This product complies with the RoHS Directive (EU 2002/95/EC).

IGBT

2PG006
Silicon N-channel enhancement IGBT

For plasma display panel drive

For high speed switching circuits

 Features  Package

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 Low collector-emitter saturation voltage: VCE(sat) < 2.4 V Code

 High-speed switching: tf = 175 ns (typ.) TO-220D-A1
Marking Symbol: 2PG006

Pin Name

 Absolute Maximum Ratings TC = 25°C

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1. Gate
Parameter Symbol Rating Unit

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2. Collector
Collector-emitter voltage (E-B short) VCES 430 V 3. Emitter

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Gate-emitter voltage (E-B short) VGES –30 to +35 V

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Collector current IC 40 A  Internal Connection

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Peak collector current * ICP 230 A

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Power dissipation PC

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Junction temperature Tj 150 °C
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Storage temperature Tstg –55 to +150 °C

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Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%)
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 Electrical Characteristics TC = 25°C±3°C

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Parameter Symbol Conditions Min Typ Max Unit

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Collector-emitter voltage (E-B short) VCES IC = 1 mA, VGE = 0 430 V

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Collector-emitter cutoff current (E-B short) * ICES VCE = 344 V, VGE = 0 5.0 mA
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Gate-emitter cutoff current (E-B short) IGES VGE = ±35 V, –30 V, VCE = 0 ±1.0 mA
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Gate-emitter threshold voltage VGE(th) VCE = 10 V, IC = 1.0 mA 3.0 5.5 V

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Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 40 A 1.75 2.4 V

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Collector-emitter reverse break down voltage –VCE IC = –100 mA, VGE = 15 V 18 22.5 V
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Short-circuit input capacitance (Common emitter) Cies 1 200 pF

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Short-circuit output capacitance (Common emitter) Coes VCE = 25 V, VGE = 0, f = 1 MHz 130 pF
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Reverse transfer capacitance (Common emitter) Cres 20 pF

Gate charge load Qg 54 nC
Gate-emitter charge Qge VCC = 200 V, IC = 40 A, VGE = 15 V 7 nC
Gate-collector charge Qgc 22 nC
Turn-on delay time td(on) 65 ns
Rise time tr VCC = 200 V, IC = 40 A, 400 ns
Turn-off delay time td(off) RL ≈ 5 Ω, VGE = 15 V 185 ns
Fall time tf 175 260 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ICES is 100% tested according to the ICES inspection standards. (< 1.0 mA under the conditions of VCE = 344 V, VGE = 0)

Publication date: February 2009 SJN00006AED 1

2
Power dissipation PC (W)

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60
80
100
2PG006

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Ambient temperature Ta (°C)

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ICP t = 10 ms 1 ms 100 µs
2PG006_IC-VCE

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Safe operation area

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TC = 25°C
Non repetitive pulse

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Collector-emitter voltage VCE (V)

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3
2PG006
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

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Standards in advance to make sure that the latest specifications satisfy your requirements.

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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

life
defect which may arise later in your equipment.

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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

du
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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