Electronic Devices

Q.1) In a photodiode, the open circuit photovoltaic potential varies as

a) square of the light intensity

b) linearly with light intensity

c) logarithmically with light intensity

d) none of the above.

Q.2) Which of the following material cannot be used to fabricate a light emitting diode

A ) GaAs

b) AlGaAs

c) GaAsP

d) Si

Q.3) A tunnel diode

(1) is used in an oscillator.

(2) has greater breakdown voltage than ordinary diode

(3) is like a linear resister in reverse bias

(4) has heavily doped p-n junctions

(a) (1) &(4) (b)(2) & (4) (c) (1) ,(3) &(4) (d) (1) & (3)

Q.4) A non ideal diode is connected to a battery in series with a resistance such that the diode
is forward biased and conducting with voltage drop of 0.7 Volts .Suddenly the polarity of the
battery is reversed at t=0. Just after that (i.e at t=0+)

(a) Current will flow in opposite direction.

(b) No current will flow.

(c) the voltage across the diode is negative.

(d) the voltage across the diode is zero.

Q.5) For proper functioning of a BJT (npn) device, the width of the base region must be kept

(a) much greater than diffusion length Ln of the electron.

(b) much lesser than diffusion length Ln of the electron

(c) twice the diffusion length Ln of the electron

(d) none of the above.

Q.6) In a extrinsic semiconductor (n type) ,the energy of the Fermi level (for a non
degenerate case)

(a) increase with the increase in doping concentration.

(b) decreases with increase doping concentration

(c) remains constant with change in doping concentration.

(d) depends on the size of dopant atoms.

Q.7) Ten identical diodes are connected in parallel across a battery. If these diodes are to be
replaced by a single equivalent diode of the same material and length,then

(a) cross-sectional area of equivalent diode is one tenth of that of single diode.

(b) cross-sectional area of equivalent diode is ten times of that of single diode.

(c) cross-sectional area of equivalent diode is equal to that of single diode.

(d) cross-sectional area can take any value.

Q.8 In a pn junction diode ND =1017 atoms/cm3 and NA =1016 atoms/cm3 . Then the energy
difference between the conduction bands on p and n side at room temperature T=300K is
given by : (ni=1.5x1010 cm-3 )

(a) 0.378 eV (b) 0.757 eV (c) 0.680 eV (d) 0.584 eV

Q.9) In a Si diode, the diode current is ID= 0.755mA, applied voltage is VD= 0.7 V, saturation
current is Io =10-10 A. Value of ideality factor (ƞ) is

(a) 1.70 (b) 1.56 (c) 1.45 (d) 2.10

Q.10) The width of depletion region for a open circuited pn junction diode (Si) with ND= 1018
cm-3 , NA=1016 cm-3 and relative permittivity of εr =11.8 is equal to (ni=1.5x1010 cm-3)

(a) 54.6um (b) 32.8um (c) 24.5um (d) 87.6um