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Die-on-Die – Electronic components are built on multiple dies, which are then aligned
and bonded. Thinning and TSV creation may be done before or after bonding.
[edit] Benefits
3D ICs offer many significant benefits, including:
Footprint – More functionality fits into a small space. This extends Moore’s Law and
enables a new generation of tiny but powerful devices.
Speed – The average wire length becomes much shorter. Because propagation delay is
proportional to the square of the wire length, overall performance increases.
Power – Keeping a signal on-chip reduces its power consumption by ten to a hundred
times.[1] Shorter wires also reduce power consumption by producing less parasitic
capacitance. Reducing the power budget leads to less heat generation, extended battery
life, and lower cost of operation.
Design – The vertical dimension adds a higher order of connectivity and opens a world of
new design possibilities.
Cost - Partitioning a large chip to be multiple smaller dies with 3D stacking could
potentially improve the yield and reduce the fabrication cost. [2]
Heterogeneous integration – Circuit layers can be built with different processes, or even
on different types of wafers. This means that components can be optimized to a much
greater degree than if they were built together on a single wafer. Even more interesting,
components with completely incompatible manufacturing could be combined in a single
device[3].
Circuit security - The stacked structure hinders attempts to reverse engineer the
circuitry. Sensitive circuits may also be divided among the layers in such a way as to
obscure the function of each layer.[4]
Bandwidth - 3D integration allows large numbers of vertical vias between the layers.
This allows construction of wide bandwidth buses between functional blocks in different
layers. A typical example would be a processor+memory 3D stack, with the cache
memory stacked on top of the processor. This arrangement allows a bus much wider than
the typical 128 or 256 bits between the cache and processor. Wide buses in turn alleviate
the memory wall problem.[5]
[edit] Challenges
Because this technology is new it carries new challenges, including:
Cost - Each active plane of a 3DIC has its own 2D manufacturing cost. In the fully
stacked product, the manufacturing costs obviously add up.
Yield - Each extra manufacturing step adds a risk for defects. In order for 3D ICs to be
commercially viable, defects must be avoided or repaired[6].
Heat - Thermal buildup within the stack must be prevented or dissipated. This is an
inevitable issue as electrical proximity goes hand-in-hand with thermal proximity.
Design complexity - Taking full advantage of 3D requires intricate and elegant multi-
level designs. Chip designers will need new CAD tools to address the 3D paradigm.[7]
Lack of standards - There are currently no standards for TSV-based 3DIC packaging. In
addition, there are still many integration options which are being explored, such as via-
last, via-first, via-middle, etc.
Lack of relevance after insertion - With the use of TSVs, bandwidth and speed and
power consumption are no longer dominated by the long-distance interconnects, but by
the performance of individual discrete components on each individual chip active layer.
Any further improvements in the 3DIC package or interconnect technology will not be
obviously noticed until improvements to the various component technologies are carried
out.
[edit] References
1. ^ William J. Dally, “Future Directions for On-Chip Interconnection Networks”
page 17, http://www.ece.ucdavis.edu/~ocin06/talks/dally.pdf Computer Systems
Laboratory Stanford University, 2006
2. ^ Xiangyu Dong and Yuan Xie, "System-level Cost Analysis and Design
Exploration for 3D ICs", Proc. of Asia and South Pacific Design Automation
Conference, 2009, http://www.cse.psu.edu/~yuanxie/3d.html
3. ^ James J-Q Lu, Ken Rose, & Susan Vitkavage “3D Integration: Why, What,
Who, When?” http://www.future-fab.com/documents.asp?d_ID=4396 Future Fab
Intl. Volume 23, 2007
4. ^ "3D-ICs and Integrated Circuit Security"
http://www.tezzaron.com/about/papers/3D-
ICs_and_Integrated_Circuit_Security.pdf Tezzaron Semiconductor, 2008
5. ^ "Predicting the Performance of a 3D Processor-Memory Chip Stack" Jacob, P.,
McDonald, J.F. et al.Design & Test of Computers, IEEE Volume 22, Issue 6,
Nov.-Dec. 2005 Page(s):540 - 547
6. ^ Robert Patti, "Impact of Wafer-Level 3D Stacking on the Yield of ICs"
http://www.future-fab.com/documents.asp?d_ID=4415 Future Fab Intl. Volume
23, 2007
7. ^ "EDA's big three unready for 3D chip packaging"
http://www.eetasia.com/ART_8800485666_480300_NT_fcb98510.HTM EE
Times Asia October 25, 2007
[edit] Organizations
• 3D-IC Alliance
• EMC3D
• RTI “TechVenture” Forum
• SEMATECH
• IMEC
• Amkor Technology
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