HiPerFASTTM IGBT IXGH 32N60C VCES = 600 V

LightspeedTM Series IXGT 32N60C IC25 = 60 A

VCE(sat)typ = 2.1 V
tfi typ = 55 ns

Symbol Test Conditions Maximum Ratings TO-268

(IXGT)
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G
E C (TAB)
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 60 A TO-247 AD
IC110 TC = 110°C 32 A (IXGH)
ICM TC = 25°C, 1 ms 120 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A C (TAB)
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 VCES G
C
E
PC TC = 25°C 200 W
G = Gate, C = Collector,
TJ -55 ... +150 °C
E = Emitter, TAB = Collector
TJM 150 °C
Tstg -55 ... +150 °C
Features
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s • International standard packages
Md Mounting torque (M3) 1.13/10 Nm/lb.in. JEDEC TO-247 and surface
mountable TO-268
Weight TO-247 AD 6 g • High current handling capability
TO-268 4 g • Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity

Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) • PFC circuits
min. typ. max. • Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
BVCES IC = 250 mA, VGE = 0 V 600 V power supplies
• AC motor speed control
• DC servo and robot drives
VGE(th) IC = 250 mA, VCE = VGE 2.5 5 V • DC choppers
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 150°C 1 mA Advantages
IGES VCE = 0 V, VGE = ±20 V ±100 nA
• High power density
VCE(sat) IC = IC110, VGE = 15 V 2.1 2.5 V • Very fast switching speeds for high
frequency applications

IXYS reserves the right to change limits, test conditions, and dimensions. 97538B (7/00)
© 2000 IXYS All rights reserved 1-4
 IXGH 32N60C
IXGT 32N60C

Symbol Test Conditions Characteristic Values

TO-247 AD (IXGH) Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.

gfs IC = IC110; VCE = 10 V, 25 S

Pulse test, t £ 300 ms, duty cycle £ 2 %

C ies 2700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 190 pF
C res 50 pF

Qg 110 nC
Qge IC = IC110, VGE = 15 V, VCE = 0.5 VCES 22 nC
Qgc 40 nC

td(on) Inductive load, TJ = 25°C 25 ns

Dim. Millimeter Inches
t ri IC = IC110, VGE = 15 V, L = 100 mH, 20 ns Min. Max. Min. Max.

td(off) VCE = 0.8 VCES, RG = Roff = 4.7 W 85 ns A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
tfi Remarks: Switching times may 55 ns C 15.75 16.26 0.610 0.640
increase for VCE (Clamp) > 0.8 • VCES, D 3.55 3.65 0.140 0.144
Eoff higher TJ or increased RG 0.32 mJ
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
td(on) Inductive load, TJ = 150°C 25 ns
G 1.65 2.13 0.065 0.084
t ri IC = IC110, VGE = 15 V, L = 100 mH 25 ns H - 4.5 - 0.177
Eon VCE = 0.8 VCES, RG = Roff = 4.7 W 0.30 mJ J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
td(off) 110 170 ns
Remarks: Switching times may L 4.7 5.3 0.185 0.209
tfi increase for VCE (Clamp) > 0.8 • VCES, 105 160 ns M 0.4 0.8 0.016 0.031

Eoff higher TJ or increased RG 0.85 1.25 mJ N 1.5 2.49 0.087 0.102

RthJC 0.62 K/W

RthCK (IXGH32N60C) 0.25 K/W

TO-268AA (D3 PAK) Dim. Millimeter Inches

Min. Recommended Footprint
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A1 2.7 2.9 .106 .114
A2 .02 .25 .001 .010
b 1.15 1.45 .045 .057
b2 1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E1 13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 2-4
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IXGH 32N60C
IXGT 32N60C

100 200
VGE = 15V TJ = 25°C
TJ = 25°C 9V
11V VGE = 15V
13V 13V 11V
80 160

IC - Amperes
IC - Amperes

60 120
9V

40 80
7V
7V
20 40

5V 5V
0 0
0 1 2 3 4 5 0 2 4 6 8 10

VCE - Volts VCE - Volts

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

100 1.50
TJ = 125°C VGE = 15V 11V
9V VGE = 15V
80 13V IC = 64A
VCE (sat) - Normalized
1.25
IC - Amperes

60
IC = 32A
1.00
7V
40
IC = 16A

0.75
20
5V

0 0.50
0 1 2 3 4 5 25 50 75 100 125 150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of VCE(sat)

100 10000
VCE = 10V
Ciss f = 1Mhz
80
Capacitance - pF

1000
IC - Amperes

60
Coss

40
100 Crss
TJ = 125°C

20
TJ = 25°C
0 10
3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40

VGE - Volts VCE-Volts

Fig. 5. Admittance Curves Fig. 6. Capacitance Curves

© 2000 IXYS All rights reserved 3-4

 IXGH 32N60C
IXGT 32N60C

1.00 4 4 8
TJ = 125°C TJ = 125°C
E(OFF)
RG = 10

IC = 64A

E(OFF) - milliJoules
0.75 3 3 6

E(OFF) - millijoules
E(ON) - millijoules
E(ON) - millijoules

E(ON)
E(ON) E(OFF)

0.50 2 2 4

E(ON)
IC = 32A E(OFF)
0.25 1 1 2

E(ON) IC = 16A
E(OFF)
0.00 0 0 0
0 20 40 60 80 0 10 20 30 40 50 60

IC - Amperes RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC. Fig. 8. Dependence of EON and EOFF on RG.

16 100
64
IC = 32A
VCE = 300V
12 TJ = 125°C
10
RG = 4.7

IC - Amperes
VGE - Volts

dV/dt < 5V/ns

8

1
4

0 0.1
0 25 50 75 100 125 0 100 200 300 400 500 600

Qg - nanocoulombs VCE - Volts

Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area

D=0.5

D=0.2
0.1 D=0.1
ZthJC (K/W)

D=0.05
D=0.02
D=0.01
0.01 D = Duty Cycle

Single pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Seconds

Fig. 11. Transient Thermal Resistance

© 2000 IXYS All rights reserved 4-4