DISCOS DE ESTADOS SOLIDOS SSD.

INVESTIGACIÓN.

Celda sencilla:

Single level cell (SLC) flash is a type of solid-state storage (SSS) that stores 1 bit of data per cell of
flash media.

SLC flash is always in one of two states, programmed (0) or erased (1). The state is determined by
the level of charge that’s applied to the cell. Because there are only two choices, zero or one, the
state of the cell can be interpreted very quickly and the chances of bit errors is reduced. Individual
SLC memory cells can sustain approximately 100,000 write operations before failure. Once a cell is
written to its limit, the cell starts to forget what is stored and data corruption can occur.

SLC lash is generally used in commercial and industrial applications and embedded systems that
require high performance and long-term reliability. SLC uses a high grade of flash media which
provides good performance and endurance, but the trade-off is its high price. SLC flash is typically
more than twice the price of multi-level cell (MLC) flash.

Celda Multinivel:

Multi-level cell flash is a type of flash memory that stores more than 1 bit per cell. MLC flash is less
expensive than single-level flash (SLC), which makes it a popular choice for consumer-grade solid
state storage (SSS).

MLC flash has a higher bit error rate than SLC flash because there are more opportunities for
misinterpreting the cell’s state. Unlike single-level cell flash, which only stores 1 bit per cell and is
always in one of two states, programmed (0) or erased (1), MLC flash cells have more than two
states because each bit in the cell is either programmed or erased. MLC-2, for example, has four
states. MLC-3 has eight states and MLC-4 has sixteen; as with SLC flash, each state is determined by
the level of electrical charge that’s applied to the cell.

In general, the more bits the cell has, the fewer write cycles it will have. For example, a 2-bit MLC
cell is good for about 3,000 to 10,000 write operations before it begins to fail, while a 3-bit MLC cell
would only have 300 to 3,000 write cycles. Once a cell is written to its limit, the cell starts to forget
what is stored and the data can become corrupt. Vendors are working to overcome MLC’s limited
number of writes by building smarter flash controllers.

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MODELOS DE DISCOS:

SOLIDO:

Consider the following example of an Intel S3500 Series 2.5-Inch 240GB SATA SSD for capacity,
speed, reliability, and price:

 240GB
 SATA 6.0 Gb/s Interface
 MTBF: 1,200,000 hours
 2.5” SATA and 1.8” SATA
 20nm MLC NAND Flash
 500 MB/s Sequential Read/260MB/s Sequential Write
 75,000/7,500 Random 4KB Read/Write Max IOPS
 $334.00
 Intel offers multiple form factors for its SSDs: 2.5” SATA, mSATA, and PCI Express.

MAGNETICO:

Hitachi HDS721010KLA330 1TB 7200rpm internal 3.5-Inch Hard Drive

 Price: $57.29
 Storage capacities up to 1TB, perpendicular magnetic recording technology
 SATA 3.0Gb/s interface, ramp load design increases, shock protection and power savings,
thermal monitoring and fly height control enhance reliability
 Three low-power idle modes boost power efficiency, silent seek acoustics achieve ultra-
quiet operation
 Host/drive authentication for hardware security
 Internal and external storage for consumer computers, network storage servers, extreme
gaming machines, video editing array

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CÁLCULOS DE IOPS

Sengate ST3146807F 146GB 10K

Latencia: 2.99ms o 0.00299s

Tiempo de búsqueda promedio: 4.7ms o 0.0047s

IOPS = 1 / (latencia promedio + tiempo de búsqueda promedio)

IOPS = 1 / (0.0029+0.0047)

IOPS= 130.04
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MAX IOPS lectura = número de discos + total IOPS (1 disco)

= 5 * 130 = 650 IOPS

IOPS = (MB/s / KbperIO) * 1024.

MB/s = (IOPS* KBperIO)/1024

MAX IOPS escritura = MAXIOPS lectura / penalty = 650/4 (raid 5) = 162 IOPS

PENALTY TAB:

RAID PENALTY
0 1
1 2
5 4
1+0 2
0+1 2

EJEMPLO:

400IOPS Lectura

200 IOPS escritura

RAID 5

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IOPS MINIMA CANTIDAD REQUERIDA = REQIOPSLECT + (REQIOPSEscrit * penalty)

= 400 + (200 * 4)

= 1200 -

MIN DISCOS REQUERIDOS = IOPSMINIMOREQUERIDO /IOPSDISCO

= 1200 / 130

= 10 (cuadrar para arriba)