LNF-LNR4_8C

4-8 GHz Low Noise Amplifier

Rev: Feb 2017

Absolute maximum ratings

Parameter Min Max

Vds -0.5 V 2V
Ids 150 mA
Vgs -20 V +20 V
RF Input drive level 0 dBm
DC voltage on RF -30V 30V
input and output

Product features

• RF bandwidth: 4-8 GHz Typical RF Characteristics

• Noise Temperature: 32 K typical
• Noise Figure: 0.45 dB typical Parameter Test Condition Value Unit
• Gain: 41 dB Gain 4-8 GHz 41 dB
• DC-power: Vd=1.25 V, Id=45 mA Noise 4-8 GHz 32 K
Temperature
• One gate and one drain supply only
IRL 4-8 GHz 17 dB
• RF-connectors: female SMA
ORL 4-8 GHz 17 dB
• DC-connector: 9-pin female Nano-D
P1dB 4-8 GHz 0 dBm
OIP3 4-8 GHz ≈9 dBm
Product description

LNF-LNR4_8C is an ultra low noise amplifier Typical DC Characteristics

operating in the 4-8 GHz frequency range. The
LNA is packaged in a coaxial module using Parameter Value Unit
industry standard SMA and Nano-D Vds 1.35 V
connectors. The lightweight gold plated Ids 45 mA
aluminum module measures 25.66*20.0*7.8 Vgs 01 V
mm. InP HEMTs ensures lowest noise and Igs 0 µA
power dissipation in the industry. Pdc 61 mW

1
Will vary slightly from unit to
unit. Adjust to give Ids=45mA

Low Noise Factory • www.lownoisefactory.com • info@lownoisefactory.com

 LNF-LNR4_8C
4-8 GHz Low Noise Amplifier

Rev: Feb 2017

Measured typical data, Tamb=296 K
Gain [dB]
Gain and Noise Noise [K]
50 100

45 90

40 80

35 70

Noise [Kelvin]
30 60
Gain [dB]

25 50

20 40

15 30

10 20

5 10

0 0
2 3 4 5 6 7 8 9 10
Frequency [GHz]

S11 [dB]

0
S11 and S22 S22 [dB]

-5

-10
S11, S22 [dB]

-15

-20

-25

-30
2 3 4 5 6 7 8 9 10
Frequency [GHz]

Low Noise Factory • www.lownoisefactory.com • info@lownoisefactory.com

 LNF-LNR4_8C
4-8 GHz Low Noise Amplifier

Rev: Feb 2017

Drawings
20.00

6.47
25.66
3.52
7.80

6H
-
5

8.66 8.00
0.4
.5x
M2
3x
15.40
2.00

6.66

Dimensions are in millimeters

Low Noise Factory • www.lownoisefactory.com • info@lownoisefactory.com