2/21/2019 Advance power electronics and Control - - Unit 2 - Week 1

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Unit 2 - Week 1
Register for
Certification exam Assignment 1
The due date for submitting this assignment has passed. Due on 2019-02-13, 23:59 IST.
Course
outline Assignment submitted on 2019-02-04, 14:00 IST

How to access 1) Which is the Power semiconductor device having easy drive features? 1 point
the portal

Week 1 GTO
MOSFET
Introduction
SCR
Basic Concept IGBT
of Switches
Yes, the answer is correct.
Device Physics I
Score: 1
Device Physics Accepted Answers:
II
MOSFET
Device Physics
2) Which is the Power semiconductor device having highest voltage / current ratings? 1 point
III

Quiz :
Assignment 1 IGBT
Solution for MOSFET
Assignment 1 SCR
MCT
Week 2
Yes, the answer is correct.
Week 3 Score: 1
Accepted Answers:
Week 4
SCR

DOWNLOAD 3) Which is the Power semiconductor device having Gate-turn off capability with regenerative 1 point
VIDEOS features?

GTO
MOSFET
SIT
SCR

Yes, the answer is correct.

Score: 1

https://onlinecourses.nptel.ac.in/noc19_ee15/unit?unit=7&assessment=11 1/4
2/21/2019 Advance power electronics and Control - - Unit 2 - Week 1
Accepted Answers:
GTO

4) Which is the Power semiconductor device having easy drive and high power handling 1 point
capability?

GTO
Power Diode
SCR
IGBT

Yes, the answer is correct.

Score: 1
Accepted Answers:
IGBT

5) For a given forward current the reverse recovery time of a Power diode ______________ 1 point
with the rate of decrease of the forward current.

is constant
increases
decreases
overshoots

No, the answer is incorrect.

Score: 0
Accepted Answers:
decreases

6) BJT has ______________ switching loss and______________ conduction loss. 1 point

lower, lower
higher, lower
lower, higher
higher, higher

Yes, the answer is correct.

Score: 1
Accepted Answers:
higher, lower

7) In case of Thyristor which expression is correct? 1 point

Latching current > Holding current

Latching current < Holding current
Latching current = Holding current
None of the above.

Yes, the answer is correct.

Score: 1
Accepted Answers:
Latching current > Holding current

8) The forward i-v characteristics of a GTO is similar to that of a ______________. 1 point

MOSFET
Power Diode

https://onlinecourses.nptel.ac.in/noc19_ee15/unit?unit=7&assessment=11 2/4
2/21/2019 Advance power electronics and Control - - Unit 2 - Week 1

IGBT
SCR

Yes, the answer is correct.

Score: 1
Accepted Answers:
SCR

9) A power diode with small softness factor (S-factor) has 1 point

small oscillatory over voltages

large oscillatory over voltages
large peak reverse current
small peak reverse current

Yes, the answer is correct.

Score: 1
Accepted Answers:
large oscillatory over voltages

10)Latching current for an SCR is 100 mA, DC source of 200 V is also connected from the SCR 1 point
to the L load. Compute the minimum width of the gate pulse required to turn on the device. Take L = 0.2
H.

50 μsec
150 μsec
100 μsec
200 μsec

Yes, the answer is correct.

Score: 1
Accepted Answers:
100 μsec

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