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a1 S parameter ?
a2
Two Port
Zo1 Zo2
Network
b1 b2
0 0 - l2
- l1
b1 S11 S12 a1
b2 S 21 S 22 a 2
Problem 4
If you know the T-parameters of the device, please express T parameters as a function of known S parameters based
on the definition. Please show every step you did to get this solution.
Problem 5
The matching circuit is operating at 5 GHz. Design T matching network between Zs and ZL to maximize the signal
power transfer between those two impedance. The characteristic impedance of the system is 50 ohm. Please answer
the following questions.
L1 L2
C1
Zs Zs=30+j40 ohm ZL=30+j30 ohm ZL
Please find the value of each inductors and capacitor in the matching circuit using ZY Smith chart.
Use the constant conductance circle of g=0.2 for impedance transform to get unique impedance matching network.
The procedure need to be shown in the ZY Smith chart.
Problem 6
Design a matching circuit at f = 6GHz for maximum signal transfer. For the impedance matching circuit at the input,
please answer the following questions. The characteristic impedance of the system is 50 ohm. The signal source
input impedance is 10+j20 ohm and the input impedance is 25+j25 ohm.
10+j20 ohm d1
50 Ohm
50 Ohm
50 Ohm
d2
50 Ohm
50 Ohm
Short Stub
Z in 25 j 25 ohm
Please find the line length of d1 and d2 using open stub and transmission line for maximum power transfer.
The procedure need to be shown in the ZY Smith chart.
Problem 7
The S parameters of a GaAs FET measured in 50 ohm system at 800 MHz are S11=0.65<-95, S12=0.035<40,
S21=5<115, and S22=0.8<-35. Please answer the following questions.
a) Determine the stability
b) Draw the output stability circle at 800 MHz using Smith Chart.
c) Define the unstable region for the output matching impedance using output stability circle