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SEMICONDUCTOR KHB7D0N65P1/F1/F2

N CHANNEL MOS FIELD


TECHNICAL DATA EFFECT TRANSISTOR

General Description
KHB7D0N65P1
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for active power factor B
A _ 0.2
9.9 +
B 15.95 MAX
correction and switching mode power supplies. Q C 1.3+0.1/-0.05
I D _ 0.1
0.8 +
E _ 0.2
3.6 +
K P F 2.8 +_ 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS=650V, ID=7A J I 1.5
D J 13.08 +_ 0.3
Drain-Source ON Resistance : N N H K 1.46
L _ 0.1
1.4 +
RDS(ON)=1.4 @VGS=10V M _ 0.1
1.27 +
_ 0.2
Qg(typ.)= 32nC N 2.54 +
_
O 4.5 + 0.2
1 2 3 P 2.4 +_ 0.2
1. GATE
2. DRAIN Q _ 0.2
9.2 +
MAXIMUM RATING (Tc=25
www.DataSheet4U.com ) 3. SOURCE

RATING
TO-220AB
CHARACTERISTIC SYMBOL KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
KHB7D0N65F1
Drain-Source Voltage VDSS 650 V A C

F
Gate-Source Voltage VGSS 30 V

O
E DIM MILLIMETERS
@TC=25 7 7*

B
A _ 0.2
10.16 +

G
ID B _ 0.2
15.87 +
Drain Current @TC=100 4.2 4.2* A C 2.54 +_ 0.2
D _ 0.1
0.8 +
E _ 0.1
3.18 +
Pulsed (Note1) IDP 28 28*
K

F _ 0.1
3.3 +
G _
12.57 + 0.2
Single Pulsed Avalanche Energy EAS L M
212 mJ R H _ 0.1
0.5 +
(Note 2) J J 13.0 MAX
K _ 0.1
3.23 +
Repetitive Avalanche Energy EAR
D
1.6 mJ L 1.47 MAX
(Note 1) N N
M 1.47 MAX
H
N 2.54 +_ 0.2
Peak Diode Recovery dv/dt _ 0.2
dv/dt 4.5 V/ns O 6.68 +
(Note 3) Q _ 0.2
4.7 +
R _ 0.2
2.76 +
Q

1 2 3
Drain Power Tc=25 160 52 W
1. GATE
PD 2. DRAIN
Dissipation Derate above 25 1.28 0.42 W/ 3. SOURCE

Maximum Junction Temperature Tj 150 TO-220IS (1)


Storage Temperature Range Tstg -55 150
KHB7D0N65F2
Thermal Characteristics
A C
Thermal Resistance, Junction-to-Case RthJC 0.78 2.4 /W
F

S
P

Thermal Resistance, Case-to-Sink RthCS 0.5 - /W E DIM MILLIMETERS


A _ 0.3
10.0 +
B

Thermal Resistance, B _ 0.3


G

15.0 +
RthJA 62.5 62.5 /W C _ 0.3
2.70 +
Junction-to-Ambient D 0.76+0.09/-0.05
E Φ3.2 + _ 0.2
* : Drain current limited by maximum junction temperature. L L F _ 0.3
3.0 +
K

R
G _ 0.3
12.0 +
PIN CONNECTION M H 0.5+0.1/-0.05
J

D D J _ 0.5
13.6 +
D K _ 0.2
3.7 +
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _ 0.1
2.54 +
P _ 0.1
6.8 +
Q _ 0.2
4.5 +
R _ 0.2
2.6 +
0.5 Typ
Q

1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE

S TO-220IS

2007. 5. 10 Revision No : 0 1/7


KHB7D0N65P1/F1/F2

ELECTRICAL CHARACTERISTICS (Tc=25 )


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 650 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.8 - V/
Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 1.2 1.4
Dynamic
Total Gate Charge Qg - 32 40
www.DataSheet4U.com VDS=520V, ID=7.0A
Gate-Source Charge Qgs - 5.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 12.6 -
Turn-on Delay time td(on) - 20 45
VDD=325V
Turn-on Rise time tr - 40 90
RL=46 ns
Turn-off Delay time td(off) - 125 260
RG=25 (Note4,5)
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 1310 1700
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 113 147 pF
Reverse Transfer Capacitance Crss - 11.4 14.8
Source-Drain Diode Ratings
Continuous Source Current IS - - 7
VGS<Vth A
Pulsed Source Current ISP - - 28
Diode Forward Voltage VSD IS=7.0A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=7.0A, VGS=0V, - 410 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.

2007. 5. 10 Revision No : 0 2/7


KHB7D0N65P1/F1/F2

Fig1. ID - VDS Fig2. ID - VGS

VGS
TOP : 15.0 V
10.0 V
1
8.0 V 10
Drain Current ID (A)

Drain Current ID (A)


1 7.0 V
10 6.0 V
5.5 V
Bottom : 5.0 V 150 C

25 C
10
0 -55 C
0
10

-1 -1
10 0 1
10
10 10 2 4 6 8 10
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Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID


Normalized Breakdown Voltage BVDSS

1.2 3.0
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250

1.1 2.5

1.0 2.0

VG = 10V
0.9 1.5
VG = 20V

0.8 1.0
-100 -50 0 50 100 150 0 5 10 15

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 3.75A
2.5
Normalized On Resistance

1
10
2.0

1.5
0
10
1.0
150 C 25 C

0.5

-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

2007. 5. 10 Revision No : 0 3/7


KHB7D0N65P1/F1/F2

Fig7. C - VDS Fig8. Qg- VGS

4500 12
Frequency = 1MHz ID=7A

Gate - Source Voltage VGS (V)


4000
10 VDS = 520V
3500
Capacitance (pF)

VDS = 325V
3000 8
VDS = 130V
2500
6
2000 Ciss

1500 4
Coss
1000
2
Crss
500
0 0
10-1 100 101 0 4 8 12 16 20 24 28 32
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Drain - Source Voltage VDS (V) Gate - Charge Qg (nC)

Fig9. Safe Operation Area Fig10. Safe Operation Area


(KHB7D0N65P1) (KHB7D0N65F1, KHB7D0N65F2)

Operation in this Operation in this


100µs
area is limited by RDS(ON) 10 µs
area is limited by RDS(ON)
101 101
Drain Current ID (A)
Drain Current ID (A)

1ms 100µs
10ms
1ms
100ms
10 ms
100 DC 100 DC

10-1 10-1
Tc= 25 C Tc= 25 C
Tj = 150 C Tj = 150 C
Single nonrepetitive pulse
2 Single nonrepetitive pulse
10 10-2 0
100 101 102 103 10 101 102 103

Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)

Fig11. ID - Tj

8
Drain Current ID (A)

0
25 50 75 100 125 150

Junction Temperature Tj ( C)

2007. 5. 10 Revision No : 0 4/7


KHB7D0N65P1/F1/F2

Fig12. Transient Thermal Response Curve


Normalized Transient Thermal Resistance

100

Duty=0.5

0.2
PDM
10-1 0.1
t1
0.05
t2
0.02
0.01 - Duty Factor, D= t1/t2
Single Pulse
10-2
-5 10-4 10-3 10-2 10-1 100 101
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TIME (sec)

Fig13. Transient Thermal Response Curve


Normalized Transient Thermal Resistance

100

Duty=0.5

0.2
PDM
10-1 0.1
t1
0.05
t2
0.02

0.01
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

2007. 5. 10 Revision No : 0 5/7


KHB7D0N65P1/F1/F2

Fig14. Gate Charge


VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
www.DataSheet4U.com Qg
VGS

Fig15. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)


10 V

Time
tp
Fig16. Resistive Load Switching

VDS
90%

RL

50V VGS 10%


td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

2007. 5. 10 Revision No : 0 6/7


KHB7D0N65P1/F1/F2

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current


VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.8 VDSS
VDS Body Diode Recovery dv/dt
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(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

2007. 5. 10 Revision No : 0 7/7