19-0253; Rev 1; 8/94

NUAL
KIT MA
V A L U ATION A S H EET
E T
WS DA
FOLLO
+12V, 30mA Flash Memory
Programming Supply
_______________General Description ____________________________Features

MAX662A
The MAX662A is a regulated +12V, 30mA-output, charge- ♦ Regulated +12V ±5% Output Voltage
pump DC-DC converter. It provides the necessary +12V
±5% output to program byte-wide flash memories, and ♦ 4.5V to 5.5V Supply Voltage Range
requires no inductors to deliver a guaranteed 30mA out- ♦ Fits in 0.1in2
put from inputs as low as 4.75V. It fits into less than 0.1in2
of board space. The MAX662A is a pin-compatible ♦ Guaranteed 30mA Output
upgrade to the MAX662, and is recommended for new ♦ No Inductor—Uses Only 4 Capacitors
designs. The MAX662A offers lower quiescent and shut-
down currents, and guarantees the output current over all ♦ 185µA Quiescent Current
temperature ranges. ♦ Logic-Controlled 0.5µA Shutdown
The MAX662A is the first charge-pump boost converter to
♦ 8-Pin Narrow SO and DIP Packages
provide a regulated +12V output. It requires only a few
inexpensive capacitors, and the entire circuit is complete-
ly surface-mountable.
A logic-controlled shutdown pin that interfaces directly ______________Ordering Information
with microprocessors reduces the supply current to only
0.5µA. The MAX662A comes in 8-pin narrow SO and DIP PART TEMP. RANGE PIN-PACKAGE
packages. MAX662ACPA 0°C to +70°C 8 Plastic DIP
For higher-current flash memory programming solutions, MAX662ACSA 0°C to +70°C 8 SO
refer to the data sheets for the MAX734 (120mA output MAX662AC/D 0°C to +70°C Dice*
current, guaranteed) and MAX732 (200mA output cur- MAX662AEPA -40°C to +85°C 8 Plastic DIP
rent, guaranteed) PWM, switch-mode DC-DC converters. MAX662AESA -40°C to +85°C 8 SO
Or, refer to the MAX761 data sheet for a 150mA, PFM MAX662AMJA -55°C to +125°C 8 CERDIP**
switch-mode DC-DC converter that operates from inputs
as low as 2V. * Dice are tested at TA = +25°C.
** Contact factory for availability and processing to MIL-STD-883.
________________________Applications
+12V Flash Memory Programming Supplies
Compact +12V Op-Amp Supplies
Switching MOSFETs in Low-Voltage Systems
Dual-Output +12V and +20V Supplies

__________Typical Operating Circuit __________________Pin Configuration

INPUT
4.75V TO 5.5V TOP VIEW

4.7µF OUTPUT
12V ±5%
VCC 30mA C1- 1 8 SHDN
SHDN VOUT Vpp
C1+ 2 7 GND
FLASH
MAX662A MEMORY MAX662A VOUT
C2- 3 6
0.22µF C1+ C2- 0.22µF
4.7µF C2+ 4 5 VCC

C1- C2+
GND DIP/SO

________________________________________________________________ Maxim Integrated Products 1

Call toll free 1-800-998-8800 for free samples or literature.

 +12V, 30mA Flash Memory
Programming Supply
ABSOLUTE MAXIMUM RATINGS
MAX662A

VCC to GND ................................................................-0.3V to 6V Operating Temperature Ranges

SHDN..........................................................-0.3V to (VCC + 0.3V) MAX662AC_A .....................................................0°C to +70°C
IOUT Continuous..................................................................50mA MAX662AE_A ..................................................-40°C to +85°C
Continuous Power Dissipation (TA = +70°C) MAX662AMJA................................................-55°C to +125°C
Plastic DIP (derate 9.09mW/°C above +70°C) ............727mW Storage Temperature Range .............................-65°C to +160°C
SO (derate 5.88mW/°C above +70°C) .........................471mW Lead Temperature (soldering, 10sec) .............................+300°C
CERDIP (derate 8.00mW/°C above +70°C) .................640mW

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS
(Circuit of Figure 3a, VCC = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
0mA ≤ IOUT ≤ 30mA, 11.4 12 12.6
VCC = 4.75V to 5.5V
MAX662AC/E
0mA ≤ IOUT ≤ 20mA 11.4 12 12.6
Output Voltage VOUT V
0mA ≤ IOUT ≤ 24mA, 11.4 12 12.6
VCC = 4.75V to 5.5V
MAX662AM
0mA ≤ IOUT ≤ 16mA 11.4 12 12.6
Supply Current ICC No load, VSHDN = 0V 185 500 µA
Shutdown Current No load, VSHDN = VCC 0.5 10 µA
Oscillator Frequency fOSC VCC = 5V, IOUT = 30mA 500 kHz
Power Efficiency VCC = 5V, IOUT = 30mA 76 %
VCC = VSHDN = 5V, MAX662AC/E 1 2
VCC-to-VOUT Switch Impedance RSW kΩ
IOUT = 30mA MAX662AM 1 2.5
VIH 2.4
Shutdown Input Threshold V
VIL 0.4
VCC = 5V, VSHDN = 0V -50 -15 -5
SHDN Pin Current µA
VCC = VSHDN = 5V 0

__________________________________________Typical Operating Characteristics

(Circuit of Figure 3a, TA = +25°C, unless otherwise noted.)

SUPPLY CURRENT vs. SUPPLY VOLTAGE OUTPUT VOLTAGE vs. OUTPUT CURRENT EFFICIENCY vs. LOAD CURRENT
300 12.6 100
MAX662A-01

MAX662A-02

MAX662A-03

CONTINUOUS OUTPUT CURRENT MUST

280 12.4 NOT EXCEED 50mA ABS MAX LIMIT. 90
TA = -55°C
260 12.2 INTERMITTENT PEAK CURRENTS MAY VCC = 5.5V
SUPPLY CURRENT (µA)

BE HIGHER.
OUTPUT VOLTAGE (V)

240 12.0 80
EFFICIENCY (%)

220 11.8 70
VCC = 4.5V
200 TA = 0°C 11.6 VCC = 4.5V
VCC = 4.75V 60
180 11.4 VCC = 4.75V
TA = +25°C
VCC = 5.0V VCC = 5.0V
160 11.2 50
VCC = 5.5V CONTINUOUS OUTPUT CURRENT
140 TA = +125°C 11.0
40 MUST NOT EXCEED 50mA ABS MAX
120 10.8 LIMIT. INTERMITTENT PEAK
CURRENTS MAY BE HIGHER.
100 10.6 30
4.50 4.75 5.00 5.25 5.50 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
SUPPLY VOLTAGE (V) OUTPUT CURRENT (mA) LOAD CURRENT (mA)

2 _______________________________________________________________________________________
 +12V, 30mA Flash Memory
Programming Supply
_____________________________Typical Operating Characteristics (continued)

MAX662A
(Circuit of Figure 3a, TA = +25°C, unless otherwise noted.)

LOAD-TRANSIENT RESPONSE LINE-TRANSIENT RESPONSE

A
A

0mA

0V

B B
0V

1ms/div 1ms/div
A: OUTPUT CURRENT, 20mA/div, IOUT = 0mA to 30mA A: SUPPLY VOLTAGE, 2V/div, VCC = 4.5V to 5.5V, IOUT = 30mA
B: OUTPUT VOLTAGE RIPPLE, 100mV/div, VCC = 5.0V B: OUTPUT VOLTAGE RIPPLE, 200mV/div

_____________________Pin Description VCC

C4
4.7µF
PIN NAME FUNCTION VCC

Negative terminal for the first charge-

1 C1- S1
pump capacitor C2+ C3*
0.1µF
Positive terminal for the first charge-
2 C1+ S2
pump capacitor 0.22µF +12V
VOUT
C5
Negative terminal for the second C2- S1 R2 4.7µF
3 C2- ERROR
charge-pump capacitor
AMP
Positive terminal for the second
4 C2+
charge-pump capacitor R1
C1+ S2
5 VCC Supply Voltage VREF

S1
+12V Output Voltage. VOUT = VCC 0.22µF SHDN
6 VOUT
when in shutdown mode.
C1- S2
7 GND Ground MAX662A
S1
Active-high CMOS-logic level OSCILLATOR
Shutdown Input. SHDN is internally
pulled up to VCC. Connect to GND for
8 SHDN
normal operation. In shutdown mode,
the charge pumps are turned off and GND
VOUT = VCC.

SWITCH CLOSURES SHOWN FOR CHARGE PUMP IN THE TRANSFER MODE

* C3 NOT REQUIRED. FOR MAX662 ONLY.

Figure 1. Block Diagram

_______________________________________________________________________________________ 3
 +12V, 30mA Flash Memory
Programming Supply
_______________Detailed Description
MAX662A
Operating Principle
The MAX662A provides a regulated 12V output voltage
at 30mA from a 5V ±5% power supply, making it ideal
for flash EEPROM programming applications. It uses
internal charge pumps and external capacitors to gen-
erate +12V, eliminating inductors. Regulation is provid-
ed by a pulse-skipping scheme that monitors the
output voltage level and turns on the charge pumps
when the output voltage begins to droop.
Figure 1 shows a simplified block diagram of the
MAX662A. When the S1 switches are closed and the
S2 switches are open, capacitors C1 and C2 are
charged up to VCC. The S1 switches are then opened
and the S2 switches are closed so that capacitors C1
and C2 are connected in series between V CC and
VOUT. This performs a voltage tripling function. A pulse-
skipping feedback scheme adjusts the output voltage
to 12V ±5%. The efficiency of the MAX662A with VCC =
5V and I OUT = 30mA is typically 76%. See the
Efficiency vs. Load Current graph in the Typical
Operating Characteristics.
During one oscillator cycle, energy is transferred from
the charge-pump capacitors to the output filter capaci-
tor and the load. The number of cycles within a given
time frame increases as the load current increases or
as the input supply voltage decreases. In the limiting
case, the charge pumps operate continuously, and the
oscillator frequency is nominally 500kHz.
5V
SHDN
0V
12V
VOUT
5V
200µs/div
CIRCUIT OF FIGURE 3, VCC = 5V, IOUT = 200µA
Figure 2. MAX662A Exiting Shutdown
4 _______________________________________________________________________________________
Shutdown Mode
The MAX662A enters shutdown mode when SHDN is a
logic high. SHDN is a TTL/CMOS-compatible input sig-
nal that is internally pulled up to V CC. In shutdown
mode, the charge-pump switching action is halted and
VIN is connected to VOUT through a 1kΩ switch. When
entering shutdown, VOUT declines to VCC in typically
13ms. Connect SHDN to ground for normal operation.
When VCC = 5V, it takes typically 400µs for the output
to reach 12V after SHDN goes low (Figure 2).
__________Applications Information
Compatibility with MAX662
The MAX662A is a 100%-compatible upgrade of the
MAX662. The MAX662A does not require capacitor C3,
although its presence does not affect performance.
Capacitor Selection
Charge-Pump Capacitors, C1 and C2
The capacitance values of the charge-pump capacitors
C1 and C2 are critical. Use ceramic or tantalum capaci-
tors in the 0.22µF to 1.0µF range. For applications requir-
ing operation over extended and/or military temperature
ranges, use 1.0µF tantalum capacitors for C1 and C2
(Figure 3b).
Input and Output Capacitors, C4 and C5
The type of input bypass capacitor (C4) and output filter
capacitor (C5) affects performance. Tantalums, ceramics
or aluminum electrolytics are suggested. For smallest size,
use Sprague 595D475X9016A7 surface-mount capacitors,
which are 3.51mm x 1.81mm. For lowest ripple, use low-
ESR through-hole ceramic or tantalum capacitors. For low-
est cost, use aluminum electrolytic or tantalum capacitors.
Figure 3a shows the component values for proper opera-
tion over the commercial temperature range using mini-
mum board space. The input bypass capacitor (C4) and
output filter capacitor (C5) should both be at least 4.7µF
when using Sprague’s miniature 595D series of tantalum
chip capacitors. Figure 3b shows the suggested compo-
nent values for applications over extended and/or mili-
tary temperature ranges.
The values of C4 and C5 can be reduced to 2µF and
1µF, respectively, when using ceramic capacitors. If
using aluminum electrolytics, choose capacitance values
of 10µF or larger for C4 and C5. Note that as V CC
increases above 5V and the output current decreases,
the amount of ripple at VOUT increases due to the slower
oscillator frequency combined with the higher input volt-
age. Increase the input and output bypass capacitance
to reduce output ripple.
Table 1 lists various capacitor suppliers.
 +12V, 30mA Flash Memory
Programming Supply
Table 1. Capacitor Suppliers

MAX662A
Supplier Phone Number Fax Number Capacitor Capacitor Type*

GRM42-6Z5U224M50 0.22µF Ceramic (SM)

Murata Erie (814) 237-1431 (814) 238-0490
RPE123Z5U105M50V 1.0µF Ceramic (TH)

(603) 224-1961 (603) 224-1430 595D475X9016A7 4.7µF Tantalum (SM)

Sprague Electric
(207) 324-4140 (207) 324-7223 595D105X9016A7 1.0µF Tantalum (SM)

*Note: (SM) denotes surface-mount component, (TH) denotes through-hole component.

Layout Considerations
Layout is critical, due to the MAX662A’s high oscillator
frequency. Good layout ensures stability and helps
3 2 maintain the output voltage under heavy loads. For best
C2- C1+
C2 C1 performance, use very short connections to the capaci-
0.22µF MAX662A 0.22µF tors. The order of importance is: C4, C5, C1, C2.
4 1
C2+ C1-
VIN
Flash EEPROM Applications
4.75V TO 5.5V 5
VCC SHDN
8
PROGRAMMING The circuit of Figure 3a is a +12V ±5% 30mA flash
C4 CONTROL EEPROM programming power supply. A microproces-
VOUT 4.7µF DIRECT FROM sor controls the programming voltage via the SHDN
6 7
+12V ±5% VOUT GND µP pin. When SHDN is low, the output voltage (which is
AT 30mA C5
4.7µF connected to the flash memory VPP supply-voltage pin)
rises to +12V to facilitate programming the flash memo-
ry. When SHDN is high, the output voltage is connected
to VIN through an internal 1kΩ resistor.
Figure 3a. Flash EEPROM Programming Power Supply for Paralleling Devices
Commercial Temperature Range Applications Two MAX662As can be placed in parallel to increase
output drive capability. The VCC, VOUT, and GND pins
can be paralleled, reducing pin count. Use a single
bypass capacitor and a single output filter capacitor
with twice the capacitance value if the two devices can
3
C2- C1+
2 be placed close to each other. If the MAX662As cannot
*C2 *C1 be placed close together, use separate bypass and
1.0µF MAX662A 1.0µF output capacitors. The amount of output ripple
4 C2+ 1
C1- observed will determine whether single input bypass
VIN and output filter capacitors can be used. Under certain
5 8
4.75V TO 5.5V VCC SHDN PROGRAMMING conditions, one device may supply the total output cur-
*C4 CONTROL rent. Therefore, regardless of the number of devices in
22µF DIRECT FROM
VOUT 6
VOUT GND
7
µP
parallel, the maximum continuous current must not
+12V ±5% *C5 exceed 50mA.
AT 30mA 22µF
12V and 20V Dual-Output Power Supply
Using the charge-pump voltage-doubler circuit of
*SPRAGUE 595D SERIES OR EQUIVALENT
Figure 4, the MAX662A can produce a +20V supply
from a single +5V supply. Figure 5 shows the current
Figure 3b. Flash EEPROM Programming Power Supply for
Extended and/or Military Temperature Range Applications capability of the +20V supply.

_______________________________________________________________________________________ 5
 +12V, 30mA Flash Memory
Programming Supply
MAX662A

20.0

MAX662AFIG 5
CIRCUIT OF FIGURE 4
3 2 VCC = 4.75V
C2- C1+ TA = +25°C
19.2

20V OUTPUT VOLTAGE (V)

0.22µF 0.22µF
MAX662A WITH +12V OUTPUT
4 1
C2+ C1- UNLOADED
18.4

8
1µF SHDN WITH 34mA LOAD
17.6
7 ON +12V OUTPUT
12V GND
VIN =
1N5818 OUTPUT
20V 6 5 5V ±5% 16.8
VOUT VCC
OUTPUT 1N5818
1µF 1µF 2µF 16.0
0 5 10 15 20 25 30 35 40
20V OUTPUT CURRENT (mA)

Figure 4. +12V and +20V Dual Supply from a +5V Input Figure 5. +20V Supply Output Current Capability

___________________Chip Topography

C2+ C2- C1+

0.086"
(2.184mm)
C1-
V CC
SHDN

V OUT GND
0.086"
(2.184mm)

TRANSISTOR COUNT: 225

SUBSTRATE CONNECTED TO VOUT

6 _______________________________________________________________________________________