PD - 97646C

IRFH8337PbF
HEXFET® Power MOSFET
VDS 30 V
VGS max ± 20 V
RDS(on) max
12.8
(@VGS = 10V) mΩ
(@VGS = 4.5V) 19.9
Qg typ. 4.7 nC

i
PQFN 5X6 mm
ID
16.2 A
(@Tc(Bottom) = 25°C)

Applications
• Control MOSFET for high frequency buck converters

Features and Benefits

Features Benefits
Low Thermal Resistance to PCB (< 4.7°C/W) Enable better thermal dissipation
Low Profile (<1.2mm) results in Increased Power Density
Industry-Standard Pinout ⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability

Orderable part number Package Type Standard Pack Note

Form Quantity
IRFH8337TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8337TR2PBF PQFN 5mm x 6mm Tape and Reel 400

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 35hi
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 22hi A

16.2i
Continuous Drain Current, VGS @ 10V (Source Bonding
ID @ TC = 25°C
Technology Limited)
IDM Pulsed Drain Current c 65
PD @TA = 25°C Power Dissipation g 3.2
Power Dissipation g
W
PD @TC(Bottom) = 25°C 27
Linear Derating Factorg 0.026 W/°C
TJ Operating Junction and -55 to + 150
°C
TSTG Storage Temperature Range

Notes  through ‡ are on page 9

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Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 10.3 12.8 VGS = 10V, ID = 16.2A e
––– 15.8 19.9
mΩ
VGS = 4.5V, ID = 13A e
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 25μA
ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 31 ––– ––– S VDS = 10V, ID = 16.2A
Qg Total Gate Charge ––– 10 ––– nC VGS = 10V, VDS = 15V, ID = 16.2A
Qg Total Gate Charge ––– 4.7 –––
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.7 ––– VGS = 4.5V
nC
Qgd Gate-to-Drain Charge ––– 1.4 ––– ID = 16.2A
Qgodr Gate Charge Overdrive ––– 1.0 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 2.1 –––
Qoss Output Charge ––– 4.2 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 1.6 ––– Ω
td(on) Turn-On Delay Time ––– 6.4 ––– VDD = 15V, VGS = 4.5V
tr Rise Time ––– 12 ––– ID = 16.2A
ns
td(off) Turn-Off Delay Time ––– 5.7 ––– RG=1.8Ω
tf Fall Time ––– 4.1 –––
Ciss Input Capacitance ––– 790 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– pF VDS = 10V
Crss Reverse Transfer Capacitance ––– 69 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 28 mJ
IAR Avalanche Current c ––– 16.2 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– 16.2
(Body Diode) showing the
A G
ISM Pulsed Source Current integral reverse
––– ––– 65
(Body Diode)c p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 16.2A, VGS = 0V e
trr Reverse Recovery Time ––– 12 18 ns TJ = 25°C, IF = 16.2A, VDD = 15V
Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 390 A/μs e
ton Forward Turn-On Time Time is dominated by parasitic Inductance

Thermal Resistance
Parameter Typ. Max. Units
RθJC (Bottom) Junction-to-Case f ––– 4.7
RθJC (Top) Junction-to-Case f ––– 40 °C/W
RθJA Junction-to-Ambient g ––– 39
RθJA (<10s) Junction-to-Ambient g ––– 26

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 IRFH8337PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
7.0V 7.0V
5.0V 5.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.5V 4.5V
3.5V 3.5V
3.3V 3.3V
100 3.0V 100 3.0V
BOTTOM 2.8V BOTTOM 2.8V

10 10
2.8V

2.8V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH

Tj = 25°C Tj = 150°C
1 1
0.1 1 10 100 1000 0.1 1 10 100 1000
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 1.8
ID = 16.2A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
1.6
ID, Drain-to-Source Current (A)

100 1.4
T J = 150°C
(Normalized)

1.2

10 1.0

T J = 25°C 0.8
VDS = 15V
≤60μs PULSE WIDTH
1.0 0.6
2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

10000 14.0
VGS = 0V, f = 1 MHZ
ID= 16.2A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 12.0
VGS, Gate-to-Source Voltage (V)

VDS= 24V
C oss = C ds + C gd
10.0 VDS= 15V
C, Capacitance (pF)

1000 Ciss VDS= 6.0V

8.0
Coss
6.0
100 Crss
4.0

2.0

10 0.0
1 10 100 0 2 4 6 8 10 12 14
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRFH8337PbF
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100
100μsec
100
1msec

T J = 150°C
10
Limited by
Source Bonding
10
T J = 25°C Technology i 10msec

1
Tc = 25°C DC
Tj = 150°C
VGS = 0V Single Pulse
1.0 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

35 3.5
Limited By Source
Bonding Technology i
VGS(th), Gate threshold Voltage (V)
30 3.0

25
ID, Drain Current (A)

2.5
20
2.0
15
ID = 25μA
1.5
10 ID = 250μA
ID = 1.0mA
1.0 ID = 1.0A
5

0 0.5
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T C , Case Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case (Bottom) Temperature
10

D = 0.50
Thermal Response ( Z thJC ) °C/W

1 0.20
0.10
0.05
0.1 0.02
0.01

0.01
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

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40 120
RDS(on), Drain-to -Source On Resistance (m Ω)

EAS , Single Pulse Avalanche Energy (mJ)

ID = 16.2A ID
TOP 2.6A
100
6.1A
30
BOTTOM 16.2A
80

20 60
T J = 125°C

40
10

T J = 25°C 20

0 0
0 5 10 15 20 25 50 75 100 125 150

VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current

V(BR)DSS
tp
15V

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
I AS
20V
tp 0.01Ω

Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
-VDD
10%
V10V
GS VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on) tr td(off) tf

Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms

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IRFH8337PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Id
Vds

Vgs

L
VCC
DUT
0
1K
S
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform

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PQFN 5x6 Outline "E" Package Details

For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "E" Part Marking

INTERNATIONAL
RECTIFIER LOGO

DATE CODE

ASSEMBLY
XXXX PART NUMBER
(“4 or 5 digits”)

SITE CODE
(Per SCOP 200-002)
XYWWX MARKING CODE
(Per Marking Spec)

XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH8337PbF
PQFN 5x6 Outline "E" Tape and Reel

NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.

REEL DIMENSIONS
STANDARD OPTION (QTY 4000) TR1
TR2 OPTION (QTY 400)
METRIC IMPERIAL METRIC IMPERIAL
CODE MIN MAX MIN MAX MIN MAX MIN MAX
A 329.5 330.5 12.972 13.011 177.5 178.5 6.988 7.028
B 20.9 21.5 0.823 0.846 20.9 21.5 0.823 0.846
C 12.8 13.5 0.504 0.532 13.2 13.8 0.520 0.543
D 1.7 2.3 0.067 0.091 1.9 2.3 0.075 0.091
E 97 99 3.819 3.898 65 66 2.350 2.598
F Ref 17.4 Ref 12
G 13 14.5 0.512 0.571 13 14.5 0.512 0.571

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Qualification information†
Cons umer††
Qualification level †††
(per JE DE C JE S D47F guidelines )
MS L1
Moisture Sensitivity Level PQFN 5mm x 6mm
(per JE DE C J-S T D-020D††† )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.22mH, RG = 50Ω, IAS = 16.2A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature.
‡ Current is limited to 16.2A by source bonding technology.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2012
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