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SOIC-8
G G
S
S
S
S
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 36 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 62 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 18 24 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
60 15
10V 6V
50
12 VDS=5V
40
4.5V 9
ID (A)
ID(A)
30
6 125°C
20 VGS=3.5V
10 3
25°C
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
40 1.8
VGS=10V
Normalized On-Resistance
35
VGS=4.5V 1.6
30
Ω)
RDS(ON) (mΩ
1.4 VGS=4.5V
25
1.2
20
VGS=10V
15 1
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
60 1.0E+01
ID=10A
50 1.0E+00
1.0E-01
Ω)
RDS(ON) (mΩ
40 125°C
IS (A)
1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04
25°C
10
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics
10 600
VDS=15V
ID=10A 500
8
Ciss
Capacitance (pF)
400
VGS (Volts)
6
300
4
200
Coss
2
100
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
100.0
In descending order
TA=25°C, 100°C, 125°C, RDS(ON) 10µs
IA, Peak Avalanche Current (A)
limited
10.0
100µs
ID (Amps)
50
TJ(Max)=150°C
40 TA=25°C
Power (W)
30
20
10
0
0.0001 0.01 1 100
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
RθJA=75°C/W
Thermal Resistance
0.1
PD
Single Pulse Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance
Vgs
Qg
+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+
Vgs VDC Vdd
Rg -
10%
t on t off
Id Vds
Vgs +
Vgs VDC Vdd I AR
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs