt=400A/µs

40 di/dt=600A/µs

30

20

10

0
5 10 15 20 25 30 35 40

Forward Current IF (A)

2012. 2. 24 Revision No : 0 7/8

 KGT20N60KDA

Definition Switching Time & Loss.

Fig 21. Switching Test Circuit

Diode Clamp C
/DUT
L
G
E
_ +
+ 300V
Measurement -10V
Pulse C
Rg DUT/
DRIVER
G
VGE = 15V E

Fig 22. Definition Switching Time & Loss

GATE VOLTAGE DUT
10% + Vg 90% Vge
+ Vg + Vge

Vce
Vce OUT VOLTAGE
AND CURRENT 10%
10% Vce 90% Ic
Ic
Ic Ic 10% Ic
Vcc Ipk Ic
90% Ic
td (off) tf t2
td (on) tr
ઠ
t2
Eon = Vce Ic dt
t1
ઠ
Eoff = Vce Ic dt
t1

t1 t2
t1 t2

Fig 23. Definition Diode Switching Time

trr
Ic sqq
Qrr =
ઠ Ic dt
tx

sw 10% Irr
Vcc
Vpk

DIODE
REVERSE
WAVEFORMS

2012. 2. 24 Revision No : 0 8/8