Transistor Specification and Parameter

Definitions
Transistor specification parameters
There are a number of standard parameters with abbreviations that are used to define the performance
of a transistor. The definitions of these parameters are outlined in the table below:

Parameter Definition and description

The type number of the device is an individual part number given to the device.
Type Device numbers normally conform to the JEDEC (American) or Pro-Electron
number (European) numbering systems - see Related Articles under main left hand menu
block. There is also a Japanese standard system for transistor numbering.
Case style - a variety of case standard case styles are available. These normally are
of the form TOxx leaded devices and SOTxxx for surface mount devices. Note it is
Case also important to check the pin connections as they are not always standard. Some
transistor types may have their connections in the format EBC whereas occasionally
they can be ECB, and this can cause confusion in some cases.
The material used for the device is important as it affects the junction forward bias
Material and other characteristics. The most common materials used for bipolar transistors
are silicon and germanium.
The polarity of the device is important. It defines the polarity of the biasing and
operation of the device. The two types are NPN and PNP. NPN is the most common
type. It has the higher speeds as electrons are the majority carriers and these have a
Polarity
greater mobility than holes. When run in common emitter configurations, the NPN
circuits will use a positive rail voltage and negative common line, PNP transistors
will require a negative rail and positive common voltage.
VCEO Collector emitter voltage with base open circuit
VCBO Collector base voltage with the emitter open circuit
VEBO Emitter base voltage with collector open circuit
IC Collector current
ICM Peak collector current
IBM Peak base current
Total power dissipation - this is normally for an ambient temperature of 25C. It is
PTOT the maximum value of power that can safely be dissipated for that transistor with its
stated package.
Junction temperature - care must be taken to ensure that this figure is not exceeded
Tj otherwise the device could be damaged or long term reliability affected.
Dissipation / temperature curves are often provided to facilitate calculations.
Tamb Ambient temperature
Parameter Definition and description
Storage temperature. This is the temperature range over which the device may be
Tstg stored. Outside this range, damage may occur to the materials used in the device.
The operating temperature range is normally well within the bounds of the storage
temperature range.
ICBO Collector base cut-off current
IEBO Emitter base cut-off current
hFE Forward current gain
VCEsat Collector emitter saturation voltage
VBEsat Base emitter saturation voltage
Cc Collector capacitance
Ce Emitter capacitance
Frequency Transition - the frequency where common emitter current gain falls to
Ft unity, i.e. the gain bandwidth product for the transistor. It is normally measured in
MHz. The operating frequency of the transistor should normally be well below the
transition frequency.
When using the transistor specifications and parameters, it is worth remembering that the "Absolute
Maximum Ratings" detailed in a transistor datasheet are the values that if they are exceeded may result
in the failure of the transistor. Maximum ratings usually include collector-to-base voltage, emitter-to-
base voltage, collector current, emitter current, and collector power dissipation.

Main FET specifications

Some of the main FET specifications used in datasheets are defined below. Some of the parameters are
particularly important for different types of FET, e.g. JFET while others may be more applicable to the
MOSFET, etc.
• Gate source voltage, VGS : The FET parameter VGS is the rating for the maximum voltage that
can be tolerated between the gate and source terminals. The purpose for including this
parameter in the data sheet is to prevent damage of the gate oxide. The actual gate oxide
withstand voltage is typically much higher than this but it varies as a result of the tolerances that
exist in the manufacturing processes. It is advisable to remain well within this rating so that the
reliability of the device is maintained. Often many design rules indicate that the device should
only be run to 60 or 70% of this rating.
• Drain-Source Voltage, VDSS: This is a rating for the maximum drain-source voltage that can
be applied without causing avalanche breakdown. The parameter is normally stated for the case
where the gate is shorted to the source and for a temperature of 25°C. Depending on
temperature, the avalanche breakdown voltage could actually be less than the VDSS rating.
 When designing a circuit, it is always best to leave a significant margin between the maximum
voltage to be experienced and the VDSS specification. Often they may be run at around 50%
VDSS to ensure reliability.
• Threshold voltage VGS(TH) : The threshold voltage VGS(TH) is the minimum gate voltage that
can form a conducting channel between the source and the drain. It is normally quoted for a
given source drain current.
• Gate reverse leakage current , Igss:
• Gate source cut-off voltage , VGS(off): The gate source cut-off voltage is really a turn-off
specification. It defines the threshold voltage for a given residual current, so the device is
basically off but on the verge of turning on. The threshold voltage has a negative temperature
coefficient, i.e. it decreases with increasing temperature. This temperature coefficient also
affects turn-on and turn-off delay times which has an impact on some circuits.
• Drain current at zero gate voltage , Idss : This FET parameter is the maximum continuous
current the device can carry with the device fully on. Normally it is specified for a particular
temperature, typically 25°C.

This FET specification is based on the junction-to-case thermal resistance rating RθJC
(junction / channel temperature) and the case temperature.

This FET parameter is of particular interest for power MOSFETs and when determining the
maximum current parameter no switching losses are accounted for. Also holding the case at
25°C is not feasible in practice. As a result the actual switching current should be limited to less
than half of the Idss at TC = 25°C rating in a hard switched application. Values ofa third to a
quarter are commonly used.
• Forward transconductance, Gfs :
• Input capacitance, Ciss : The input capacitance parameter for a FET is the capacitance that is
measured between the gate and source terminals with the drain shorted to the source for AC
signals. In other words this is effectively the capacitance between the gate and channel. Ciss is
made up of the gate to drain capacitance Cgd in parallel with the gate to source capacitance Cgs.
This can be expressed as:
Ciss = Cgs + Cgd
• Drain-source on resistance, Rds(on) : With the FET turned hard on, this is the resistance in
ohms exhibited across the channel between the drain and source. It is particularly important in
switching applications from logic to power switching as well as in RF switching, including
applications in mixers.
• Power dissipation, Ptot : This FET specification is the maximum continuous power the device
can dissipate. It is normally specified in free standing in air, or with the base held at a given
temperature, typically 25°C. The actual conditions, whether held in a heat-sink, or in free air
will depend upon the device types and the manufacturer.