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2. What is a FET?
A field effect (FET) is a three terminal semiconductor device in which current conduction takes
place by only one type of carriers (either holes or electron) and is controlled by an electric field.
the relationship is quadratic: where VP is the pinch-off voltage and IDSS is the saturation drain
current for VGS = 0 (i.e. gate shorted to source).
16. List
ist the advanta
ntages of FET ET.
• Input
In impedan
dance is veryy hhigh. This allows
all high degree
de of isola
solation betweeeen the input
ut &
ou
output circuit.
uit.
• Current
Cu carrie
riers are nott cr
crossing thee junctions
ju hen
ence noise is highly reducuced.
• It has a negat
gative temperat
erature Co-effic
fficient of resis
sistance. This
is avoids thee thermal
th
ru
runaway.
• It has a smalle
aller size, longe
nger life highh eefficiency.
17. Wha
hat are the main
m drawba
backs of FET
ET?
The
he m
main disadv
dvantage of th
the FET is its relatively sm
small gain band
ban width product
pro in
comparis
arison with that
tha which can
an be obtained
ed with a conv
nventional tran
transistor.
18. Dra
raw the symb
mbol of JFET.
T.
n-chann
annel FET P-C
Channel FET
ET
19. Defin
efine drain resistance
res and Transcond
onductance.
20. Wri
rite Shockley
ley’s equation
ion.
21. Wha
hat are thee precautions
p ns tto be taken
en when hand
ndling MOSF
SFET?
Because
se tthe glass like silicon oxide
oxi layer belo
elow the gate
te iis do thin,, it can be pierc
ierced by tooo much
m
voltagee or even static
tic electricity. To avoid da
damage to the
he device, MO OSFETs are re usually
u shipp
ipped
with thee leads
l shorted
ted together.
22. Wha
hat are the differences
di s be
between BJT
JT and JFET?
T?
Parameter
eter BJT FET
Terminals
als Emitter,
ter, Base andd C
Collector Source
rce, Gate and
nd Drain
D
Type off ddevice Current
ent controlledd B
Bi-polar dev
evice Voltag
ltage controlled
lled Uni-polar
lar device
Input Res
esistance Low com
compared too FFET High
To Contro
ntrol the signal
nal BJT use
uses junctions
ns A JFE
FET uses a cha
channel
Voltagee ggain High lower
er voltage gain
ain
Outputt cu
current
28. Why the input impedance in FET is very high in comparison with BJT?
JFET have very high input impedance because of the reverse biased Gate-Source pn-junction.
29. Why is FET preferred as a Buffer Amplifier?
FET is used as a buffer in measuring instruments, receivers since it has high input
impedance and low output impedance.
30. In a n-channel JFET, IDSS = 20 m A and VP = -6 V. Calculate the drain current
when VGS = -3 V.
=20x10-3 x (1-(3/6))2
= 5mA
31. Determine the transconductance of a JFET if its amplification factor is 96 and
drain resistance is 32 KΩ.
µ = gm* rd
µ = 96 and rd = 32X10^3
gm = 96/32X10^3
= 2.66mS
Parameter CG CD CS