Lab Experiments 111

KamalJeeth Instrumentation & Service Unit

Experiment-298 S

I-V CHARACTERISTICS
OF A PHOTO DIODE
Dr Jeethendra Kumar P K
KamalJeeth Instrumentation and Service Unit, Tata nagar, Bangalore-560 092. INDIA.
Email: jeeth_kjisu@rediffmail.com

Abstract
Using Ga-As based photo diode (PD) in the visible range, I-V characteristic curves
are drawn and the variation of PD current with input light power is studied. PD
responsivity (Rλ) and Quantum Efficiency (QE) are calculated.

Introduction

Photodiodes are semiconductor devices that respond to high-energy particles and photons.
Radiation-sensitive junction is formed in a semiconductor material whose resistivity changes
when illuminated by light photons. The junction can be made to respond to the entire
electromagnetic spectrum.

Figure-1: PN-junction visible range LED type PD used in the experiment

Three major types of photodiodes are available in the market: (i) PN junction photo diode, (ii)
PIN junction photo diode, and (iii) Avalanche photo diode (APD). PN junction photodiodes
comprise a two-electrode, radiation-sensitive PN junction formed in a semiconductor material
in which the reverse current varies with the amount of illumination. PIN junction
photodiodes are diodes with a large intrinsic region sandwiched between p-doped and n-
doped semiconducting regions. Photons absorbed in this region create electron-hole pairs
that are then separated by an electric field, thus generating an electric current in a load
circuit. Avalanche photodiodes are devices that utilize avalanche multiplication of current by
means of hole-electron pairs created by absorbed photons. When the reverse-bias voltage of
the device approaches the breakdown level, the hole-electron pairs collide with ions to create
additional hole-electron pairs, thus resulting in the signal gain.

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The photodiode spectral response [1] can be measured in X-ray, UV, visible, or IR regions of
the electromagnetic spectrum. X-ray photodiodes are optimized for X-ray, gamma ray, and
beta radiation detection. UV enhanced photodiodes are optimized for the UV and blue
spectral regions, which requires special fabrication processes. Visible photodiodes operate in
the visible range. Figure-1 shows the PN-junction PD used in this experiment.
A photo diode behaves like a current source when illuminated. When operated without bias,
the current is distributed between the shunt resistance and external load resistor. In this mode,
a voltage is developed which creates forward bias, thus reducing its ability to remain as a
constant current source. When operated with reverse bias, the photo diode becomes an ideal
current source [2-4].

Figure-2: Typical Responsivity curve of photodiode

Picture courtesy: electron9.phys.utk.edu/.../m4/detectors.htm

Optical Characteristics

Responsivity (Rλ)
The degree of response of a silicon photodiode to light is a measure of its sensitivity, and it is
defined as the ratio of the photocurrent IPD to the incident light power P at a given wavelength
ூ
Rλ= ುವ …1
௉

Where IPD is photo diode current and

P is the light input power

In other words, it is a measure of the effectiveness of the conversion of the light power into
electrical current. It varies with the wavelength of the incident light as well as applied
reverse bias and temperature. By drawing a graph of PD current variation with input LED
power, one can accurately determine the value of responsivity, as given by the slope of the
straight line representing IPD verses P curve.

Responsivity increases slightly with applied reverse bias due to improved charge collection
efficiency of the photodiode. Also it varies due to change in temperature. This is due to
decrease or increase of the band gap, because of increase or decrease in the temperature
respectively. Spectral responsivity may vary from one PD to the other and it is also dependent

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on wavelength of the light. However, the relative variations in responsivity can be reduced to
less than 1% on a selective basis. Figure-2 shows typical photodiode responsivity. It varies
almost linearly with wavelength, being smaller for lower wavelength.

Quantum Efficiency (QE)

Quantum efficiency is defined as the fraction of the incident photons that contributes to
photocurrent. It is related to responsivity as
ோഊ
Q E = 1240 …2
ఒ

I-V Characteristics
The current-voltage (I-V) characteristic of a photodiode is a set of curves relating the voltage
across the junction to the current flowing through it. When the photodiode is forward biased,
there is an exponential increase in the current similar to rectifier diode. When a reverse bias is
applied, a small reverse saturation current appears. The forward diode current is given by
೜ೇ
ID = Isat (݁ ೖ೅ -1) …3

This is purely the diode equation. In the photoconductive mode [3], the photo diode operates
in the reverse bias mode. Hence the width of the potential barrier (depletion region) gets
higher so that the pn junction current Ipn will be governed by the thermal current Isat which
flows through the diode in the absence of illumination. Hence the current through the
illuminated PD is given by

IPD = IP -Ipn = IP+Isat ≈IP …4

Where IP is photon current (current due to illumination)

Isat is reverse saturation current
Ipn is the current flowing across the junction due to minority carriers.

Equation-4 shows that in the reverse bias case the conduction depends entirely on the
illumination. Hence photo diode current is proportional to the incident light intensity. The
photo diode current also follows the inverse square law and depends on the wavelength of the
light. Hence there is no exact formula for estimating photo diode current in terms of an
experimentally measureable quantity.

As the applied reverse bias voltage increases, there is a sharp increase in the photo current
and the device will be damaged permanently. This voltage is called breakdown voltage. The
magnitude of the breakdown voltage varies with the type of PD. It lies in the range 5 to 100V.
Hence one should not apply too much reverse bias.

Apparatus Used

Photodiode experimental setup consisting of: 0-3V regulated power supply, 0-2mA digital dc
current meter, 0-20V digital dc volt meter, white light LED module, and photo diode LED
type. A transistor drive for LED is used. The LED power (PLED=VLED ILED) is directly read

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from the dial marked on the LED power supply. The complete experimental set-up is shown
in Figure-3.

Figure-3: Photo diode experimental set-up

Experimental Procedure

The experiment consists of two parts

Part-A: Determination of Responsivity

Part-B: Determination of I-V Characteristics

Part-A: Determination of Responsivity

Figure-4 shows the light arrangement of the experimental setup. The white light LED and PD
are placed face-to-face 10cm apart (This is the industry standard for any LED measurements)
[5]. 5V power supply and transistor drives are provided for the LED as shown in Figure-5. By
varying the pot in the emitter circuit the LED current is varied. A dial is provided for the
potentiometer which directly reads the LED input power (PLED= VLEDILED).

Figure-4: Light arrangement of the experimental set-up

1. The LED (white light) and PD are placed face to face as shown in Figure-4, and the
light arrangement is switched on. LED power is set to 10mW by turning the knob to
its minimum position. After ensuring that the LED is glowing and while noting the
PD current in the meter, the cover is placed so that any external light will not affect

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the readings. Positive terminal of the PD (p) is connected to the negative terminal of
the power supply and negative of the PD is connected to positive terminal of the
power supply. This reverse biases the photo diode.

2. The voltage across PD is set to -1V by varying 0-3V power supply. The PD current
IPD is noted.

VPD = -1V, IPD =-393µA

3. The LED power is increased to 11mW and VPD is again set to -1V and the
corresponding PD current is noted in Table-1.

4. The trial is repeated by varying the input power to 12mW, 13mW etc. reaching up to
50mW. In each case VPD is set to -1V and IPD is noted in Table-1.

5. A graph showing the variation of LED power on X-axis and PD current on Y axis is
drawn as shown in Figure-6. A straight line graph is obtained, slope of which gives
the value of responsivity.

0-2mA
+5V
2.2K
LED
IPD
0-3V VPD
PD
100K

220

LED
Calibrated Current
in mW 500
Adjustment

Figure-5: Circuit Connections

Table-1
PLED(mW) IPD(µA) Rrev(KΩ)
10 393 2.54
11 403 2.48
12 447 2.23
13 474 2.08
14 505 1.98
15 538 1.85
18 631 1.58
21 728 1.37
24 795 1.25
30 941 1.06
38 1137 0.87
50 1356 0.73
PD current variation with LED power

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The external conversion efficiency of white LED [5] is 0.66, hence by dividing responsivity
by 0.66 gives the exact responsivity of the PD.

Rλ =Slope = 0.027/0.66 = 0.0409A/W = 41 mA/W

Quantum efficiency (QE) is calculated using equation-2

ோ ଴.଴ସ଴ଽ
QE = 1240 ఒഊ = 1240 ହ଻ହ
= 0.088 = 8.8%

The small QE value 8.8% indicates that only 8.8% of the photons fall on the photo diode and
contribute to the photo current. This is because the light coming out of the LED is highly
directional, forming a cone with solid angle [5]. Only a portion of the light falls on the
photodiode as shown in Figure-7.This parameter is similar to the fill factor in the case of a
solar cell [6].

1500

1000
IPD(µA)

500

0
0 10 20 30 40 50 60
PLED (mW)

Figure-6: Variation of PD current with LED power (VPD=-1V)

Photodiode

Figure-7: Amount of LED light falling on photodiode

Part-B: Determination of I-V Characteristics of PD

In this part of the experiment PD current and voltage are recorded for different LED input
powers.

6. The LED power is set to 10mW on the dial and VPD is set to -0.10V and the
corresponding IPD is noted

IPD=-19µA

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7. The trial is repeated by increasing VPD in suitable steps up to a maximum of -2V. The
corresponding IPD values are noted in Table-2.

Table-2
VPD(V) IPD(µA)
PLED =10mW PLED =20mW PLED =30mW PLED =40mW PLED =50mW
0 0 0 0 0 0
-0.1 -19 -47 -57 -59 -72
-0.2 -203 -338 -346 -370 -424
-0.3 -367 -631 -771 -838 -904
-0.4 -382 -686 -898 -1094 -1212
-0.5 -384 -693 -921 -1132 -1296
-1.0 -393 -711 -945 -1167 -1350
-2.0 -404 -732 -976 -1204 -
Variation of PD voltage with current*
(Negative voltage and current indicate the reverse bias).

10mW 20mW 30mW 40mW 50mW

100
-100
-2 -1.5 -1 -0.5 0
-300
Current IPD(uA)

-500
-700
-900
-1100
-1300
-1500
Voltage VPD (V)

Figure-8: I-V characteristic curves of PD

3
PD Reverse resistance (K

2.5
2
Ohm)

1.5
1
0.5
0
0 10 20 30 40 50 60
LED Power (mW)

Fuigure-9: PD reverse resistance variation with LED power

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8. The experiment is repeated by increasing the LED power to 20, 30, 40 and 50mW in
steps. In each case variation in VPD and corresponding IPD are noted in Table-2.

9. A graph is drawn taking VPD along X-axis and IPD along Y-axis as shown in Figure-8.
The equal spacing between characteristic curves indicates linearity of photo current
with light intensity which is clearly indicated in Figure-6.

10. Another graph showing the PD resistance variation with light is shown Figure-9.
From which one can see how the pn-junction resistance vary with light power.

Results

The results obtained are tabulated in Table-3.

Table-3
Parameters Expt. Typical
Responsivity (Rλ) at 575nm 0.041A/W 0.35A/W
Quantum Efficiency (QE) 8.8 % <20%
Experimental Results

Discussion
I-V characteristic curve of PD shown in Figure-8 resemble that of a Germanium diode
characteristic curve in the reverse bias. The only difference in case of germanium diode
(which is obsolete at present) is the different curves obtained at different temperatures. In the
case of a Ga-As PD, different curves are obtained for different light intensities.

PD resistance varied from 2.5KΩ to 730Ω for input light power varying from 10mW to
50mW. All measurements are done keeping the distance between LED and PD as 10cm
which is standard in industry for LED measurements.

Silicon diodes do not conduct in the reverse bias whereas the PDs are optimized to conduct in
the reverse bias by controlling the level of doping and also due to its inherent structure. When
there is no light falling on the PD it does not conduct in the reverse bias, hence light is must
for conduction in PD.

The responsivity value 41mA/watt is low compared to typical value for which the distance
between PD and LED are not known. Similarly QE ≈8.8% is also low compared to the typical
value.

References

[1] Dr Jeethendra Kumar P K, LED Spectral Response, LE Vol-7, No-2, Page-87.

[2] Photodiode history of operation, AP Technologies, www.aptechnologies.co.uk

[3] L Sharupich and Tugov, Optoelectronics, MIR publications, Page-63, 1987.

[4] UDT sensors, Inc. www.udt.com

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[5] Dr Jeethendra Kumar P K, Efficiency of LED, LE Vol-10, No-1, Page-50.

[6] Dr Jeethendra Kumar P K, Solar Cell Characteristics, LE Vol-2, No-1, June- 2002,
Page-16.

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