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IRFP4332PbF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass

IRFP4332PbF

Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low Q G for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

 

V DS min

250

V

V DS (Avalanche) typ.

300

V

R DS(ON) typ. @ 10V

29

m

T J max

175

°C

D G S
D
G
S
D D G
D
D
G

S

TO-247AC

GDS

Gate

Drain

Source

Description HEXFET ® Power MOSFET MOSFET MOSFET MOSFET

Absolute Maximum Ratings

 

Parameter

Max.

Units

V GS

Gate-to-Source Voltage

±30

V

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

57

A

I D @ T C = 100°C

Continuous Drain Current, V GS @ 10V

40

 

I DM

Pulsed Drain Current

230

I RP @ T C = 100°C

Repetitive Peak Current

120

P D @T C = 25°C

Power Dissipation

360

W

P D @T C = 100°C

Power Dissipation

180

 

Linear Derating Factor

2.4

W/°C

T

J

Operating Junction and Storage Temperature Range

-40 to + 175

°C

T

STG

 

Soldering Temperature for 10 seconds

300

 

Mounting Torque, 6-32 or M3 Screw

10lb in (1.1N m)

N

Thermal Resistance

 

Parameter

Typ.

Max.

Units

R θJC

Junction-to-Case

–––

0.42

 

R θCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

R θJA

Junction-to-Ambient

–––

40

Notes through are on page 9

www.irf.com

1

12/15/09

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

@ T J = 25°C (unless otherwise specified)   Parameter Min. Typ. Max. Units  
 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

BV DSS

Drain-to-Source Breakdown Voltage

250

–––

–––

V

V

GS = 0V, I D = 250µA

∆ΒV DSS /T J

Breakdown Voltage Temp. Coefficient

–––

170

–––

mV/°C

Reference to 25°C, I D = 1mA

R DS(on)

Static Drain-to-Source On-Resistance

–––

29

33

m

V

GS = 10V, I D = 35A

V GS(th)

Gate Threshold Voltage

3.0

–––

5.0

V

V

DS = V GS , I D = 250µA

V GS(th) /T J

Gate Threshold Voltage Coefficient

–––

-14

–––

mV/°C

 

I DSS

Drain-to-Source Leakage Current

–––

–––

20

µA

V

DS = 250V, V GS = 0V

–––

–––

200

µA

V

DS = 250V, V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Forward Leakage

–––

–––

100

nA

V

GS = 20V

Gate-to-Source Reverse Leakage

–––

–––

-100

V

GS = -20V

g fs

Forward Transconductance

100

–––

–––

S

V

DS = 25V, I D = 35A

Q g

Total Gate Charge

–––

99

150

nC

V

DD = 125V, I D = 35A, V GS = 10V

Q gd

Gate-to-Drain Charge

–––

35

–––

 

t st

Shoot Through Blocking Time

100

–––

–––

ns

V

DD = 200V, V GS = 15V, R G = 4.7

   

–––

520

–––

 

L

= 220nH, C= 0.3µF, V GS = 15V

E PULSE

Energy per Pulse

µJ

V

DS = 200V, R G = 5.1Ω, T J = 25°C

–––

920

–––

L

= 220nH, C= 0.3µF, V GS = 15V

V

DS = 200V, R G = 5.1Ω, T J = 100°C

C iss

Input Capacitance

–––

5860

–––

 

V

GS = 0V

C oss

Output Capacitance

–––

530

–––

pF

V

DS = 25V

C rss

Reverse Transfer Capacitance

–––

130

–––

ƒ

= 1.0MHz,

C oss eff.

Effective Output Capacitance

–––

360

–––

V

GS = 0V, V DS = 0V to 200V

L D

Internal Drain Inductance

–––

5.0

–––

nH

Between lead, 6mm (0.25in.)

D G
D
G

S

L S

Internal Source Inductance

–––

13

–––

from package and center of die contact

Avalanche Characteristics

 

Parameter

Typ.

Max.

Units

E AS

Single Pulse Avalanche Energy

–––

210

mJ

E AR

Repetitive Avalanche Energy

–––

36

mJ

V DS(Avalanche)

Repetitive Avalanche Voltage

300

–––

V

I AS

Avalanche Current

–––

35

A

Diode Characteristics

 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

I S @ T C = 25°C

Continuous Source Current (Body Diode)

–––

–––

57

 

MOSFET symbol

showing the

integral reverse p-n junction diode.

MOSFET symbol showing the integral reverse p-n junction diode.

A

I SM

Pulsed Source Current (Body Diode)

–––

–––

230

V SD

Diode Forward Voltage

–––

–––

1.3

V

T

J = 25°C, I S = 35A, V GS = 0V

t rr

Reverse Recovery Time

–––

190

290

ns

T

J = 25°C, I F = 35A, V DD = 50V

Q rr

Reverse Recovery Charge

–––

820

1230

nC

di/dt = 100A/µs

1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 5.5V 10 ≤
1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 5.5V 10 ≤
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
100
BOTTOM
5.5V
5.5V
10
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
I D
r c e,
tD
oS ur
eia
rn
C-
nt
( A-o )ru

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000 100 T J = 175°C 10 T J = 25°C 1 0.1 V DS
1000
100
T J = 175°C
10
T J = 25°C
1
0.1
V DS = 25V
≤ 60µs PULSE WIDTH
0.01
4.0
5.0
6.0
7.0
8.0
I D
r c e,
tD
oS ur
eia
rn
C-
nt
( )Αru-o

V GS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1000 L = 220nH C = 0.3µF 100°C 800 25°C 600 400 200 0 150
1000
L
= 220nH
C
= 0.3µF
100°C
800
25°C
600
400
200
0
150
160
170
180
190
200
g yE ( J)µseluprepren

V DS, Drain-to -Source Voltage (V)

Fig 5. Typical E PULSE vs. Drain-to-Source Voltage

1000 VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 5.5V 10 ≤
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
100
BOTTOM
5.5V
5.5V
10
60µs
PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
I D
r c e,
tD
rr
eia
n
C-
nt
( A-o )ru
uoS

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5 I D = 35A V GS = 10V 3.0 2.5 2.0 1.5 1.0 0.5
3.5
I D = 35A
V
GS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
20
40
60
80
100 120 140 160 180
R
a,
cetiD
S onr u-
ro
iRnO-
cn eastse
(S )noD
d(
r m la iN
eo
)z

T J , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

1000 L = 220nH C = Variable 100°C 800 25°C 600 400 200 0 100
1000
L
= 220nH
C
= Variable
100°C
800
25°C
600
400
200
0
100
110
120
130
140
150
160
170
g yE ( Jµ )seluprepren

I D, Peak Drain Current (A)

Fig 6. Typical E PULSE vs. Drain Current

1400 L = 220nH 1200 C= 0.3µF C= 0.2µF 1000 C= 0.1µF 800 600 400
1400
L = 220nH
1200
C= 0.3µF
C= 0.2µF
1000
C= 0.1µF
800
600
400
200
0
25
50
75
100
125
150
yg ( Jµ )selupreprenE

Temperature (°C)

Fig 7. Typical E PULSE vs.Temperature

10000 V = 0V, f = 1 MHZ GS C = C C C ds
10000
V
=
0V,
f
=
1
MHZ
GS
C
=
C
C
C ds SHORTED
iss
gs +
gd ,
C
=
C
rss
gd
8000
C
=
C
C
oss
ds +
gd
Ciss
6000
4000
Coss
2000
Crss
0
1
10
100
1000
iC,C
etcapa
( pna
)Fc

V DS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

60 50 40 30 20 10 0 25 50 75 100 125 150 175 I
60
50
40
30
20
10
0
25
50
75
100
125
150
175
I D
ia,
tneD
rr
n
)AC
(ru

T J , Junction Temperature (°C)

Fig 11. Maximum Drain Current vs. Case Temperature

(°C) Fig 11. Maximum Drain Current vs. Case Temperature 1000 100 = 175°C T J 10
1000 100 = 175°C T J 10 1 T J = 25°C V GS =
1000
100
= 175°C
T J
10
1
T J =
25°C
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
I SD ,
e r sve e DR
r ia n C
r ne tru
(A)

V SD , Source-to-Drain Voltage (V)

Fig 8. Typical Source-Drain Diode Forward Voltage

20 I D = 35A V DS = 200V 16 V DS = 125V V
20
I D = 35A
V DS = 200V
16
V DS = 125V
V DS = 50V
12
8
4
0
0
40
80
120
160
V
etaG,
oS ue
r-
ct
Vo
( )Vegatlo-
SG

Q G Total Gate Charge (nC)

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

1000 OPERATION IN THIS AREA LIMITED BY R DS (on) 1µsec 100 100µsec 10µsec 10
1000
OPERATION
IN
THIS AREA
LIMITED
BY R DS (on)
1µsec
100
100µsec
10µsec
10
1
Tc
= 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
I D
ntee,
rSD
Ao--r
i n ta
Curo
c
)u
(r

V DS , Drain-to-Source Voltage (V)

Fig 12. Maximum Safe Operating Area

0.40 I D = 35A 0.30 0.20 0.10 T J = 125°C T J =
0.40 I D = 35A 0.30 0.20 0.10 T J = 125°C T J =
0.40
I D = 35A
0.30
0.20
0.10
T J = 125°C
T J = 25°C
0.00
5
6
7
8
9
10
R
tia(
)no
,
ce-nrD
OruoSo
iRn-
estse
)Ω(cna
SD

V GS , Gate-to-Source Voltage (V)

Fig 13.

On-Resistance Vs. Gate Voltage

5.0 4.0 I D = 250µA 3.0 2.0 1.0 -75 -50 -25 0 25 50
5.0
4.0
I D = 250µA
3.0
2.0
1.0
-75
-50
-25
0
25
50
75
100
125
150
175
V
loshetetaG ( )VegatloVdrh
tG )h(S

T J , Temperature ( °C )

Fig 15. Threshold Voltage vs. Temperature

1000 I D TOP 8.3A 800 13A BOTTOM 35A 600 400 200 0 25 50
1000
I
D
TOP
8.3A
800
13A
BOTTOM
35A
600
400
200
0
25
50
75
100
125
150
175
E
laAseluPelgniS
hav
J)ecn
myE
(ren
g
,SA

Starting T J , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy Vs. Temperature

180 ton= 1µs 160 Duty cycle = 0.25 Half Sine Wave 140 Square Pulse 120
180
ton= 1µs
160
Duty cycle = 0.25
Half Sine
Wave
140
Square Pulse
120
100
80
60
40
20
0
25
50
75
100
125
150
175
entveitiepetR
AreakP
)C
(ur

Case Temperature (°C)

Fig 16. Typical Repetitive peak Current vs. Case temperature

1 D = 0.50 0.1 0.20 0.10 R 1 R 2 R 3 Ri (°C/W)
1
D = 0.50
0.1
0.20
0.10
R 1
R 2
R 3
Ri (°C/W)
τι (sec)
R 1
R 2
R 3
τ
0.05
J
τ C
τ J
0.069565
0.000074
τ 1
τ
τ
τ
2
3
1
τ 2
τ 3
0.172464
0.001546
0.01
0.02
Ci= τi/
Ri
0.178261
0.019117
0.01
Ci= τi/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
(
THERMAL RESPONSE )
2. Peak
Tj
= P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
seT
l Reh
erm
(a
s
nop
Z t Jh C )

t 1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

+ • • - • + - + - • • + • - •
+
-
+
-
+
-
+
-

• - • + - + - • • + • - • Driver Gate Drive
Driver Gate Drive P.W. Period D = P.W. Period V GS =10V D.U.T. I SD
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
V
GS =10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
I SD

Fig 18. for HEXFET Power MOSFETs

15V L DRIVER V DS D.U.T R G + - V DD I AS 20VV
15V
L
DRIVER
V DS
D.U.T
R G
+
-
V DD
I AS
20VV GS
0.01Ω
t p

A

Fig 19a. Unclamped Inductive Test Circuit

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF + V DS D.U.T. -
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V DS
D.U.T.
-
V GS
3mA
I G
I D

Current Sampling Resistors

Fig 20a. Gate Charge Test Circuit

I AS

V (BR)DSS t p
V (BR)DSS
t p
Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 19b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr

Fig 20b.

Gate Charge Waveform

A RG C DRIVER L VCC B Ipulse RG DUT Fig 21a. t s t
A RG C DRIVER L VCC B Ipulse RG DUT
A
RG
C
DRIVER
L
VCC
B
Ipulse
RG
DUT

Fig 21a. t st and E PULSE Test Circuit

PULSE A

PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B
PULSE A PULSE B

PULSE B

t ST Fig 21b. t st Test Waveforms
t ST
Fig 21b.
t st Test Waveforms
Fig 21c. E PULSE Test Waveforms
Fig 21c.
E PULSE Test Waveforms

Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application.

Dimensions are shown in millimeters (inches)

Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. 8
Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. 8
Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. 8
Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. 8

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information TO-247AC Lead Option- 203 All dimensions in millimeters (inches) Lead Assignments

TO-247AC Part Marking Information

TO-247AC Part Marking Information TO-247AC Lead Option- 203 All dimensions in millimeters (inches) Lead Assignments 1-

TO-247AC Lead Option- 203

All dimensions in millimeters (inches)

Lead Option- 203 All dimensions in millimeters (inches) Lead Assignments 1- Gate 2- Drain 3- Source

Lead Assignments 1- Gate 2- Drain 3- Source

Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 0.35mH, R G = 25, I AS = 35A. Pulse width 400µs; duty cycle 2%.

R θ is measured at T J of approximately 90°C.

Half sine wave with duty cycle = 0.25, ton=1µsec.

Applicable to Sustain and Energy Recovery applications.

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.

Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/2009