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MOSFET’s

Lec. Mian Hammad Nazir

Department of Electrical Engineering
CIIT Islamabad

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 DEPLETION-TYPE MOSFET
Types on Basis of Operation.
MOSFET

depletion type enhancement type

Types on the basis of Construction

MOSFET

n-channel depletion-type MOSFET p-channel depletion-type MOSFET

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 Enhancement-Type
MOSFET
Basic Construction

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 Four most IMPORTANT parameters

 VGS (Gate to Source / Gate Voltage)

 VTN ( Voltage at which Induced electron inversion

layer forms)
 VDS (Drain to Source)

 VDS (Sat) (Saturation Drain to Source)

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 Ideal MOSFET Current Voltage
Characteristics- NMOS DEVICE
 When VGS< VTN and VDS= Some small Voltage

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 • When VGS > VTN and VDS= Some small Voltage

The magnitude of the

current is a function of
Electron inversion
the amount of charge layer
in the inversion layer,
which in turn is a
function of the applied
gate voltage

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  When V GS is fixed and V DS is increased

If VGS is held fixed at some value such as

8V andVDS is increased from 2 to 5
V, the voltage VGS will drop from- 6 to
-3V and the gate will become less and
less positive with respect to the
drain

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 Characteristic curves
WhenVDS <VDS(Sat)

WhenVDS >V DS (Sat)

Where,
Kn= Conduction parameter

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 Example

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 p-Channel Enhancement-Type MOSFETs

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 Ideal MOSFET Current–Voltage
Characteristics—PMOS Device

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 Symbols
 N-Channel

 P- Channel

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 People are made to be loved and things
are made to be used.
The confusion in this world is because
People are being used and things are
being loved.

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 Depletion MOSFET’s

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 n-Channel Depletion-Mode MOSFET
 When VGS = 0 V

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  When the Gate terminal is at Positive Terminal

 For positive values of VGS, the positive gate will draw

additional electrons (free carriers) from the p-type substrate.

 As the gate-to-source voltage continues to increase in the

positive direction, reveals that the drain current will increase
at a rapid rate.

 Maximum rating shall be kept in mind when increasing the

positive gate voltage

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  When Gate Terminal is at Negative Potential

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 Transfer characteristics

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 Example

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 n channel Depletion type MOS SYMBOL

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 p-Channel Depletion-Type MOSFET

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 Example of Transfer curve of pMOS

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 p channel Depletion type MOS SYMBOL

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 Handling MOSFETs
MOSFETs are very sensitive to static electricity. Because of the very thin SiO2
layer between the external terminals and the layers of the device, any small
electrical discharge can create an unwanted conduction.

Protection

• Always transport in a static sensitive bag

• Always wear a static strap when handling MOSFETS

•
• Apply voltage limiting devices between the gate and source, such as
back-to-back Zeners to limit any transient voltage.

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 CMOS Devices

CMOS (complementary
MOSFET) uses a p-channel and
n-channel MOSFET; often on
the same substrate as shown
here.

Advantages

• Useful in logic circuit designs

• Higher input impedance
• Faster switching speeds
• Lower operating power levels

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 Symbols

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 VMOS Devices
VMOS (vertical MOSFET)
increases the surface area of
the device.

Advantages

• VMOS devices handle

higher currents by
providing more surface
area to dissipate the heat.

• VMOS devices also have

faster switching times.

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 Effects of Short-Channel Effects
 1.

Ref Link: http://inst.eecs.berkeley.edu/~ee130/sp03/lecture/lecture27.pdf

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 2. Velocity saturation

 In semiconductors, when a strong enough electric field is

applied, the carrier velocity in the semiconductor reaches a
maximum value, saturation velocity.When this happens, the
semiconductor is said to be in a state of velocity
saturation. As the applied electric field increases from that
point, the carrier velocity no longer increases

 Velocity saturation will lower the VDS(sat) voltage value. The

drain current will reach its saturation value at a smaller VDS
voltage.

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 Additional Non ideal V-I Characteristics
The five non ideal effects in the current–voltage
characteristics of MOS transistors are:
 The finite output resistance in the saturation region,
 The body effect
 Sub threshold
 Conduction,
 Breakdown effects
 Temperature effects

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