55NF06 ®

55NF06 Pb
Pb Free Plating Product
N-CHANNEL POWER MOSFET TRANSISTOR

50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET
12 TO-251/IPAK
3
„ DESCRIPTION
ThinkiSemi 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt. 12
3 TO-220/TO-220F
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
„ FEATURES
* RDS(ON) = 23m@VGS = 10 V 12
* Ultra low gate charge ( typical 30 nC ) 3 TO-252/DPAK
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
„ SYMBOL „ APPLICATION 2.Drain

U55NF06 TO-251/IPAK Auotmobile Convert System

P55NF06 TO-220 Networking DC-DC Power System
F55NF06 TO-220F
D55NF06 TO-252/DPAK Power Supply etc..
1.Gate

„ ABSOLUTE MAXIMUM RATINGS 3.Source

PARAMETER SYMBOL RATINGS UNIT

Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
TC = 25°C 50 A
Continuous Drain Current ID
TC = 100°C 35 A
Pulsed Drain Current (Note 2) IDM 200 A
Single Pulsed (Note 3) EAS 480 mJ
Avalanche Energy
Repetitive (Note 2) EAR 13 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns
TO-220 120 W
Power Dissipation (TC=25°C) TO-251 PD 90 W
TO-252 136 W
Junction Temperature TJ +150 °C
Operation and Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20, Starting TJ=25°C
4. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25°C
Rev.02 Page 1/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 55NF06 ®

„ THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220 62 °C/W
Junction to Ambient TO-251 JA 62 °C/W
TO-252 100 °C/W
TO-220 1.24 °C/W
Junction to Case  TO-251 JC 1.28 °C/W
TO-252 1.1 °C/W

„ ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 A 60 V
Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 A
Forward VGS = 20V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -20V, VDS = 0 V -100 nA
Breakdown Voltage Temperature ID = 250 A,
ϦBVDSS/ƸTJ 0.07 V/°C
Coefficient Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 25 A 18 23 m
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 900 1220 pF
VGS = 0 V, VDS = 25 V
Output Capacitance COSS 430 550 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 80 100 pF

„ ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 40 60 ns
Turn-On Rise Time tR VDD = 30V, ID =25 A, 100 200 ns
Turn-Off Delay Time tD(OFF) R G = 50 (Note 1, 2) 90 180 ns
Turn-Off Fall Time tF 80 160 ns
Total Gate Charge QG 30 40 nC
VDS = 48V, VGS = 10 V
Gate-Source Charge QGS 9.6 nC
ID = 50A (Note 1, 2)
Gate-Drain Charge QGD 10 nC
DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V 1.5 V
Maximum Continuous Drain-Source Diode
IS 50 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 200 A
Forward Current
Reverse Recovery Time tRR IS = 50A, VGS = 0 V 54 ns
Reverse Recovery Charge QRR dIF / dt = 100 A/s 81 C
Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2%
2. Essentially independent of operating temperature

Rev.02 Page 2/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 55NF06 ®

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop 

Fig. 1B Peak Diode Recovery dv/dt Waveforms

Rev.02 Page 3/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 55NF06 ®

„ TEST CIRCUITS AND WAVEFORMS (Cont.)




Fig. 2A Switching Test Circuit ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ ʳ Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS
IAS

RG
VDD
ID(t)
VDS(t)
VDD
10V D.U.T.
tp
tp Time


Fig. 4A Unclamped Inductive Switching Test Circuit ʳ ʳ ʳ Fig. 4B Unclamped Inductive Switching Waveforms

Rev.02 Page 4/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 55NF06 ®

„ TYPICAL CHARACTERISTICS

Drain Current, ID (A)

Drain Current, ID (A)




On-Resistance Variation vs. On State Current vs.
Drain Current and Gate Voltage Allowable Case Temperature
2.5
102
2.0

1.5 150°C

101 25°C
1.0 VGS=10V

0.5 VGS=20V *Note:

1. VGS=0V
2. 250μs Test
0.0 100
0 20 40 60 80 100 120 140160180 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, ID (A) Source-Drain Voltage, VSD (V)




Rev.02 Page 5/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 55NF06 ®

„ TYPICAL CHARACTERISTICS(Cont.)

Breakdown Voltage Variation vs. On-Resistance Variation vs.
Junction Temperature Junction Temperature

Drain-Source On-Resistance, RDS(ON),

1.2 3.0
Drain-Source Breakdown Voltage,

2.5
BVDSS(Normalized)

1.1

(Normalized)
2.0

1.0 1.5

1.0
0.9 *Note: *Note:
0.5 1. VGS=10V
1. VGS=0V
2. ID=250μA 2. ID=25A
0.8 0.0
-100 -50 0 50 100 150 200 -50 0 50 100 150
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)



Maximum Drain Current vs.
Maximum Safe Operating
Case Temperature
103 Operation in This 50
Area by RDS (on)
40
Drain Current, ID (A)
Drain Current , ID,(A)

100μs
102
1ms
30
10ms
1
10
10ms
20
*Note:
100
1. Tc=25°C 10
2. TJ=150°C
10-1 3. Single Pulse 0
10-1 100 101 102 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (°C)



Thermal Response, ZJC (t)




Rev.02 Page 6/6

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/