Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Zhang Yong
Inner Mongolia University of Science and Technology
Personal Information
Personal Information
Personal Information
Personal Information
Personal Information
Personal Information
Personal Information
Personal Information
1 Readµ
1 Readµ
You will get some short documents about automation.
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
Professional translations about some sentences
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
Professional translations about some sentences
Standard of the translation.
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
Professional translations about some sentences
Standard of the translation.
3 Writeµ
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
Professional translations about some sentences
Standard of the translation.
3 Writeµ
I will make a presentation about the papers writing.
1 Readµ
You will get some short documents about automation.
Discuss the documents in groups.
Recite the documents in Chinese.
2 Translate:
Professional translations about some sentences
Standard of the translation.
3 Writeµ
I will make a presentation about the papers writing.
Write some articles about electronics, computer, network or
automation.
network : ä, >´
identify : £O, @Ñ, À•Ó˜, ˜—
resistor : >{ì
inductor : >aì
capacitor : >Nì
characteristic : A5 , A5-‚
Ohm : î0
Faraday : {.1
integral : È©
increment : Oþ
electric charge : >Ö
passive network : Ã ä
active network : k ä
armature : >Í
aforementioned : þã ; c¡J
represent : “L; L«; ²
amplify : ˜Œ
symbolic : ÎÒ ; PÒ
mesh : š
loop current : £´>6
voltage drop : >Øü
in series : Gé
variable : Cþ
differential : ‡© ; ‡©
outline : (x)Ó+; JÑ... ‡:
eliminate : žØ, éž
parameter : ëê
Electrical Networks
Electrical Networks
u = iR (3.1)
where u represents voltage, V; i represents cueernt, A; R
represents resistance, Ω.
The voltage across a pure inductor is defined by Faraday’s law,
which states that the voltage across the inductor is proportional to
the rate of change with time of the current through the inductor.
Thus we have
∂i
u = L (3.2)
∂t
∂i
where ∂t represents the rate of change of current, A/s, L
represents inductance, H.
Electrical Networks
Electrical Networks
Z
1
u = idt (3.4)
C
where C represents capacitance, F.
The summary of Eqs. (3.1), (3.2) and (3.4) for the three forms
of passive circuit elements is given in Fig. 1. Note that
conventional current flow is used; hence the current in each
element is show in direction of decreasing voltage.
Active electrical devices involve the conversion of energy to
electrical form. For example, the electrical energy in a battery is
derives from its stored chemical energy. The electrical energy of a
generator is a result of the mechanical energy of the rotating
armature.
Electrical Networks
i R i L i
C
E i i u
U R = iR U L = L di dt UC = (1 C)∫ idt
UR
i= i = (1 L ) ∫ u L dt i = C du dt
R a) Voltage source b) Current source
a) Resistor b) Inductor c) Capcitor
uR uR
R R
i i
e L uL e L uL
C
uc
Electrical Networks
Electrical Networks
Electrical Networks
Electrical Networks
duL R de
+ uL = (3.8)
dt L dt
which is the differential equation for the inductor voltage.
Electrical Networks
d2 q dq q
L 2
+R + =e (3.10)
dt dt C
Three-phase circuits
Most of the electrical power generated in the world today is
three-phase. Three-phase power was first conceived by Nikola
Tesla. A three-phase circuit is merely a combination of three
single-phase circuits. Because of this fact, current, voltage, and
power relations of balanced three-phase circuits may be studied by
the application of single-phase rules to the component parts of the
three-phase circuit. Viewed in this light, it will be found that the
analysis of three-phase circuits is little more difficult than that of
single-phase circuits.
Wye Connection
Wye Connection
Wye Connection
If the center tap is used as a common point, the two line voltages
on either side of it will be 180bapart and opposite in polarity,
Figure 9. The vector sum of these two voltages would be 240 V.
Three-phase voltages are 120bapart, not 180b. If the three
voltages are drawn 120bapart, it will be seen that the vector sum
of these voltages is 208 V.
Another illustration of vector addition is shown in Figure 11. In
this illustration two-phase voltage vectors are added and the
resultant is drawn from the starting point of one vector to the end
point of the other. The parallelogram method of vector addition
for the voltages in a wye-connected three-phase system is shown in
Figure 12.
Delta Connections
In Figure 13, three separate inductive loads have been connected
to form a delta connection. This connection receives its name from
the fact that a schematic diagram of this connection resembles the
Greek letter delta (Ù). In Figure 14, ammeters have been
connected in the line and in the phase. In the delta connection,
line voltage and phase voltage are the same. Notice that both
voltmeters indicate a value of 480 V.
Delta Connections
Notice that the line current and phase current are different,
however. The line current of a delta connection is higher than the
phase current by a factor of the square root of 3
Diodes
The five major types of power semiconductors used in solid-state
AC motor control are: Diodes, Thyristors (e.g., silicon-controlled
rectifiers)SCRs), Transistors, Gate-turn-off thyristors (GTOs) and
Triacs.
Fig.1 shows the circuit symbol for the diode. When the diode is
forward biased, it begins to conduct with only a small forward
voltage across it, which is on the order of one volt. When the
diode is reverse biased, only a negligibly small leakage current flows
through the device until the reverse breakdown voltage is reached.
In normal operation, the reverse bias voltage should not reach the
breakdown rating.
Diodes
In view of the very small leakage currents in the blocking
(reverse bias) state and small voltage in the conducting (forward
bias) state as compared to the operating voltages and currents of
the circuit in which the diode is used, the i − v characteristics for
the diode can be idealized, see Fig. 2. This idealized characteristic
can be used for analyzing the converter topology but should not be
used for the actual design, when, for example, heat sink
requirements for the device are being estimated.
Diodes
Diodes
Schottky diodes. These diodes are used where a low forward
voltage drop (typically 0.3 V) is needed in very low output
voltage circuits. These diodes are limited in their blocking
voltage capabilities to 50∼100 V.
Diodes
Schottky diodes. These diodes are used where a low forward
voltage drop (typically 0.3 V) is needed in very low output
voltage circuits. These diodes are limited in their blocking
voltage capabilities to 50∼100 V.
Fast-recovery diode. These are designed to be used in
high-frequency circuits in combination with controllable
switches where a small recovery time is needed. At power
level of several hundred volts and several hundred ampers,
such diodes have trr ratings of less than a few microseconds.
Diodes
Schottky diodes. These diodes are used where a low forward
voltage drop (typically 0.3 V) is needed in very low output
voltage circuits. These diodes are limited in their blocking
voltage capabilities to 50∼100 V.
Fast-recovery diode. These are designed to be used in
high-frequency circuits in combination with controllable
switches where a small recovery time is needed. At power
level of several hundred volts and several hundred ampers,
such diodes have trr ratings of less than a few microseconds.
Line-frequency diodes. The on-state voltage of these diodes
is designed to be as low as possible and as a consequence have
large trr , which are acceptable for line-frequency applications.
These diodes are available with blocking voltages ratings of
several kilovolts and current ratings of several kiloamperes.
Moreover, they can be connected in series and parallel to
satisfy any voltage and current requirement.
ZHANG Yong Specified English for Automation
Personal Info. outline Electrics and electronics Thanks Networks 3-phase circuits Diodes and Thyristors
Thyristors
The circuit symbol for the thyristor is shown in Fig. 2. The main
current flows from the anode (A) to the cathode (K). In its
off-state, the thyristor can block a forward polarity voltage and not
conduct.
The thyristor can be triggered into the on-state by applying a
pulse of positive gate current for a short duration provideed that
the device is in its forward blocking state. The forward voltage
drop in the on-state is only a few volts (typically 1 to 3 V
depending on the device blocking voltage rating).
Thyristors
Thyristors
Thyristors
Thyristors
Thyristors
Thyristors
Thyristors
GTO : €›¬¹+
Transistor : ¬N+
Triac : V•Œ›7
biased : Ø
blocking : µ£, {l, {ä
topology : ÿÀÆ, ÿÀ(
overvoltage : L>Ø
microsecond : ‡©
andoe : 4
cathode : Ò4
polority : 45
trigger : >u, éÄ, u , -uå
latch : µ£
controllable : Œ›
rms : k Š
ZHANG Yong Specified English for Automation
Personal Info. outline Electrics and electronics Thanks Networks 3-phase circuits Diodes and Thyristors
resistant : >{
crossover : ª
prematurely : L@/; Ø Ï/
rectifying : 6
excess : Lþ ;
silicon : 7
asymmetrical : Øé¡ ; زï
forward biased : ˜
reverse biased : ‡ ˜
breakdown rating : ½ÂB(>Ø)Š
i − u characteristics : ÏSA5
reverse recovery time : ‡•¡Ežm
fast-recovery diode : ¯„¡E 4+
Schottky diodes : AÄ 4+
phase control : ƒ›
voltage rating : ½>Ø
current rating : ½>6
in series : Gé
in parallels : ¿é
latched on : µ£; £4
specified in : 5(()½; L«(... ag)
rate-of-rise of voltage : >Øþ,Ç
power transmission : >åDÑ
wafer diameter : Ä¡†»
light-actived-thyristor : 1>u¬¹+
reverse-conducting-thyristors : _ .¬¹+
circuit-commutated-recovery time : >´†6¡Ežm
schematic : «¿5
Thanks!
Email: yinghuzhangyong@163.com