MOSFET Problems

1) The illustrative N-channel enhancement

MOSFET model described before is biased as shown
in the accompanying figure. Use the level 1 model to
determine the drain voltage analytically, and compare
this calculation with a PSpice analysis.
PSpice computation gives:
ID = 0.954 ma
VGS = 3.92 volt
VDS = 8.28 volt

voltage divider gives gate bias as 3.92 volt.

ID ≈ 1E-4*(4-1)*(4-1) = 0.9 ma
VDS ≈ 12 - 0.9*3.9 = 8.49 volt
Note: An approximate channel length modulation correction would increase the current by about 1E-4
*0.01*8.49 = 8 µamp and lower the drain voltage by about 0.33 volt

2) The illustrative N-channel enhancement

MOSFET model described before is biased as shown
in the accompanying figure. Use the level 1 model to
determine the drain voltage analytically, and compare
this calculation with a PSpice analysis.PSpice gives
VDS = VGS = 5.057 volts
ID = 1.78 ma

Analytically
ID = (VDD - VDS)/RD
ID = K(VGS-VT)(VGS-VT)
VGS = VDS

Solve for VDS = 5.18 volts

3) The illustrative N-channel enhancement

MOSFET model described before is biased as shown
in the accompanying figure. Use the level 1 model to
determine the drain voltage analytically, and compare
this calculation with a PSpice analysis

PSpice gives VDS = 2VGS = 7.97 volts

ID = 0.993 ma

Analytically
ID = (VDD - VDS)/RD
ID = K(VGS-VT)(VGs-VT)
2VGS = VDS

Solve for VDS = 8.22 volts

ID = 0.968 ma

Introductory Electronics Notes 63-1 Copyright © M H Miller: 2000

The University of Michigan-Dearborn revised
4) The illustrative P-channel enhancement
MOSFET model described before is biased as shown
in the accompanying figure. Use the level 1 model to
determine the drain voltage analytically, and compare
this calculation with a PSpice analysis

PSpice gives VD = 3.7 volts ID = K(VGS-VT)(VGS-VT)

ID = 0.954 ma Solve for VD = 3.33 volts
ID = 0.85 ma
Analytically Note: Including the channel length modulation effect
VGS = 12(33/(33+68) = 3.92volts raises the estimated current to 0.91 ma.

5) Compute the transfer characteristic

Vout/Vin for the amplifier shown. Note (on the
characteristic) where cutoff occurs. Recall that
saturation requires Vin ≤ VDS + VT and note where
operation changes from saturation into the voltage-
controlled-resistance region.
MOS Prob #5
VIN 1 0 DC 0
RIN 1 2 100K
MNE 3 2 00 MHMN
RD 4 3 3.9K
VDD 4 0 DC 12
.model mhmN nmos vto=1 l=10u w = 20u
+kp=1e-4 gamma=0.5 phi=0.7 lambda=.01
+rd=10 rs=10 rsh=10 cbd=5p cbs=1p
+mj=.5 mjsw=.25 pb=.6 is=1e-16
+cgdo=4e-11 cgso=4e-11 cgbo=2e-10
+tox=0.1u ld=0.2u
.DC VIN 0 12 .1
.PROBE
.OP
.END

Introductory Electronics Notes 63-2 Copyright © M H Miller: 2000

The University of Michigan-Dearborn revised
Note that the idealized transfer characteristic 'starts' when VIN = 1 volt; before that the MOSFET is cutoff
and the drain voltage is 12 volts. The MOSFET is not in saturated operation when VIN ≥ VD +1, i.e.,
the gate-drain voltage exceeds the threshold voltage VT. The drain current then becomes roughly constant
because although increasing VIN tended to increase the current the increased current lowers the drain
source voltage which in the VCR tends to reduce the current

6) The high incremental resistance of a

saturated N-channel depletion-type MOSFET is used
as a drain load, replacing the resistor in the preceding
circuit. Note that this device is ON with VGS = 0.
Compute the transfer characteristic Vout/Vin for the
amplifier shown. Note (on the characteristic) where
cutoff occurs. Recall that saturation requires Vin ≤
VDS + VT and note where operation changes from
saturation into the voltage-controlled-resistance
region.

*nmos enhancement
.model mhmN nmos vto=1 l=10u w = 20u
+kp=1e-4 gamma=0.5 phi=0.7 lambda=.01
+rd=10 rs=10 rsh=10 cbd=5p cbs=1p
+mj=.5 mjsw=.25 pb=.6 is=1e-16
+cgdo=4e-11 cgso=4e-11 cgbo=2e-10
+tox=0.1u ld=0.2u

*nmos depletion
.model ND nmos vto=-5 l=10u w = 40u
+kp=1e-4 gamma=0.5 phi=0.7 lambda=.01
+rd=10 rs=10 rsh=10 cbd=5p cbs=1p
+mj=.5 mjsw=.25 pb=.6 is=1e-16
Depletion load +cgdo=4e-11 cgso=4e-11 cgbo=2e-10
+tox=0.1u ld=0.2u
VIN 1 0 DC 0
RIN 1 2 100K .DC VIN 0 12 .1
MNE 3 2 00 mhmN .PROBE
MND 4 3 33 ND .OP
VDD 4 0 DC 12 .END

Introductory Electronics Notes 63-3 Copyright © M H Miller: 2000

The University of Michigan-Dearborn revised
Assume the depletion load operates in the VCR region and the enhancement device is saturated. Then
ID = 0.1(VIN - 1)2 (enhancement)
ID = 0.2[(12-V(3)) - (12-V(3))2] (depletion load)
Equate and solve for V(3) = 7 ± SQRT( 25 - (VIN-1)2/2); this is plotted on PROBE drawings. (Note: Use
'-' sign for the physically meaningful solution.)

Eventually the load saturates and the drain current is essentially fixed at 0.2(-5)2=5ma; this estimate
neglects the channel length modulation effect. Concomitantly the driver operates in the VCR region; i.e.,
5 = .1{2(VIN-1)V(3) - V(3)2]
Solve for V(3) = VIN-1 ± SQRT((VIN-1)2 -50) and plot on PROBE data above.. Note: Use the '-' sign
for the physically meaningful solution.

The drain current is plotted below, along with the estimated currents.

7) A Complementary MOS amplifier uses a P-

channel enhancement load for an N-channel
enhancement amplifier, as shown. Plot the ‘load
line’ on the N-channel drain characteristics (compute
the load line and transfer the data) and determine the
ID vs Vin transfer characteristic. Compare this with
the computed characteristic. Note that the load
always operated in saturation since VDS = VGS.

Enhancement load

VIN 1 0 DC 0
RIN 1 2 100K
MNE 3 2 00 mhmN
MPE 4 2 34 PE
VDD 4 0 DC 12

Introductory Electronics Notes 63-4 Copyright © M H Miller: 2000

The University of Michigan-Dearborn revised
 *pmos enhancement
*nmos enhancement .model PE pmos vto=-1 l=10u w = 20u
.model mhmN nmos vto=1 l=10u w = 20u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01
+kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p
+rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16
+mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10
+cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u
+tox=0.1u ld=0.2u
.DC VIN 0 12 .1
.PROBE
.OP
.END
Initially (VIN < 1v) MNE is cutoff; the channel is not formed. As the voltage increases above VT MNE
starts VCR operation, while MPE is saturated. As VIN increases MNE saturates, and after a further
increase MPE begins VCR operation. When both devices are saturated
ID = 0.1(VIN-1)2 = 0.1(VIN-12+1)2.
From this equality determine VIN = 6 when both devices are saturated.

Introductory Electronics Notes 63-5 Copyright © M H Miller: 2000

The University of Michigan-Dearborn revised