High-speed Switching Transistor (-60V, -5A)

2SA1952

Features Dimensions (Unit : mm)

1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)
2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 2SA1952
3) Wide SOA. (safe operating area) 5.5 1.5

0.75
0.9
4) Complements the 2SC5103.

(1)

2.3

5.1

6.5
( 2)
0.9

(3)

2.3

0.65
Absolute maximum ratings (Ta = 25C) C0.5

Parameter Symbol Limits Unit

Collector-base voltage VCBO −100 V
Collector-emitter voltage VCEO −60 V
0.8Min.
−5

0.5
Emitter-base voltage VEBO V

2.3
1.0
1.5

0.5
−5 A
Collector current IC
−10 A(Pulse) 2.5
1 W
Collector power dissipation PC 9.5
10 W(Tc=25°C)
(1) Base(Gate)
Junction temperature Tj 150 °C ROHM : CPT3 (2) Collector(Drain)
Storage temperature Tstg −55~+150 °C
EIAJ : SC-63 (3) Emitter(Source)

Packaging specifications and hFE

Type 2SA1952
Package CPT3
hFE Q
Code TL
Basic ordering unit (pieces) 2500

Electrical characteristics (Ta = 25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −100 − − V IC = −50μA
Collector-emitter breakdown voltage BVCEO −60 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE = −50μA
Collector cutoff current ICBO − − −10 μA VCB = −100V
Emitter cutoff current IEBO − − −10 μA VEB = −5V
− − −0.3 V IC/IB= −3A/ −0.15A
Collector-emitter saturation voltage VCE(sat)
− − −0.5 V IC/IB= −4A/ −0.2A
− − −1.2 V IC/IB= −3A/ −0.15A
Base-emitter saturation voltage VBE(sat)
− − −1.5 V IC/IB= −4A /−0.2A
hFE1 120 − 270 − VCE = −2V , IC = −1A
DC current transfer ratio
hFE2 40 − − − VCE = −2V , IC = −3A
Transition frequency fT − 80 − MHz VCE = −10V , IE = 0.5A , f = 30MHz
Output capacitance Cob − 130 − pF VCB = −10V , IE = 0A , f = 1MHz
Turn-on time ton − − 0.3 μs IC = −3A , RL = 10Ω
Storage time tstg − − 1.5 μs IB1 = −IB2 = −0.15A
Fall time tf − − 0.3 μs VCC −30V

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○
 2SA1952 Data Sheet

Electrical characteristics curves

A A
0m m
−5 −9 −80 −10 1000
−70mA Tc =25°C VCE= −2V VCE= −2V
0mA

−5 Ta=100°C Pulsed Pulsed

COLLECTOR CURRENT : IC (A)

500
−60mA
−10

COLLECTOR CURRENT : IC (A)

−4 25°C
−2 −25°C 200

DC CURRENT GAIN : hEF

−50mA
−1 100
−3 −40mA
−0.5 50 Ta=100°C
−30mA 25°C
−2 −0.2 20
−25°C
−20mA −0.1 10
−0.05 5
−1
−10mA
−0.02 2
IB=0A
0 −0.01 1
0 −1 −2 −3 −4 −5 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A)

Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
: VBE(sat) (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

10000
−10 1000 Ta=25°C
IC/IB=20 Ta=25°C f=1MHz
VCE= −10A 5000
−5 Pulsed 500 IE=0A
TRANSITION FREQUENCY: fT (MHz)

Ta= −25°C
2000
−2 25°C 200
100°C VBE(sat) 1000
−1 100
BASE SATURATION VOLTAGE

500
−0.5 50

200
−0.2 20
100
−0.1 10
5 50
−0.05 VCE(sat) Ta=100°C

25°C 2 20
−0.02
−25°C 10
−0.01 1
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR CURRENT : IC (A)

Fig.4 Collector-emitter saturation voltage Fig.5 Resistance ratio vs. emitter current Fig.6 Collector output capacitance
vs. collector current vs. collector-base voltage
Base-emitter saturation voltage

10
IE=20IB1= −20IB2
5

2 tstg
STRAGE TIME : tstg(μs)
TURN ON TIME : ton(μs)
: tf(μs)

ton
1
tf
0.5
FALL TIME

0.2

0.1
0.05

0.02
0.01
−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : IC (A)

Fig.7 Switching characteristics

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 Notice

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