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ASG303

DC-2500 MHz SiGe HBT Amplifier


Features Description
·SiGe Technology The ASG303 is designed for high linearity, high
·19 dB Gain at 900 MHz gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
·+19 dBm P1dB 303
and transmitter of wireless and wireline
·+40 dBm Output IP3 telecommunication systems. The product is
·2.9 dB Noise Figure manufactured using a state-of-the-art SiGe HBT
·MTTF > 100 Years process of the company's own, making it cost- Package Style: SOT-89
effective and highly reliable. The amplifiers are
·Single +5 V Supply
available in a low cost SOT-89 package
·SOT-89 Surface Mount Package completing stringent DC and RF tests.

Specifications 1)
Parameters Units Min. Typ. Max.
Applications
Frequency Range MHz 250 - 2500
Gain dB 18 19 ·CDMA,GSM,W-CDMA,PCS
Input VSWR - 1.5 ·Gain Block
Output VSWR - 1.5 ·CATV Amplifier
2)
Output IP3 dBm 38 40 ·IF Amplifier
Noise Figure dB 2.9 ·Bluetooth Amplifier
Output P1dB dBm 19 ·Wireless LAN Amplifier
Supply Current mA 55
Supply Voltage V 5
3)
Thermal Resistance, Rth °C/W 78.2
1) Measurement conditions are as follows: T = 25°C, VCC = 5 V, Freq. = 900 MHz, 50 ohm system.
2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
3) The thermal resistance was determined at a DC power of 0.270 W (VCC=5 V, IC=54 mA) with RF signal and a lead temperature
of 28.8 °C

Absolute Maximum Ratings


Parameters Rating Remarks More Information
Operating Case Temperature -40 to +85°C
Website: www.asb.co.kr
Storage Temperature -40 to +150°C E-mail: sales@asb.co.kr
Supply Voltage 8V
Tel: (82) 42-528-7220
Operating Junction Temperature 150°C Fax: (82) 42-528-7222
Input RF Power (continuous) +6 dB above Input P1dB ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
Application Note

Ordering Information
Part Number Description
High linearity medium power amplifier
ASG303
(Available in tape and reel)
EB-ASG303-900 Fully assembled evaluation kit (900 MHz)
EB-ASG303-2000 Fully assembled evaluation kit (2000 MHz)

1/6 ww.ASB.co.kr March 2004


ASG303

Outline Drawing

(Unit: mm)

3
a

2 2

Pin Description

Function Pin No.


Input 1
Ground 2
Output 3

Land Pattern Mounting Configuration

(Unit: mm)

Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.

2/6 ww.ASB.co.kr March 2004


ASG303
Application Circuit: 900 MHz
Schematic
Typical Performance
C5= C6=
Frequency 900 MHz Vcc=5V
100 pF 1 µF
Magnitude S21 19 dB
Magnitude S11 -16 dB R1=11 kΩ

Magnitude S22 -16 dB


C4=0.1 µF L2=22 nH
Output P1dB 19 dBm L1=390 nH
1)
Output IP3 40 dBm RF IN C1=6 pF RF OUT
Noise Figure 2.8 dB 50 Ω ASG303
Supply Voltage 5V 7 mm C3=100pF
Current 55 mA
L3=33nH C2=5 pF
1) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1MHz

2
Gain vs. Temperature Board Layout (FR4, 40x40 mm , 0.8T)

24

22
Frequency = 900MHz
20

18

16

14

12

10
-40 -20 0 20 40 60 80 100

S-parameters

0 0

-5 -5 85ΒC
25ΒC
-10 -10 -40ΒC

-15 -15

-20 -20

-25 -25
85ΒC
25ΒC -30
-30
-40ΒC
-35 -35

600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200

3/6 ww.ASB.co.kr March 2004


ASG303
30 0

-5
25
85ΒC
25ΒC
-10
-40ΒC
20
-15

85ΒC
15 -20 25ΒC
-40ΒC
-25
10

-30

5
-35

600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200

OP1 vs. Frequency

28

26 85ΒC
25ΒC
24 -40ΒC
22

20

18

16

14

12

800 850 900 950 1000

Output IP3 vs. Frequency Output IP3 vs. Tone Power


(Pout per tone = 8dBm) (Frequency = 900MHz)

55 55

50 50
85ΒC 85ΒC
25ΒC 25ΒC
-40ΒC -40ΒC
45 45

40 40

35 35

30 30

800 850 900 950 1000 4 5 6 7 8 9 10 11 12

4/6 ww.ASB.co.kr March 2004


Application Circuit: 2000 MHz

Typical Performance Schematic

Frequency 2000 MHz C6= C7=


Vcc=5 V
100 pF 1 µF
Magnitude S21 12.5 dB
Magnitude S11 -24 dB R1=11 kΩ

Magnitude S22 -23 dB


C5=0.1 µF L2=10 nH
Output P1dB 19 dBm L1=100 nH
1)
Output IP3 40 dBm
RF IN C1=1 pF RF OUT
Noise Figure 3.3 dB
50 Ω ASG303
Supply Voltage 5V C3=100pF
3 mm
Current 55 mA
C4=0.5 pF
L3=22nH
1) OIP3 is measured with two tones at an output power of +8 dBm/tone
separated by 1 MHz. C2=0.75 pF

Gain vs. Temperature Board Layout (FR4, 40x40 mm2, 0.8T)

20

18
Frequency = 2GHz
16

14

12

10

8
-40 -20 0 20 40 60 80 100

S-parameters

0 0

-10 -10

-20 -20

-30 -30
85ΒC
25ΒC
85ΒC
-40 -40ΒC -40
25ΒC
-40ΒC
-50 -50

1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300

5/6 ww.ASB.co.kr March 2004


ASG303
30 0

25
85ΒC
25ΒC -10
-40ΒC
20 -20

15
-30

10 85ΒC
-40 25ΒC
-40ΒC
5
-50

1700 1800 1900 2000 2100 2200 2300 1700 1800 1900 2000 2100 2200 2300

OP1 vs. Frequency

26

85ΒC
24
25ΒC
-40ΒC
22

20

18

16

14

12

1800 1850 1900 1950 2000 2050 2100

Output IP3 vs. Frequency Output IP3 vs. Tone Power


(Pout per tone = 8dBm) (Frequency = 2000MHz)

55 55

85ΒC 85ΒC
50 50
25ΒC
25ΒC
-40ΒC -40ΒC
45 45

40 40

35 35

30 30

25 25

1800 1850 1900 1950 2000 2050 2100 5 6 7 8 9 10 11 12 13

6/6 ww.ASB.co.kr March 2004


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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