Proceedings of the 6th European Radar Conference
X-Band T/R Module in state-of-the-art GaN
Technology
A. Bettidi, A Cetronio, M. Cicolani, C. Costrini,C. Lanzieri, S. Maccaroni, L. Marescialli, M. Peroni, P. Romanini
SELEX Sistemi Integrati S.p.A., Via Tiburtina Km. 12,400, 00131 Rome, Italy
lmarescialli@selex-si.com
Abstract— In this paper a first iteration X-band T/R module
based on a GaN-HEMT MMIC Front-End chip-set, comprising a
power amplifier, robust low-noise amplifier and power switch
will be presented. Even though ultimate T/R module
performance cannot be achieved with current GaN-HEMT
technological maturity the impact that this technology can have
at systems level in terms of performance/cost trade-off will be
illustrated by means of a preliminary innovative module
architecture which foresees the elimination of more traditional
T/R module components such as ferrite circulator and limiter for
front-end signal routing and protection.
I. INTRODUCTION
To be competitive over conventional radars, AESA (Active
Electronically Steered Antenna) systems not only need to
fulfil the continuous demand for increased performance, but
above all must be competitive in terms of reliability and cost.
For this reason dominance in innovative T/R module
technology, the key enabling technology in AESA systems, is
of paramount importance and as such many defence
companies are developing independent capabilities to ensure
competitive edge products in this field.
The enabling technologies for the realization of the T/R
Module and more specifically, those related to the microwave
Front End section are the technologies that more than others
determine the feasibility, the performances, the reliability (due
to high number of Modules, up to 10000 T/R
Module/radiating surface), the cost and therefore the
competitiveness of the entire system. The strategic importance
of these enabling technologies arise from the fact that they are
in full evolution and as such often are not available or subject
to export restrictions. This particularly applies for GaN
(Gallium Nitride) based technologies where restriction are not
just limited to components, but are actually extended to the
base materials. GaN HEMT MMICs (Monolithic Microwave
Integrated Circuits) are strategic enabling components for
both high performance and/or wideband T/R modules and for
very high power solid state transmitter applications. In
particular the impact of GaN technology will be evidenced at
System level since it will enable reduced System size and
costs, maximization of operational bandwidth, enhancement
of detection, guidance and tracking abilities. Benefits will be
significant for several military applications such as: radar,
electronic warfare, high speed communications, multi-role and
multi-domain functions, etc.
Based on self-sufficient technological capabilities within
Selex Sistemi Integrati, for developing Phased Array radar
978-2-87487-014-9 © 2009 EuMA 258
components (i.e. GaAs/GaN Foundry, MMICs and T/R
modules Design, Microelectronics Integration and Test), L, C
and X band T/R module families of components have been
developed for new generation AESA products [1],[2],[3].
In this paper the design, realization and test of an
innovative X-Band T/R Module Front End based on available
GaN HEMT technology and utilizing the experience of GaAs
T/R Modules, shall be presented. In particular this paper will
focus on T/R Module architecture and on the evaluation of
design simulations reliability as well as on predictable major
advantages given by GaN technology application.
The presented T/R Module Front End includes the main
microwave functions, that is: power amplification of the
Transmitted signal HPA, Low noise amplification of the
Received signal LNA, output power Switch to the radiating
element for enabling Transmit or Receiving Mode functions,
all in GaN-HEMT technology.
II. GAN-BASED T/R MODULE FRONT END ARCHITECTURE
The general block diagram of a T/R Module is shown in
Figure 1.
The major functions of a T/R modules are: (i) generation of
transmit power, (ii) low-noise amplification of received signals
from the radiating element, (iii) phase-shift in transmit and
receive modes for beam steering, and (iv) variable gain setting
for aperture weighing during reception.
LNA/Limiter
E/D Mode RADIATING
RECEIVER MF Control Chip
DUPLEXER
ELEMENT
DA HPA
TRM BIAS AND CONTROL
Figure 1 - General block diagram of a T/R Module
As visible from Figure 1, the general architecture of the
Module also includes the Limiter function in order to protect
components such as Low Noise Amplifier from high power
signals, either accidental or intentional, and the Duplexer
function to allow the use of the same antenna to Transmit and
to Receive.
From recent development in the field of Microwave Integrated
Circuits based on GaN/AlGaN heterostructure epitaxy grown
on semi-insulating SiC substrates, comes the possibility to
apply this technology to design and manufacture MMIC
components for RF applications. The main objective is not
30 September - 2 October 2009, Rome, Italy
only to achieve higher performances in terms of Output Power
and Efficiency (GaN HPA MMIC) in comparison to standard
technology (i.e. GaAs), but also to make the most of their
robustness and good noise figure performance and RF power
switching.
In particular, with the introduction of robust GaN LNAs it will
be possible to eliminate the Limiter with its intrinsic insertion
losses, allowing to increase the input power level of the LNA
and an overall reduction of the receive chain noise figure.
Furthermore, with GaN T/R RF Switch, by replacing the
Circulator with a semiconductor device, the Duplexer function
should be realized with reduced size and, in a medium time
scale, at lower cost.
HPA
AM
SW RF
PM
LNA
Core Chip ( GaAs ) Front End ( GaN
Figure 2 - General block diagram of the T/R Module based on GaN
technology: in blue the Front End in GaN, in green the GaAs Core Chip for
the modulation of RF signal phase and amplitude.
In Figure 2 is reported the block diagram of the GaN based T/R
Module.
The primary advantage is the highest power density that GaN
devices can provide. This will imply that a GaN-based HPA
chip shall have a footprint that is one quarter with respect to a
GaAs-based HPA chip under the same condition of generated
power, which results in the production of a greater number of
components per single productive cycle. From the module
architecture point of view, the main consequences are: the
possibility to reduce the number of MMIC chips, the reduction
of the number of interconnections, the reduction of the
dimensions (size) of the Module itself, the simplification of the
routing of the Module.
The cost reduction of the single T/R Module can be estimated
in about 40% with respect to the equivalent module based on
GaAs technology.
The application of GaN technology in future T/R Modules
shall allow to:
• Obtain greater power performances with respect to
GaAs-based components;
• Realize greater level of integration. This approach is
relevant to evolve towards a T/R Module organized in
two main chips: the first based on GaN technology
including Front-End functionalities, and the second
based on Silicon or Silicon Germanium (SiGe)
technology for the Back-End functionalities (phase and
amplitude control, up and down conversion, A/D and
D/A conversion, direct digital conversion from and to
the Signal Processor)
III. GALLIUM NITRIDE TECHNOLOGY
AlGaN/GaN HEMT is a new pacing technology mainly
targeted for high power applications at microwave and
millimetre-wave frequencies, owing to its high critical
breakdown field, its one-order of magnitude higher power
density, its saturation drift velocity and the availability of a
high thermal conductivity SiC substrate [4]. Apart from their
exceptional power performance [5]-[6], GaN HEMTs are
promising candidates for robust low-noise applications due to
their low-noise performance combined to their high power
handling capability, that provides large advantages in terms of
linearity and robustness [7].
Although some possibility for RF switching devices has
been investigated, there have been few studies to date on the
use of GaN high electron mobility transistors (HEMTs) for
high power microwave and RF control applications [8], [9].
For this applications low-loss/high power RF switches are
necessary, especially for multifunction antenna systems where
a single aperture is used to serve multiple applications by
simply switching between transmission and receive channels
of the component.
The AlGaN/GaN MMICs reported in this paper have been
)
fabricated with the current SELEX Sistemi Integrati GaN-
HEMT MMIC technology. Said process is based on an epi-
layer structure of GaN/AlGaN/GaN deposited on semi
insulating SiC substrates by either MOCVD or MBE
techniques. The mask levels for MMIC fabrication are based
on a mix and match procedure utilising both I-Line Stepper
and Electron Beam Lithography (EBL) processes. The latter
used only for the fabrication of the high resolution quarter
micron Gate dimensions necessary for the HEMT devices.
IV. GAN-BASED T/R MODULE FRONT END DESIGN AND
PERFORMANCES
The main objective of the design of the GaN-based T/R
Module was to approach the new available GaN MMICs
technology, the evaluation of Module design methodology in
relation with needed dc bias levels, thermal management and
new duplexer configuration. The available CPW MMICs
characteristics are the result of a first design and technology
iteration whose input requirements were technology driven
and could not consider T/R Module target performance.
As regards packaging solution for T/R Modules, generally
there are different technologies available, with different levels
of integration. For present application the chosen packaging
technology solution is the LTCC. This technology allows an
Integrated Single Package (ISP) approach based on a
Multilayer Ceramic substrate: by simply brazing a proper
metal frame and a cover lid it can afford the required
hermeticity. Moreover, the assembly and packaging of the RF
MMICs and related bias and control circuitry requires a
certain number of interconnections and as such for this
section multi-layer substrates such as LTCC/HTCC are
259
attractive to minimize both module footprint and coupling preliminary results (Figure 5), that they are in line with the
between microwave and control signals. expected behaviour.
Starting from the block diagram shown in Figure 2, the
design of the complete T/R module has been performed using
the said approach.
It must be underlined that, in order to achieve the desired
HPA compression level, a GaAs driver amplifier has been
included in the Transmitting path. The phase and amplitude
modulation is performed by a multifunction GaAs Core Chip
working in X Band.
As anticipated above, the Front End includes available
Monolithic Microwave Integrated Circuits (MMICs) designed
in Coplanar Wave (CPW) configuration in the band 9÷10
GHz. In the meantime promising results have been also
obtained with Selex Sistemi Integrati Foundry Micro-strip
(MS) technology[10][11]. For this reason the integration of a Figure 3 – Photograph of the GaN MMIC X band chip-set
10 watt MS GaN HPA (instead of the CPW chip) has been
chosen as a better chance to test the Front End performances.
The power amplification of the transmitted signal is
performed by a two stage amplifier with a total gate periphery
of 6 mm (2mm gate width for the first stage and 4mm of gate
width for the output stage) fabricated using a 0.5 μm gate-
length process. The HPA Output Power is about 40 dBm
when biased with 20 volt of Drain Voltage, with an associated
Gain of 14 dB @3dB Compression point. By increasing drain
bias up to 35 volt the MS HPA can provide 20 watt of Output Figure 4 – Photograph of the fully integrated GaN-based T/R Module: size 45
Power. mm x 15.5 mm .
The Low Noise Amplification of the received signal is
performed by a three-stage amplifier with a total gate
periphery of 1.2 mm yielding a NF performance better than
2.5 dB and an associated gain of 16 dB respectively.
The Duplexer function is performed by a T/R switch using
a non reflective SPDT configuration with shunt FETs to
enable high power handling capabilities. The T/R switch
shows an I.L. < 2 dB, Isolation>40 dB and ports matching >10
dB on the operative bandwidth. The input Power @1dB
compression point of the T/R switch is better than 37 dBm
@10 GHz.
In Figure 3 the photograph of the X Band GaN chip-set is
shown. Figure 5 – Output Power behaviour (under compression) in the bandwidth,
Design activity showed that the Output Power of the as measured on the GaN HPA output on the T/R Module.
module turned out to be limited by the T/R Switch 1dB
compression point and related Insertion Losses. For this The complete characterisation of the T/R Module, both in
reason levels less than 33.6 dBm are expected. The future Tx and Rx mode, has been obtained using a dedicated test jig
requirements for the SPDT 1 dB compression point must be (Figure 6). In the following figures, characterisation results
increased up to 4-5 dB more than the HPA Output Power. In are presented and briefly commented.
Receive Mode, the simulation provides a module Noise Figure
forecast better than 5.7 dB. When considering only the results
obtained with MS SPDT, in a future second iteration[12], the
Module Noise Figure shall be improved to better than 5 dB
and with further expected improvements in LNA noise-figure
(less than 2 dB) and power switch insertion loss, the overall
noise figure of the receive chain is expected to be better than 4
dB.
In Figure 4 the first iteration GaN-based T/R Module fully
integrated has been shown. It is evident from obtained
Figure 6 – Photograph of Test Jig used to evaluate the TRM

260
 V. CONCLUSIONS
Pout with PW=10us, Duty=1%, Tback=45°C, Pin=+2dBm
45
In present paper the design, realization and test of a GaN-
based X band T/R module has been presented. The main
40 aspects in terms of cost reduction, future improvements of T/R
Module products and relevant impacts on System main
Pout (dBm)

performances have been shown.

35

30
ACKNOWLEDGMENT
25
This research activity has been carried out in the
20
KORRIGAN RPT N° 102.052 Project funded within the
8.8 9 9.2 9.4 9.6 9.8 10 10.2 EUROPA framework in the CEPA 2 priority area, in the
Frequency [GHz]
Italian MIUR project on Advanced TRM Enabling
Figure 7 – Output Power behaviour of TR Module (under compression) in Technologies within the Consorzio OPTEL framework and in
the bandwidth.
FINMECCANICA R&D Corporate Project.
As expected, the output power of T/R module is actually
limited by switch performances.
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Attenuation and Phase bits exhibit the expected behaviour.

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