RK9410

Transistors

Switching (30V, 7A)

RK9410

zFeatures zExternal dimensions (Units : mm)

1) Low Qg.
2) Low on-resistance.

+0.1
0.4−
Max.1.75
3) Exellent resistance to damage from static electricity.

0.1
(5) (4)

+0.2
5.0−

1.27
(8) (1)
+0.15
3.9−
zStructure +0.3
6.0− 1.5−
0.15
+0.1
Silicon N-channel
MOS FET +0.1
0.5−

+0.1
0.2−
Each lead has same dimensions
zEquivalent circuit ROHM : SOP8

(8) (7) (6) (5) (8) (7) (6) (5)

(4)
(1) (2) (3) (4)

∗ (1)
(2)
Source
Source
(3) Source
(4) Gate
(5) Drain
(1) (2) (3) (6) Drain
(7) Drain
∗Gate Protection Diode. (8) Drain

∗ A protection diode is included between the gate

and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous ID 7 A
Drain Current
Pulsed IDP∗ 28 A

Reverse Drain Continuous IDR 7 A

Current Pulsed IDRP∗ 28 A
Source Current Continuous Is 1.3 A
Isp∗
(Body Diode) Pulsed 5.2 A
Total Power Dissipation (Tc=25°C) PD 2 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg −55∼+150 ˚C
∗ Pw≤10ms, Duty cycle≤1%
 RK9410
Transistors

zThermal resistance (Ta=25°C)

Parameter Symbol Limits Unit
Channel to Ambient Rth(ch-A) 62.5 ˚C / W

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate-Source Leakage IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-Source Breakdown Voltage V (BR) DSS 30 − − V ID=1mA, VGS=0V
Zero Gate Voltage Drain Current IDSS − − 1 µA VDS=30V, VGS=0V
Gate Threshold Voltage VGS (th) 1.0 − 2.5 V VDS=10V, ID=1mA
− 18 23 ID=7A, VGS=10V
Static Drain-Source On-State
RDS (on) − 28 37 mΩ ID=7A, VGS=4.5V
Resistance
− 33 43 ID=7A, VGS=4V
Forward Transfer Admittance l Yfs l∗ 5 − − S ID=7A, VDS=10V
Input Capacitance Ciss − 710 − pF VDS=10V
Output Capacitance Coss − 400 − pF VGS=0V
Reverse Transfer Capacitance Crss − 200 − pF f=1MHz
Turn-On Delay Time td (on)∗ − 12 − ns ID=3.5A, VDD 15V
Rise Time tr∗ − 43 − ns VGS=10V
Turn-Off Delay Time td (off)∗ − 48 − ns RL=4.3Ω
Fall Time tf∗ − 30 − ns RGS=10Ω
Total Gate Charge Qg∗ − 20.5 41 nC VDD=15V
Gate-Source Charge Qgs∗ − 3.3 − nC VGS=10V
Gate-Drain Charge Qgd∗ − 5.2 − nC ID=7A
∗ Pulsed

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward Voltage VSD∗ − − 1.5 V Is=5.2A, VGS=0V
Reverse Recovery Time trr∗ − 155 − ns IDR=5.2A, VGS=0V
Reverse Recovery Charge Qrr∗ − 145 − nC di/dt=100A/µs
∗ Pulsed
 RK9410
Transistors

zElectrical characteristic curves

10 100 1

FORWARD TRANSFER ADMITTANCE : I YfS I (S)

VDS=0V VDS=10V VGS=10V

ON-STATE RESISTANCE : RDS (on) (Ω)

REVERSE DREIN CURRENT : IDR (A)

Pulsed Pulsed Pulsed

Ta=125˚C
75˚C 10 Ta=−25˚C
25˚C 25˚C
1 −25˚C 0.1 Ta=125˚C

STATIC DRAIN-SOURCE
75˚C 75˚C
125˚C 25˚C
−25˚C
1

0.1 0.01
0.1

0.01 0.01 0.001

0.0 0.5 1.0 1.5 0.01 0.1 1 10 0.1 1 10

SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A)

Fig.1 Reverse Drein Current Fig.2 Forward Transfer Admittance Fig.3 Static Drain-Source
vs. Source - Drain Voltage vs. Drain Current On-State Resistance
vs. Drain Current ( )

1 0.050 0.100
VGS=4V VGS=10V Ta=25˚C
ON-STATE RESISTANCE : RDS (on) (Ω)

ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed 0.045 ID=7A Pulsed

ON-STATE RESISTANCE : RDS (on) (Ω)

Pulsed
Ta=125˚C 0.040 0.080
75˚C
0.1 25˚C 0.035
STATIC DRAIN-SOURCE

−25˚C
0.030 STATIC DRAIN-SOURCE 0.060 ID = 7A
STATIC DRAIN-SOURCE

3.5A
0.025

0.020 0.040
0.01
0.015
0.010 0.020
0.005
0.001 0.000 0.000
0.1 1 10 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20
DRAIN CURRENT : I D (A) CHANNEL TEMPERATURE : Tch (˚C) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static Drain-Source Fig.5 Static Drain-Source Fig.6 Static Drain-Source

On-State Resistance On-State Resistance vs. On-State Resistance vs.
vs. Drain Current ( ) Channel Temperature Gate-Source Voltage

4.000 10000 30 15
GATE THRESHOLD VOLTAGE : VGS (th) (V)

VDS=10V Ta=25˚C
ID=1mA f=1MHz
DRAIN-SOURCE VOLTAGE : VDS (V)

GATE-SOURCE VOLTAGE : VGS (V)

Pulsed VGS=0V
Pulsed 25
CAPACITANCE : C (pF)

VGS
3.000
1000 20 10
Ciss VDS
2.000 15
Coss

100 Crss 10 5
1.000
Ta=25˚C
5 VDD=24V
ID=7A
0.000 10 Pulsed
0 0
−50 −25 0 25 50 75 100 125 150 0.1 1 10 100 0 8 16 24 32
CHANNEL TEMPERATURE : Tch (˚C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC)

Fig.7 Gate Threshold Voltage Fig.8 Typical Capacitance Fig.9 Dynamic Input Characteristics
vs. Channel Temperature vs. Drain-Source Voltage
 RK9410
Transistors

1000 20
Ta=25˚C
VGS=4V
VDD=15V 18
VGS=10V
RG=10Ω 16
SWITCHING TIME : t (ns)

DRAIN CURRENT : ID (A)

VGS=5V
Pulsed VGS=4.5V
14
100 tr
VGS=3.5V
td (off) 12

tf 10

8
10 td (on)
6
VGS=3V
4

2
VGS=2.5V
1 0
0.1 1 10 0 2 4 6 8 10
DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics

10
NORMALIZED TRANSIENT : r (t)

1 D=1
D=0.5
THERMAL RESISTANCE

D=0.2
0.1 D=0.1
D=0.05
Tc=25˚C
D=0.02 θth (ch-c) (t)=r (t) θth (ch-c)
0.01 D=0.01 θth (ch-c)=6.25˚C / W
D=Single
PW
D=PW
T T
0.001
10µ 100µ 1m 10m 100m 1 10 100

PULSE WIDTH : PW (s)

Fig.12 Normalized Transient Thermal

Resistance vs. Pulse Width