NCN@Purdue Summer School, July 20-24, 2009

Graphene PN Junctions

Tony Low and Mark Lundstrom

Network for Computational Nanotechnology
Discovery Park, Purdue University
West Lafayette, IN

1
 acknowledgments

Supriyo Datta and Joerg Appenzeller

2
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

3
 PN junctions: semiconductors vs. graphene

E (x)
EC (x) ∝ − qV (x)
In
− +
EF 1

q (Vbi − VA ) I = I 0 eqVA kb T

EV (x)

I 0 ∝ ni2 ∝ e− EG kb T

4
 experimental observation

GN +
N
ID
GNP

GNP < GN +
N
VA

B. Huard, J.A. Sulpizo, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon,

Transport measurements across a tunable potential barrier in graphene,” Phys.
Rev. Lett., 98, 236803, 2007.

5
electron “optics” in graphene

Semiclassical electron trajectories

are analogous to the rays in
geometrical optics.

If the mfp is long, one may be able

to realize graphene analogues of
optical devices.
 Snell’s Law

n1
n1 sin θ1 = n2 sin θ 2 sin θ 2 = sin θ1
n2

θ2

θ1
y

n1 n2
x
 negative index of refraction

n1
n1 sin θ1 = n2 sin θ 2 sin θ 2 = sin θ1
n2

θ1 θ2 < 0
y

n1 n2 < 0
x
 Veselago lens

n1 > 0 n2 = − n1

9
 theoretical prediction

electron trajectories

N-type P-type
Science, 315, 1252, March 2007

10
 making graphene PN junctions

From: N. Stander, B. Huard, and D. Goldhaber-Gordon, “Evidence for

Klein Tunneling in Graphene p-n Junctions,” PRL 102, 026807
(2009)
11
band diagrams: conventional PN junctions

N+ P
E (x) EC (x)
+
I

Fn EI (x) ∝ − qV (x)

Fp

q (Vbi − VA )
EV (x)

12
 band diagrams: graphene PN junctions

E E

E
ENP (x) ∝ − qV (x)
E kx
EF 1 kx

kx

x
13
 an abrupt graphene N+N junction

υ x = +υ F υ x = +υ F
E (x) E E

EF 1

kx
ENP (x)

qVJ < 0
kx

Apply a low bias. Conduction occurs

through states near the Fermi level.

14
 an abrupt graphene PN junction
υ x = +υ F
E (x) E

υ x = +υ F
E kx
ENP (x)
EF 1 qVJ

kx

Apply a low bias. Conduction occurs

through states near the Fermi level.

Note that kx – kx015changes sign!

 conductance of graphene junctions
N+N NP
υ x = +υ F
E (x) E υ x = +υ F E υ x = +υ F
E (x)
E
EF 1

kx υ x = +υ F
kx
ENP (x) E
ENP (x)
EF 1
qVJ qVJ
kx kx

x x

GN +
N
ID
GNP NI
E (x) υ x = +υ F
GNI υ x = +υ F
E
E
VA EF 1 kx
ENP (x)
kx qVJ

x
16
 objectives

To understand:

1) Electron “optics” in NP junctions

2) The conductance of NP and NN junctions

17
 about graphene

E (k ) =
± υ F k =
± υ F k x2 + k y2
E (x)
1 ∂E
(k )
υ= = υF
 ∂k
EF 1 ∂E
υ= ( k ) = υ F cos θ
 ∂k x
x

gV = 2 1 ∂E
y (k )
υ= = υ F sin θ
kx
 ∂k y
“neutral point”
υ F ≈ 1 × 10 8 cm/s
“Dirac point” ky
D( E ) = 2 E π  2υ F2

M ( E ) = W 2 E π υ F
18
electron wavefunction in graphene

 1  i (kx x + ky y)
ψ (x, y) =  iθ  e
 se 
s = sgn (E )

ψ (x, y) =
1
e(x )
i k x + ky y θ = arctan (ky kx )
A
y

x
 absence of backscattering

E (x)   i (kx x + ky y)
 1   1  ψ (x, y) = 
1
e
 1   se 
iθ
 −1 
EF s = sgn (E ) θ = arctan (ky kx )

kx
 ky 
k′ k
kx

20
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

21
 a graphene PN junction
N-type P-type
E (x) υ x = −υ F E υ x = +υ F

υ x = +υ F kx
E ENP (x)
EF 1
kx

  ky  ky  
υ parallel to k 
υ υ
 υ anti-parallel to k
kx kx
group velocity and wavevector

E (x) 
1 ∂E k
( )
υ g=k = υ
 ∂k
F
k
group velocity parallel to k

kx

group velocity parallel to -k

ky 
1 ∂E k
υg ( k ) = = −υ F
 ∂k k

23
what happens for parabolic bands?

E (k )

conduction band
k x 1
υg ( kx ) = + * υ g ( k )= ∇k E ( k )
m 

kx

valence band
k x ky
υg ( kx ) = − *
m

24
 optics

 Snell’s Law
kr 
kt θ r = θi
θ1′ θ2
θ1 n1 sin θ1 = n2 sin θ 2

ki n1 n2


υ r 
υ t group velocity parallel to
θ1′ θ2
wavevector
θ1

υ i n1 n2

25
 electron trajectories in graphene PN junctions
rays in geometrical optics are analogous to semiclassical electron trajectories

y
 1) ky is conserved
kr 
kt kyi = kyr = kyt
θ1′ θ2
x
θ1
 2) Energy is conserved
ki
N-type P-type
Ei = Er = Et



Fe =
d k( ) = −qE
dt
26
 on the N-side…
y

kr E F = υ F k F

θ1′
kt
θ2
x kyi = kF sin θ1 = kyi = kF sin θ1′
θ1

ki θ1 = θ1′
N-type P-type

k=
i
y k=
r
y k yt angle of incidence =
angle of reflection
Ei = Er = EF

27
 a symmetrical PN junction

N-type P-type
E (x) E υ x = +υ F
υ x = −υ F

υ x = +υ F kx
E ENP (x)
EF ε2 EF − ENP ( x )
kF =
ε1 υ F
kx
x
One choice for ky,
but two choices
for kx.
Symmetrical junction:
EF − ENP (0 ) = ENP (L) − EF
kFi = kFt
− qVJ = 2  EF − ENP (0 )
28
 wavevectors
y
 1) transverse momentum (ky) is
kr θ ′ conserved
1
x 2) transmitted electron must have a
 θ1 θ2  positive x velocity
ki N-type P-type kt
ky ky
 
k =k =k υ υ
i r t
y y y

kxi = − kxr = − kxt kx kx

The sign of the tangential

υ
k-vector (ky) stays the
same, and the normal
component (kx) inverts.
   
υ parallel to k υ anti-parallel to k
29
 wavevectors and velocities
y

kr θ ′ kyi = kyr = kyt
1
x
 θ1 θ2  kxi = − kxr = − kxt
ki N-type P-type kt

y θ1 = θ1′

υ
r θ 2 = −θ1
θ1′
x
 θ1 θ2  n1 sin θ1 = n2 sin θ 2
υ i N-type P-type υ t n1 = −n2
“negative index of refraction”
 more generally


1) y-component of υ r
momentum θ1′
conserved
 θ1 θ2 
υ υt

2) energy conserved i N-type P-type

θ1 = θ1′
ε1 sin θ1 = ε 2 sin θ 2 (ε = EF − ENP )
critical angle for total internal reflection

θ C = sin −1 (ε 2 ε1 ) (ε1 > ε 2 )

31
 reflection and transmission


υ r
θ1′
 θ1 θ2 
υt
υ
i 
N-type P-type

We know the direction of the reflected and transmitted rays,

but what are their magnitudes?

32
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

33
 reflection and transmission
y

kr θ ′
1
R(θ i ) ∝ r T (θ i ) ∝ t
2
2 x
 θ1 θ2 
ki N-type P-type kt

1) incident wave: 3) transmitted wave:

 1  i (kx x + ky y)  1  i (− kx x + ky y)
ψ i (x, y) =  iθ  e ψ (x, y) = t  iθ  e
 se   se 
2) reflected wave:
 1  i (− kx x + ky y)
ψ r (x, y) = r  iθ  e
s = sgn (E ) θ = arctan (ky kx )
34
 se 
 transmission: abrupt, symmetrical NP junction

ky
incident 
υ

kx

T (θ i ) = cos 2 θ i
ky
transmitted

−30 υ

kx
1.00 −60
−90

perfect transmission for  = 0

 conductance of abrupt NN and NP junctions

T (θ i ) = cos 2 θ i

This transmission reduces the conductance of NP junctions

compared to NN junctions, but not nearly enough to explain
experimental observations.
 a graded, symmetrical PN junction
The Fermi level passes through the neutral point in the transition region of an NP
junction. This does not occur in an NN or PP junction, and we will see that this
lowers the conductance of an NP junction.

N-type P-type
E (x) E
E
υ x = +υ F
E
ENP (x)
EF − ε1 kx
ε1
kx
x

37
 treat each ray (mode) separately

y 
ki ky = kF sin θ
θ
x =E  υ F k 2
x + k 2
F sin 2
θ

E E
E = k Fυ F sin θ
kx = 0
ky kx

E = −k Fυ F sin θ

EG = 2υ F k F sin θ
38
 for each ky (transverse mode)
band to band tunneling (BTBT)

N-type P-type
E (x) E
E
υ x = +υ F
E
ENP (x)
EF − ε1 kx
ε1
kx
x

d EG = 2υ F k F sin θ

39
NEGF simulation

T. Low, et al., IEEE TED, 56,

1292, 2009
40
 propagation across a symmetrical NP junction

kx2 < 0 E
E
E (x)
kx > 0 ENP (x) = ε1
kx
E − ε1
EF
kx
ε1
ENP (x) = −ε1 kx < 0
kx
ε ( x ) υ F k x2 + k y2
=

ε ( x ) υ F k x2 + k F2 sin 2 θ
=
d
x k x2 ( x ) (ε ( x ) υF ) − kF2 sin 2 θ
2
=
41
 WKB tunneling

k x2 ( x ) (ε ( x ) υF ) − kF2 sin 2 θ For normal incidence, kx is real

2

 perfect transmission

ψ
 (x ) : eikx x For any finite angle, there will a
region in the junction where kx is
imaginary  evanescent
+l
Slowly varying potential 
−2 i ∫ kx (x)dx
T : e −l no reflections.

2ε1 2υ F k F
T (θ )  e −π kF d sin θ
EG = 2υ F k F sin θ E
= =
2

qd qd

−π EG2 ( 2 qυ FE )
T e
42
 transmission vs. angle

T (θ ) = cos2 θ
More generally, to include the
reflections for abrupt junctions
T (θ ) = e − π kF d sin 2 θ (small d):

 ( )
− π kF d sin 2 θ
T θ : cos θ e
2

−30

−60
−90

43
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

44
 graphene junctions: NN, NP, PP, PN

E (x) E
↑
− qVJ > EF
↑ E kx
ENP = − qVJ
P
EF > 0 EF qVJ < 0
N kx
x N
P − qVJ < EF
EF < 0 ↓
↓

two independent variables: 1) EF and 2) VJ

45
 graphene junctions

qVJ > EF, right side N-type

EF > 0, left side N-type

↑
NP NN
EF
PP PN
EF < 0, left side P-type

qVJ < EF, right side P-type

0
qVJ → − qVJ = EF
46
 conductance of graphene junctions

2q2 2q2 1
G= M (EF ) GW= min (M1 , M 2 )
h h W

M 2 < M1
E (x)
E

E
kx
ENP = − qVJ
EF
kx
x

i) EF > 0, qVJ < EF ⇒ NP

47
 conductance vs. EF and VJ

E (x) EF = 0.3
EPN = 0.6 EPN = − qVJ
x
E (x)
x
EF

T. Low, et al., IEEE TED, 56,

48 1292, 2009
 measured transport across a tunable barrier

EF

B. Huard, J. A. Sulpizio, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon, “Transport

Measurements Across a Tunable Potential Barrier in Graphene, Phys. Rev. Lett., 98, 236803,
2007.
 experimental resistance

B. Huard, J. A. Sulpizio, N. Stander, K. Todd, B. Yang, and D. Goldhaber-Gordon, “Transport

Measurements Across a Tunable Potential Barrier in Graphene, Phys. Rev. Lett., 98, 236803,
2007.
 NEGF simulation of abrupt junctions

GPN < GNN

GPN GNN

E (x) EF = 0.3
EPN = − qVJ
x

T. Low, et al., IEEE TED, 56,

51 1292, 2009
 conductance of abrupt graphene junctions
GNN

EF = 0.3 EF = 0.3
GPN
N-type P-type N-type N + -type

2
2 GNP = GNN
∑T (k )
2q
GNP = 3
2q2
h ky
y
GNN W = M (EF )
h
2 2
k  k 
T (θ ) = cos 2 θ =  x  = 1 −  y 
k  F k  F

2  2q2  GNP < GNN

GNP W=  M (EF )
3 h 

52
 conductance of graded graphene junctions

EF = 0.3 EF = 0.3

N-type P-type GNP << GNN N-type N + -type

∑ T (ky )
2q2
GNP =
h 2q2
GNN W = M (EF )
ky

h
T (θ ) = e− π kF d sin θ = e
2 (
− π kF d ky kF )
2

GNP = GNN kF d

kF d >> 1 → λF << d
T. Low, et al., IEEE TED, 56,
53 1292, 2009
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

54
 conductance vs. gate voltage measurements
either N-type or P-type either N-type or P-type
depending on the back depending on the
gate voltage metal workfunction

graphene G
SiO2
L
Back gate
(doped Si)

VG′
VG B. Huard, N. Stander, J.A. Sulpizo, and D.
Goldhaber-Gordon, “Evidence of the role of
contacts on the observed electron-hole
asymmetry 55in graphene,” Pbys. Rev. B., 78,
121402(R), 2008.
 outline

1) Introduction
2) Electron optics in graphene
3) Transmission across NP junctions
4) Conductance of PN and NN junctions
5) Discussion
6) Summary

56
 conclusions

1) For abrupt graphene PN junctions transmission is

reduced due to wavefunction mismatch.
2) For graded junctions, tunneling reduces transmission
and sharply focuses it.
3) Normal incident rays transmit perfectly
4) The conductance of a graphene PN junction can be
considerably less than that of an NN junction.
5) Graphene PN junctions may affect measurements and
may be useful for focusing and guiding electrons.

57
questions

58