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Graphite monolayers

Edward McCann

Lancaster University, UK

with
S. Bailey, K. Kechedzhi, V.I. Fal’ko,
H. Suzuura, T. Ando,
B.L. Altshuler
Graphite

Three dimensional layered material


with hexagonal 2D layers [shown here
with Bernal (AB) stacking]
Graphite Monolayer

Two dimensional material;


zero gap semiconductor;
Dirac spectrum of electrons

Three dimensional layered


material with hexagonal 2D
layers [shown here with
Bernal (AB) stacking]
Graphite Monolayer

Two dimensional material;


zero gap semiconductor;
Dirac spectrum of electrons

Bilayer

Three dimensional layered


material with hexagonal 2D
layers [shown here with
Bernal (AB) stacking]

Bilayer as a 2D material
Low energy Hamiltonian= ?
Graphite Bilayer Monolayer

Two dimensional material;


zero gap semiconductor;
Two dimensional material; Dirac spectrum of electrons
Low energy Hamiltonian?

Fabricated two years ago by Manchester group,


Three dimensional layered Novoselov et al, Science 306, 666 (2004).
material with hexagonal 2D
layers [shown here with
Further reports of quantum Hall effect measurements;
Bernal (AB) stacking]
Manchester group: Novoselov et al, Nature 438, 197 (2005)
Columbia group: Zhang et al, Nature 438, 201 (2005).
Graphite Bilayer Monolayer

Two dimensional material;


zero gap semiconductor;
Two dimensional material; Dirac spectrum of electrons
Low energy Hamiltonian?

Lecture Overview
Three dimensional layered
material with hexagonal 2D
layers [shown here with
1) Tight binding model of monolayer graphene
Bernal (AB) stacking]
2) Expansion near the K points: chiral quasiparticles
and Berry phase

3) Bilayer graphene

4) Quantum Hall effect


1 Tight binding model of monolayer graphene

“Physical Properties of
Carbon Nanotubes”
R Saito, G Dresselhaus and
MS Dresselhaus;
Imperial College Press, 1998
1 Tight binding model of monolayer graphene
1.1 sp2 hybridisation
Carbon has 6 electrons
- 2 are core electrons
- 4 are valence electrons – one 2s and three 2p orbitals
1 Tight binding model of monolayer graphene
1.1 sp2 hybridisation
Carbon has 6 electrons
- 2 are core electrons
- 4 are valence electrons – one 2s and three 2p orbitals

sp2 hybridisation
- single 2s and two 2p orbitals hybridise forming three “s
bonds” in the x-y plane
1 Tight binding model of monolayer graphene
1.1 sp2 hybridisation
Carbon has 6 electrons
- 2 are core electrons
- 4 are valence electrons – one 2s and three 2p orbitals

sp2 hybridisation
- remaining 2pz orbital [“p” orbital] exists perpendicular to
the x-y plane

only p orbital relevant for energies of interest for transport


measurements – so keep only this one orbital per site in the
tight binding model
1 Tight binding model of monolayer graphene
1.2 lattice of graphene

2 different ways of
orienting bonds means
there are 2 different types
of atomic sites
[but chemically the same]
1 Tight binding model of monolayer graphene
1.2 lattice of graphene

2 different atomic sites – 2 triangular sub-lattices


1 Tight binding model of monolayer graphene
1.3 reciprocal lattice

triangular reciprocal lattice

– hexagonal Brillouin zone


1 Tight binding model of monolayer graphene
1.4 Bloch functions

We take into account one p orbital per site, so there


are two orbitals per unit cell.

 
 
 

N  
1
Bloch functions A k,r 
N
e

RA
ik . R A
 A r  RA

 
 
 

N  
1
B k , r 
N
e

RB
ik . RB
 B r  RB

sum over all type atomic


B atomic sites wavefunction
in N unit cells
1 Tight binding model of monolayer graphene
1.4 Bloch functions

We take into account one p orbital per site, so there


are two orbitals per unit cell.

Bloch functions : label with j = 1 [A sites] or 2 [B sites]

 
 
  

N  
1
 j k,r  e  j r  Rj
ik . R j

N Rj

sum over all type atomic


j atomic sites wavefunction
in N unit cells
1 Tight binding model of monolayer graphene
1.5 Secular equation
Eigenfunction j (for j = 1 or 2) is written as a linear
combination of Bloch functions:

 
 
  
  
2
 j k , r   C jj ' k  j ' k , r
j '1

Eigenvalue Ej (for j = 1 or 2) is written as :


j H j


Ej k 
j j
1 Tight binding model of monolayer graphene
1.5 Secular equation
Eigenfunction j (for j = 1 or 2) is written as a linear
combination of Bloch functions:

 
    
  
2
 j k , r   C jj ' k  j ' k , r
j '1

Eigenvalue Ej (for j = 1 or 2) is written as :


j H j


Ej k 
j j
2 2

C *
C jl  i H  l H C *ji C jl


substitute ji il

expression in terms Ej k  i ,l
2
 i ,l
2
of Bloch functions C i ,l
*
ji C jl  i  l S C
i ,l
il
*
ji C jl

defining transfer H   H  ; and overlap Sil  i l


il i l
integral matrix integral matrix
elements elements
1 Tight binding model of monolayer graphene
1.5 Secular equation 2

H C *
C jl

 il ji

Ej k  i ,l
2

 il ji C jl
S
i ,l
C *
1 Tight binding model of monolayer graphene
1.5 Secular equation 2

H C *
C jl


il ji

Ej k  i ,l
2

 il ji C jl
S
i ,l
C *

If the H il and S il are known, we can find the energy by minimising


with respect to C *jm :
2 2 2

E j H ml C jl H C il
*
ji C jl  S ml C jl
 l
 i ,l l

C *jm 2
 2 
2

S C il
*
ji C jl   Sil C *ji C jl 
i ,l
 i ,l 

E j 2 2

C *
0  H
l 1
ml C jl  E j  S ml C jl
l 1
jm
1 Tight binding model of monolayer graphene
1.5 Secular equation
2 2

H
l 1
ml C jl  E j  S ml C jl
l 1
1 Tight binding model of monolayer graphene
1.5 Secular equation
2 2

H
l 1
ml C jl  E j  S ml C jl
l 1

Explicitly write out sums:


m  1  H11C j1  H12C j 2  E j S11C1l  S12C2l 
m  2  H 21C j1  H 22C j 2  E j S 21C1l  S 22C2l 
1 Tight binding model of monolayer graphene
1.5 Secular equation
2 2

H
l 1
ml C jl  E j  S ml C jl
l 1

Explicitly write out sums:


m  1  H11C j1  H12C j 2  E j S11C1l  S12C2l 
m  2  H 21C j1  H 22C j 2  E j S 21C1l  S 22C2l 

Write as a matrix equation:


 H11 H12  C j1  S S12  C j1 
    E j  11  
 H 21 H 22  C j 2   S 21 S 22  j 2 
C

HC j  E j SC j
1 Tight binding model of monolayer graphene
1.5 Secular equation
2 2

H
l 1
ml C jl  E j  S ml C jl
l 1

Explicitly write out sums:


m  1  H11C j1  H12C j 2  E j S11C j1  S12C j 2 
m  2  H 21C j1  H 22C j 2  E j S 21C j1  S 22C j 2 

Write as a matrix equation:


 H11 H12  C j1  S S12  C j1 
    E j  11  
 H 21 H 22  C j 2   S 21 S 22  j 2 
C

HC j  E j SC j
Secular equation gives the eigenvalues:
det H  ES   0
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
 
 
  

N  
1
H ij   i H  j ; Sij   i  j  j k,r  e  j r  Rj
ik . R j

N Rj
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
 
 
  

N  
1
H ij   i H  j ; Sij   i  j  j k,r  e  j r  Rj
ik . R j

N Rj

Diagonal matrix element


1 N N ik.R Aj  R Ai 
H AA   A H  A  
N R Ai R Aj
e   
  
 A r  RAi H  A r  RAj 
Same site only:
1 N
H AA   
N RAi

 
 
 
 A r  RAi H  A r  RAi 

 
 
 
  A r  RAi H  A r  RAi 
 0
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
 
 
  

N  
1
H ij   i H  j ; Sij   i  j  j k,r  e  j r  Rj
ik . R j

N Rj

Diagonal matrix element


1 N N ik.R Aj  R Ai 
H AA   A H  A  
N R Ai R Aj
e  
  
 A r  RAi H  A r  RAj 
Same site only:
1 N
H AA   
N RAi
 
   

 A r  RAi H  A r  RAi 

 
 

  A r  RAi H  A r  RAi 
 0
A and B sites are chemically identical:

H AA  H BB   0
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
 
 
  

N  
1
H ij   i H  j ; Sij   i  j  j k,r  e  j r  Rj
ik . R j

N Rj

Diagonal matrix element


1 N N ik.R Aj  R Ai 
H AA   A H  A  
N R Ai R Aj
e  
  
 A r  RAi H  A r  RAj  
Same site only:
    
   
  
N
    1
1 N
H AA   
 A r  RAi H  A r  RAi S AA 
N


 A r  RAi  A r  RAi
N RAi R Ai


 
 

  A r  RAi H  A r  RAi  
   
 
  A r  RAi  A r  RAi 
 0 1

A and B sites are chemically identical:

H AA  H BB   0 S AA  S BB  1
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element
 
  
  

N N   
1
 e
ik . RBj  R Ai
H AB   A H  B   
 A r  RAi H  B r  RBj
N R Ai RBj
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element
 
  
  

N N   
1
 e
ik . RBj  R Ai
H AB   A H  B   
 A r  RAi H  B r  RBj
N R Ai RBj

Every A site has 3 B nearest neighbours:


  a   a a 
1  RB1  RAi   0,  ;  2  RB 2  RAi   , ;
 3  2 2 3
  a a 
 3  RB 3  RAi    , 
 2 2 3 
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element
 
 
 
 

N N   
1
 e
ik . RBj  R Ai
H AB   A H  B   
 A r  RAi H  B r  RBj
N R Ai RBj

Every A site has 3 B nearest neighbours:


  a   a a 
1  RB1  RAi   0,  ;  2  RB 2  RAi   , ;
 3  2 2 3
  a a 
 3  RB 3  RAi    , 
 2 2 3 

1 N  3 ik. j  3 ik. j
H AB  

N RAi  j 1
e   
  

 A r  RAi H  B r  RBj  
e   
 
 
 A r  RAi H  B r  RBj 
  j 1
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element
 
  
 
 

N N   
1
 e
ik . RBj  R Ai
H AB   A H  B   
 A r  RAi H  B r  RBj
N R Ai RBj

Every A site has 3 B nearest neighbours:


  a   a a 
1  RB1  RAi   0,  ;  2  RB 2  RAi   , ;
 3  2 2 3
  a a 
 3  RB 3  RAi    , 
 2 2 3 

1 N  3 ik. j  3 ik. j
H AB 

N RAi  j 1
e   
  

 A r  RAi H  B r  RBj
 e
 
  
 A r  RAi H  B r  RBj    
  j 1
Parameterise nearest neighbour transfer integral:

 
   

 0    A r  RAi H  B r  RBj

f k ; f k    e
  3  
ik . j
 H AB   0 
 j 1
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element
 
  
  
 
N N   
1
 e
ik . RBj  R Ai
H AB   A H  B   
 A r  RAi H  B r  RBj
N R Ai RBj

Every A site has 3 B nearest neighbours:


  a   a a 
1  RB1  RAi   0,  ;  2  RB 2  RAi   , ;
 3  2 2 3
  a a 
 3  RB 3  RAi    , 
 2 2 3 

1 N  3 ik. j  3 ik. j
H AB  

N RAi  j 1
e  
  
 A r  RAi H  B r  RBj  
e     

 A r  RAi H  B r  RBj   
  j 1
Parameterise nearest neighbour transfer integral:

 
   
 0    A r  RAi H  B r  RBj     
s   A r  RAi  B r  RBj    


  

3  
f k 
ik . j
 H AB   0 f k ; 
e  S AB  s f k
 j 1
1 Tight binding model of monolayer graphene
1.6 Calculation of transfer and overlap integrals
Off-diagonal matrix element

  a   a a 
1  RB1  RAi   0,  ;  2  RB 2  RAi   , ;
 3  2 2 3
  a a 
 3  RB 3  RAi    , 
 2 2 3



 
3  
f k 
ik . j ik y a / 2 3
  2e
ik y a / 3 kxa

e e cos 2
 j 1
1 Tight binding model of monolayer graphene
1.7 Calculation of energy
 0
H  


0 f k  
; S   1   
sf k


0 f k
*

 0   
 sf * k 1 

1 Tight binding model of monolayer graphene
1.7 Calculation of energy
 0
H  

0 f k   
; S   1  sf k

 
0 f k
*

  0   sf * k
  1 

Secular equation gives the eigenvalues:


det H  ES   0


det 
0  E  
  0  Es  f k 
 0

   0  Es  f k
*

0  E 

  2
E   0    0  Es  f k  0
2 2
1 Tight binding model of monolayer graphene
1.7 Calculation of energy
 0
H  

0 f k   
; S   1  sf k

 
0 f k
*

  0   sf * k
  1 

Secular equation gives the eigenvalues:


det H  ES   0


det 
0  E  
  0  Es  f k 
 0

   0  Es  f k
*

0  E 

  2
E   0    0  Es  f k  0
2 2

0   0 f k


E
1 s f k


1 Tight binding model of monolayer graphene
1.7 Calculation of energy
0   0 f k

 Typical parameter values [quoted in Saito et al]:
E
1 s f k

  0  0 ,  0  3.033eV , s  0.129



f k e y
ik a / 3
 2e
 ik y a / 2 3
cos  
kxa
2
2 Expansion near the K points
2.1 Exactly at the K point

  a  
1   0, ;  K .1  0
 3
  4p   a
 2   ,
a   2p
 ;  K . 2 
K  ,0  2 2 3 3
 3a    a a   2p
 3    ,  ;  K . 3  
 2 2 3 3

 
 3  
f K 
iK . j 2pi / 3  2pi / 3

e  e 0
 e  e 0
 j 1

At the corners of the Brillouin zone (K points),


electron states on the A and B sub-lattices
decouple and have exactly the same energy

K points also referred to as “valleys”


Show 3d band structure
2 Expansion near the K points
2.1 Exactly at the K point

6 corners of the Brillouin zone (K points),


but only two are non-equivalent

We consider two K points with the


K K’ following wave vectors:
b1
  4p    4p 
K  ,0  ; K '    ,0 
b2  3a   3a 
K K’
2 Expansion near the K points
2.2 Linear expansion
Consider two non-equivalent K points:
   4p 
K, K'  ,0  ;   1
 3a 
p and small momentum near them:

  4p  p
k   ,0  
 3a  
2 Expansion near the K points
2.2 Linear expansion
Consider two non-equivalent K points:
   4p 
K, K'  ,0  ;   1
 3a 
p and small momentum near them:

  4p  p
k   ,0  
 3a  

Linear expansion in small momentum: 



f k 
3a
2
px  ip y   O pa /  2

H  
0


0 f k  
  v
0 p x  ip y 

0 f k
*

 0   p x  ip y 0 

 1
S   * 
sf k

    1
0
 
 spa 
  3a 0

 sf k 1  0 1
  
O
  
v
2
 106 m / s
2 Expansion near the K points
2.2 Linear expansion

H  
0


0 f k  
  v
0 p x  ip y 

0 f k
*

 0   p x  ip y 0 

 1
S   * 
sf k

    1
0
 
 spa 
 
3a 0

 sf k 1  0 1
  
O
  
v
2
 106 m / s

New notation for  C j1   A 


components on A 
Cj        

and B sites C j2   B 

 0 px  ip y  A   
1
S HC j  E j C j 
 v    E  A 

 p x  ip y 0  B   B 
2 Expansion near the K points
2.3 Dirac-like equation
For one K point (e.g. =+1) we have a 2 component wave function,
 
   A 
 B 
with the following effective Hamiltonian:

 0 p x  ip y   0 p  
  vs x px  s y p y   vs . p
 
H  v   v
 p x  ip y 0   p 0 

Bloch function amplitudes on


the AB sites (‘pseudospin’)
mimic spin components of
a relativistic Dirac fermion.
2 Expansion near the K points
2.3 Dirac-like equation
To take into account both K points (=+1 and =-1) we can use a 4
component wave function,
 AK 
 
 
   BK 

 AK ' 
 
 BK ' 
with the following effective Hamiltonian:
 0 p x  ip y 0 0 
 
 p x  ip y 0 0 0 
H  v
0 0 0  p x  ip y 
 
 0 0  p x  ip y 0 
 
2 Expansion near the K points
2.3 Dirac-like equation

Helical electrons
0 p  
   
H  v   vs  p  vp s  n
pseudospin direction
 is linked to an axis
p 0  determined by
electronic momentum.

E  vp  for conduction band


p
 electrons,
s n 1
py px
 
 s  n  1
p valence band (‘holes’)
Show 3D picture
2 Expansion near the K points
2.4 Absence of backscattering
0 p  0 e i   e  i / 2


H  v 
  vp i ; E  vp      2  i / 2 
1 

p 0  e 0  e 
2 Expansion near the K points
2.4 Absence of backscattering
0 p  0 e i   e  i / 2


H  v 
  vp i ; E  vp      2  i / 2 
1 

p 0  e 0  e 

angular scattering probability:

      0  cos 2  / 2
2

=0 under pseudospin conservation,


helicity suppresses
backscattering in a monolayer
 Klein paradox
 Show angular dependence
2 Expansion near the K points
2.5 Berry’s phase p
Show Dirac belt
Show definition of Berry phase
Monolayer graphene

0 p  0 e  i 
H  v   vp i
 e
;
 p 0   0 
 e  i / 2

E  vp      2  i / 2 
1 

e 

massless Dirac fermions


with Berry’s phase p
3. Bilayer graphene [Bernal (AB) stacking]
3. Bilayer graphene [Bernal (AB) stacking]
3. Bilayer graphene [Bernal (AB) stacking]
p  px  ip y
3 Bilayer graphene
Berry phase 2p quasiparticles

H 
1  0 p     p
 2  0
2
 2 i
e 2i 
; E
p2 
1 
e  i
     2  i 

2m  p 2 0  2m  e 0  2m e 
3 Bilayer graphene
Berry phase 2p quasiparticles

H 
1  0 p     p
 2  0
2
 2 i
e 2i 
; E
p2 
1 
e  i
     2  i 

2m  p 2 0  2m  e 0  2m e 

No absence of backscattering
angular scattering probability:

      0  cos 2  
2

=0

no suppression of
backscattering in a bilayer
Some topics in graphene physics

1) Integer Quantum Hall effect


unusual sequencing of Hall conductivity plateaus

2) Minimal conductivity
see talks this afternoon: Jakub Tworzdlo; Jozsef Cserti

3) Tunnelling of chiral quasiparticles


MI Katsnelson, KS Novoselov, and AK Geim, cond-mat/0604343;
VV Cheianov and VI Falko, PRB 74, 041403

4) Weak localisation (?)


H Suzuura and T Ando, PRL 89, 266603 (2002); SV Morozov et al,
PRL 97, 016801 (2006); DV Khveshchenko; AF Morpurgo and F
Guinea; E McCann et al [all cond-mat 2006]

5) Andreev reflection
see talk this afternoon: Carlo Beenakker
Integer Quantum Hall effect
in a 2d semiconductor

Each filled Landau level


with additional degeneracy
g contributes conductance
quantum ge2/h towards the
Hall conductivity
3 Integer quantum Hall effect
Graphene monolayer

Monolayer
Quantum
Hall effect:
4e2/h steps

Novoselov et al, Nature 438, 197 (2005);


Zhang et al, Nature 438, 201 (2005).
Landau levels and QHE

   
p  i  c A, rotA  Bl z
e

p  px  ip y ; p   px  ip y
Show super-symmetry
Get HO and take sqrt.
Check Ezawa
Check McLure
2D Landau levels
  
of chiral electrons
J=1 monolayer
J=2 bilayer
0   J 1 
p 0  ...  p  J 1  0
J J
 ,...,      0
0  0  valley
index

 0
 p 
 J  A
 ~


p J 0  B 
  J  B
  
~
also, two-fold real  0  p  
  p J 0  A  
spin degeneracy

 4-fold degenerate zero-energy
Landau level for electrons
with Berry’s phase p
J.McClure, Phys. Rev. 104, 666 (1956)
F.Haldane, PRL 61, 2015 (1988)
Y.Zheng and T.Ando,
Phys. Rev. B 65, 245420 (2002)
V.P. Gusynin and S.G. Sharapov,
Phys. Rev. Lett 95, 146801 (2005)
N.M.R. Peres, F. Guinea and A.H. Castro Neto,
PRB 73, 125411 (2006)


8-fold degenerate zero-energy
Landau level for electrons
with Berry’s phase 2p
E.McCann and V.I. Fal’ko,
Phys. Rev. Lett. 96, 086805 (2006)
QHE in graphene

monolayer bilayer
4 a 4
c
3 3
2 2
sxy (4e2/h)

sxy (4e2/h)
1 1
0 0
-1 -1
-2 -2
-3 -3
-4 -4

E 1L graphene E 2L graphene
6 6

xx (k)
xx (k)

4 p 4 p

2 2
b d

0 0
-4 -2 0 2 4 -4 -2 0 2 4
n (1012 cm-2) n (1012 cm-2)

Unconventional Quantum Hall Effect and Berry’s Phase of 2π in Bilayer Graphene


K.Novoselov, E.McCann, S.Morozov, V.Fal’ko, M.Katsnelson, U.Zeitler, D.Jiang, F.Schedin, A.Geim
Nature Physics 2, 177-180 (2006)



Summary

Graphene monolayer – 2D electron system


with Berry phase π quasiparticles and 4 times degenerate
zero-energy Landau levels manifested in the quantum Hall effect.

Graphene bilayer – 2D electron system


with Berry phase 2π quasiparticles and 8 times degenerate
zero-energy Landau levels manifested in the quantum Hall effect.
The End

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