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Abstract—Methods of atomicforce and scanning electron microscopy and Xray diffraction and electron
microprobe analysis were used to study metallic cements formed upon the interaction of Cu–In mechano
composites with different contents of indium. It has been established that an increase in the amount of indium
in the mechanocomposite, which represents mainly a solid solution of indium in copper, leads to a decrease
in the sizes of particles of the basic intermetallic compound CuGa2 in the material obtained. After a certain
induction period, indium forms a solid solution with gallium in the form of separate crystallites and nanodi
mensional films on the faces of CuGa2 crystals.
45
46 GRIGOR’EVA et al.
region of excitation, 100 nm. For the investigation of vation of Cu + 12% In system leads to the formation of
the distribution of chemical elements over the surface small particles of the solid solution of indium in cop
and for the detection of the compositional inhomoge per (150–230 nm). The recrystallization of the solid
neity of the surface, images in secondary and in back solution of copper and the formation of grains of more
scattered electrons were obtained; in the latter case, than 15 μm in size are also possible. Upon the
the brightness distribution was determined by the aver mechanical activation of the Cu + 20% In composi
age atomic number Z of the substance in each tion, the particle size decreases to 100–150 nm; the size
microregion. spread decreases as well; the particles can form scaly
The study of the phase composition of the powders aggregates with dimensions on the order of 1–1.5 μm.
after mechanoactivation and of the dynamics of the When studying powders of Cu–In solid solutions,
formation of the products of their interaction with liq the simultaneously obtained torsion and deflection
uid gallium were performed using Xray diffraction. images allowed us to observe specific topographic fea
The Xray diffraction analysis and the semiquanti tures of the surface of “large” crystals of the Cu(In)
tative estimation of the products of interaction was solid solution. Thus, on the faces of Cubased solid
carried out on a D8 Advance Bruker (Germany) dif solution crystals there are revealed local radially ori
fractometer by the powder method in the θ–2θ config ented regions, which supposedly were formed as a
uration in the stepbystep mode with a step of 0.1°. result of the local melting of indium particles upon the
The identification of phases was performed based on a mechanoactivation and due to the collisions of molten
diffraction pattern recorded in CuКα1 radiation (λ = indium droplets with the faces (Fig. 2). Such struc
1.54051 Å). The refinement of the crystallattice tures could not be revealed by other methods because
parameters was carried out by the Rietveld method of the low height of the objects (on the order of 22 nm
using a TOPAS code. The approximation of the pro in the center and 0.5–1.7 nm at the edges). These
files of the peaks was achieved using the pseudoVoigt images can serve as a confirmation for the fact that in
function. the process of mechanical activation there occurs a
local increase in temperature, such that it leads to the
melting of indium (Tm = 156°C) and, therefore, to a
RESULTS AND DISCUSSION chemical interaction of copper with liquid indium.
For studying the interaction of solid and liquid As is known, the decrease in the size of the particles
metals in the multiphase system, we used, as the initial of the precursor powder ensures a large contact surface
solidphase component, the mechanochemically syn between the components of the solid and liquid phases
thesized powders obtained in the Cu + 12% In and and, therefore, shorter diffusion lengths during their
Cu + 20% In (hereinafter, wt %) systems. subsequent interactions with the metallic melts. Since
According to the phase diagram of the Cu–In sys both copper and indium are soluble in liquid gallium,
tem, indium has a limited solidstate solubility in cop it can be expected that the rate of dissolution of the
per even at high temperatures. It is equal to 10.85 at % mechanosynthesized solid solutions of the Cu–In sys
at the temperature of the eutectoid decomposition tem will be significant. But an increase in the indium
(574°C) and only 1.15 at % at the temperature of concentration in the Cu(In) solid solution leads to an
250°С [3]. In this system, there exist also several inter increase in the rate of saturation of the melt by indium.
metallic phases. Therefore, as copper is spent for the formation of the
The Xray diffraction analysis of the products of intermetallic compound CuGa2, the crystallization
mechanical alloying (Fig. 1) showed that upon the rate of the new phase of indium must increase.
mechanoactivation of a copper powder with 12% In the Ga–In system, according to the phase dia
indium there is formed a solid solution of indium in gram [3], the solubility of In in solid Ga is less than
copper. In this case, the lattice parameter of copper 0.3 at %, and the solubility of Ga in In is 3.1 at %. The
increases to a = 3.665(9) Å (ast = 3.6150 Å). As the con eutectic point corresponds to 14.2 at % In and a tem
centration of the alloying component increases to perature of 15.3°C. At a temperature of 60°C, indium
20%, the mechanoactivation leads to an even larger can be dissolved in liquid gallium to 48 wt %.
increase in the lattice parameter of copper (to a = The in situ Xray diffraction study of the interaction
3.728(7) Å), which indicates an increase in the indium of solidsolution–intermetalliccompound mechano
concentration in the copper lattice. An increase in the composites in the Cu–In system with liquid gallium
content of indium leads to a decrease in the size of showed that first, immediately after mixing at room
crystallites of the copperbased solid solution from temperature, there is formed an intermetallic com
30 to 12 nm. pound CuGa2 without the formation of any intermedi
The morphology of particles changes depending on ate solidsolution states. The crystallization of the
the content of indium in the solid solution. It was indiumcontaining phase begins after a certain induc
shown by the AFM method that the mechanical acti tion period. We believe that as copper and gallium are
1400
1300
1200
1100
1000
900
Intensity, rel. units
800
700
600
500
400
300 (b)
200
In
Cu
In
Cu
In
In
(a)
In
100 Cu
Cu
0
30 40 50 60 70 80 90 100
2θ, deg
Fig. 1. Xray diffraction pattern of Cu–In powders after mechanical activation (20 min) in argon: (a) Cu + 12% In and (b) Cu +
20% In powder mixtures.
Z, nm
30
25
20
15
10
5
3 μm 1 μm
0
Fig. 2. 3D topography of a particle of the Cu–12% In solidsolution powder after mechanical activation with local regions of mol
ten indium.
3000
2500
2000
Intensity, rel. units
1500
1000
(b)
500
(a)
30 40 50 60 70 80 90
2θ, deg
Fig. 3. Xray diffraction patterns of (a) Cu + 12% In + Ga and (b) Cu + 20% In + Ga alloys: (×) CuGa2; ( ) In; and ( ) Cu.
spent for the formation of the intermetallic compound volume of the unit cell of indium can be connected
CuGa2, indium is freed and is dissolved in the gallium with the formation of the solid solution of gallium in
melt, being accumulated in it. The crystallization of indium.
the indiumbased phase occurs after a certain concen
On the polished sections of the alloys obtained
tration limit is exceeded. Thus, the induction period
upon the interaction of the mechanocomposites of the
prior to the beginning of the crystallization of indium
Cu–In system with liquid gallium (Fig. 4), regions of
upon the mechanoactivation of the Cu + 20% In pow
the unreacted solid solution of indium in copper are
der was 210 min [4], after which there was observed a
noted.
rapid growth of the In(Ga) phase and the complete
solidification of the alloy. In the process of interaction, indium is dissolved in
the molten gallium and concentrated and crystallized
The Xray diffraction analysis of the end products
at the solid–liquid interfaces. With an increase in the
of the interaction of the Cu–In mechanocomposites
indium concentration and with a decrease in the size
with gallium showed the presence of three phases: the
of particles of the Cu(In) solid solution, the size of
intermetallic compound CuGa2, indium, and unre
macropores decreases from 100 to 25 μm. The con
acted Cu(In) solid solution (Fig. 3). With an increase
centration of defects at the boundaries of macropores
of the indium concentration in the Cu(In) solid solu
also decreases. The formation of the indium phase
tion, the size of the indium crystallites increases from
occurs in the matrix of the intermetallic compound.
30 to 130 nm. In the case of the indium concentration
in the initial powder equal to 12%, there is observed a The studies of the surface topography of the alloys
decrease in the parameter c of the indium unit cell in by the SEM and AFM methods showed that the alloys
the arising alloy to с = 4.930(6) Å (сst = 4.9459 Å) and, are characterized by a large spread in the sizes of par
therefore, of the unitcell volume to V = 52.19 Å3 (Vst = ticles of the intermetallic compound CuGa2 (from 0.5
52.30 Å3). At the indium concentration of 20%, these to 10 μm). With an increase in the indium concentra
parameters increase insignificantly (to с = 4.949(5) Å tion to 20%, there is observed a decrease in the number
(V = 52.32 Å3)). The size of the crystallites of the cop of large faceted crystals of CuGa2; the average size of
perbased solid solution in both alloys is identical and crystals of the intermetallic compound is approxi
is approximately 7 nm. Insignificant changes in the mately 4 μm.
Cu(In)
CuGa2
In(Ga)
In(Ga)
Cu(In) Cu(In)
CuGa2
(a) 50 μm (b) 50 μm
Fig. 4. Microstructure of the alloy surface after polishing: (a) Cu + 12% In + Ga; and (b) Cu + 20% In + Ga.
CuGa2
(a) 1 μm (b) 1 μm
Fig. 5. AFM images of the surface of unpolished samples of the Cu + 12% In + Ga: (a) topography and (b) torsion image.
The study of the morphology of the arising structures the EBSD images the contrast is determined by the
by the AFM method and simultaneously obtaining dis topographic features of the surface and that the bright
tributions of images of the normal (topography) and lat ness distribution is uniform. The electronmicroprobe
eral (torsion) forces made it possible to reveal specific analysis at different points of the surface and on the
features of the structure of the phase of the solid solu faces of particles of the intermetallic compound
tion of gallium in indium (Fig. 5). Its distinctive feature CuGa2 showed the presence of indium in concentra
is the presence of streaks in the crystals of the solid solu tions from 0.1 to 8.08 wt % (Figs. 6a, 7a).
tion of gallium in indium, which are connected appar One additional characteristic feature of the surface
ently with the phase separation of the solid solution into of samples obtained upon the interaction of Cu–In
regions with greater and smaller concentrations of the mechanocomposites with liquid gallium is the pres
components; this is seen well in the torsion image ence of fine formations on the surface of crystals and
(Fig. 5b). The size of separate grains of the solid solu CuGa2 grains, which are seen more clearly in the
tion of gallium in indium exceeds 10 μm. AFM images (Fig. 7b) and are noted in the SEM
For studying the surface microstructure of the images (Fig. 7a). The formation of such structures on
alloys, scanning electron microscopy was used; the the surface of intermetalliccompound particles can
images of the surface of the alloy Cu + 20% In + Ga be connected with the crystallization of indium on the
were also obtained in secondary (Fig. 6a) and back surface of growing crystals. This makes it possible to
scattered (Fig. 6b) electrons. The application of the suggest the presence of indium on the surface of crys
EBSD method makes it possible to investigate the tals of the intermetallic compound CuGa2 in the form
composition inhomogeneity of the surface (the bright of thin films and dispersed formations. According to
ness distribution in the image depends on the atomic the AFM data, the thickness of films can reach 20 nm
number of an element). It is seen from Fig. 6b that in (Fig. 8b).
Cu Ga In
Spectrum 1 16.20 32.10 50.90
Spectrum 2 28.21 66.32 4.48
Spectrum 3 29.99 66.08 3.93
Spectrum 4 26.49 57.29 16.22
Spectrum 5
Spectrum 6
7.30 42.22
9.87 37.20
50.48
52.93 Spectrum 1 Spectrum 3
Spectrum 7 30.03 63.00 1.98
Spectrum 8 30.89 68.43 0.68
Spectrum 7
Spectrum 8 Spectrum 2
Spectrum 4
Spectrum 5
Fig. 6. SEM image of the Cu + 20% In + Ga taken in (a) forward and (b) backscattered electrons. In the upper lefthand part of
Fig. 1a, the table of data of the electronmicroprobe analysis carried out at the points indicated in the figure is given.
(a)
Spectrum 4
Spectrum 1
Spectrum 5
Spectrum 7
Spectrum 2
Spectrum 6
Spectrum 8
Spectrum 3
Cu Ga In
Spectrum 1 31.22 66.58 2.20
Spectrum 2 29.94 49.47 26.59
Spectrum 3 30.11 68.08 1.21
Spectrum 4 31.80 66.15 2.05 1 μm 0.5 μm
Spectrum 5
Spectrum 6
31.61 65.76
28.94 52.99
2.53
8.08
(b)
Spectrum 7 31.48 60.12 0.40
Spectrum 8 30.33 59.33 0.24
Fig. 7. (a) SEM and (b) AFM images of the faces of particles of the intermetallic compound CuGa2 obtained upon the interaction
of the Cu–20% In alloy with Ga.
Thus, on the basis of the obtained EMA data and pound particles, forming in this case nanosized films
the AFM and SEM results, it can be assumed that of indium with a thickness of about 20 nm and den
indium crystallizes not only in the form of large crys dritic structures (see Fig. 7b) caused by the constitu
tals of the phase of the solid solution of gallium in tional supercooling of the indium melt because of the
indium, but also on the faces of intermetalliccom consumption of gallium for the formation of СuGa2.
1
2
1 μm
(a) (b)
−15
CSTopography, nm
−22
−29
−36
−43
0 1 2
Length, um
CSTopography
Absolute values: [a] x = 214.2 nm; z(1) = 11.3 nm; [b] x = 562.4 nm; z(1) = 30.9 nm;
Difference between markers: dx = 348.41 nm; dz(1) = 19.6 nm;
Difference between first two lines: x[a] = 214.2 nm; dz(a) = 0 nm; x[b] = 562.4 nm; dz(b) = 0 nm.
Fig. 8. AFM image of the face of an intermetalliccompound particle and the profile of its transverse section.
pounds with Metallic Melts for the Purpose of Cre 2. V. L. Mironov, Principles of Scanning Probe Microscopy
ation of Functional Materials with Assigned Structure (Nizhnii Novgorod, 2004) [in Russian].
and Properties.” 3. Phase Diagrams of Binary Metal Systems: A Handbook,
Ed. by N. P. Lyakishev (Mashinostroenie, Moscow,
1997), Vol. 2, pp. 636–637 [in Russian].
REFERENCES 4. A. I. Ancharov, T. F. Grigorieva, S. V. Tsybulya, and
V. V. Boldyrev “Chemical Interaction of Cu–In, Cu–
1. T. F. Grigor’eva, A. P. Barinova, and N. Z. Lyakhov, Sn, and Cu–Bi Solid Solutions with Liquid Ga–In and
Mechanochemical Synthesis in Metal Systems (Novosi Ga–Sn Eutectics,” Neorg. Mater. 42 (10), 1164–1170
birsk, 2008) [in Russian]. (2006) [Inorg. Mater. 42 (10), 1058–1064 (2006)].