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Transistor Theory
Deming Chen
Reading 2.1-2.4
– Accumulation
- p-type body
– Depletion (a)
– Inversion
– Vgs = Vg – Vs Vgs
+ +
Vgd
– Vgd = Vg – Vd - -
Vgs = 0 Vgd
+ g +
- -
s d
n+ n+
p-type body
b
- -
Ids increases with Vds s d
Vds = 0
p-type body
b
Vgs > Vt
Vgs > Vgd > Vt
+ g +
- - Ids
s d
n+ n+
0 < Vds < Vgs-Vt
p-type body
b
Vgs > Vt
Vgd < Vt
+ g
+
- -
s d Ids
n+ n+
Vds > Vgs-Vt
p-type body
b
W
Vgs Vt ds Vds
V = mCox
2 L
I ds Vgs Vt dsat V
V
2 dsat
V Vt
2
2
gs
0 Vgs Vt cutoff
Vds V V V
I ds Vgs Vt ds linear
2
ds dsat
Vgs Vt Vds Vdsat saturation
2
2
2
– Vt = 0.7 V 1.5 Vgs = 4
Ids (mA)
1
– Vgs = 0, 1, 2, 3, 4, 5 0.5
Vgs = 3
Ids (mA)
mn / mp = 2
Vgs = -4
-0.6
Vgs = -5
-0.8
-5 -4 -3 -2 -1 0
Vds
polysilicon
gate
W
tox
L SiO2 gate oxide
n+ n+ (good insulator, eox = 3.9e0)
p-type body
0 Vgs Vt cutoff
Vds V V V
I ds Vgs Vt ds linear
2
ds dsat
Vgs Vt Vds Vdsat saturation
2
2
Vt Vt Vds
High drain voltage causes current to increase.
I ds
increasing
temperature
Vgs
fast
FF
– Leff: short
SF
TT
– Vt: low
pMOS
– tox: thin
FS
SS
slow
slow fast
Cycle time S S S S
Power F F F F
Subthreshold F F F S
leakage
Next lecture
– DC & Transient Response
– Readings 2.5, 4.1-4.3
I ds mCox
2
L 2 2
Velocity-saturated ON current increases with VDD
Vt
0 Vgs Vt
cutoff
I dsat Pc
a
V V
I ds I dsat ds Vds Vdsat 2
gs
linear
Vdsat Pv Vgs Vt
Vdsat a /2
I dsat Vds Vdsat saturation
– Even in saturation
L
+ L +
eff
p GND bulk Si
I ds
V Vt 1 lVds
2
2
gs
At any significant negative diode voltage, ID = -Is
Is depends on doping levels
– And area and perimeter of diffusion regions
– Typically < 1 fA/mm2 (negligible)